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Himanshu Pandey

Himanshu Pandey contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2026arXiv

An adaptive wavelet-based PINN for problems with localized high-magnitude source

In recent years, physics-informed neural networks (PINNs) have gained significant attention for solving differential equations, although they suffer from two fundamental limitations, namely, spectral bias inherent in neural networks and loss imbalance arising from multiscale phenomena. This paper proposes an adaptive wavelet-based PINN (AW-PINN) to address the extreme loss imbalance characteristic of problems with localized high-magnitude source terms. Such problems frequently arise in various physical applications, such as thermal processing, electro-magnetics, impact mechanics, and fluid dynamics involving localized forcing. The proposed framework dynamically adjusts the wavelet basis function based on residual and supervised loss. This adaptive nature makes AW-PINN handle problems with high-scale features effectively without being memory-intensive. Additionally, AW-PINN does not rely on automatic differentiation to obtain derivatives involved in the loss function, which accelerates the training process. The method operates in two stages, an initial short pre-training phase with fixed bases to select physically relevant wavelet families, followed by an adaptive refinement that adapts scales and translations without populating high-resolution bases across entire domains. Theoretically, we show that under certain assumptions, AW-PINN admits a Gaussian process limit and derive its associated NTK structure. We evaluate AW-PINN on several challenging PDEs featuring localized high-magnitude source terms with extreme loss imbalances having ratios up to $10^{10}:1$. Across these PDEs, including transient heat conduction, highly localized Poisson problems, oscillatory flow equations, and Maxwell equations with a point charge source, AW-PINN consistently outperforms existing methods in its class.

preprint2013arXiv

Effect of Thermal Annealing on Boron Diffusion, Micro-structural, Electrical and Magnetic properties of Laser Ablated CoFeB Thin Films

We report on Boron diffusion and subsequent crystallization of Co$_{40}$Fe$_{40}$B$_{20}$ (CoFeB) thin films on SiO$_2$/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the interface in both amorphous and crystalline phase of CoFeB. High-resolution transmission electron microscopy reveals a small fraction of nano-crystallites embedded in the amorphous matrix of CoFeB. However, annealing at 400$^\circ$C results in crystallization of CoFe with \textit{bcc} structure along (110) orientation. As-deposited films are non-metallic in nature with the coercivity (H$_c$) of 5Oe while the films annealed at 400$^\circ$C are metallic with a H$_c$ of 135Oe.

preprint2013arXiv

Evolution of ferromagnetic and spin-wave resonances with crystalline order in thin films of full-Heusler alloy Co2MnSi

We report the evolution of magnetic moment as well as magnetic anisotropy with crystalline order in Co$_2$MnSi thin films grown on $(100)$ MgO by pulsed laser deposition. The films become more ordered as the annealing temperature ($T_A$) increases from 400 to 600 $^0$C. The extent of \emph{L}$2_1$ ordering in the films annealed at 600 $^0$C is $\approx 96%$. The static magnetization measurements by vibrating sample magnetometry shows a maximum moment of 4.95 $μ_B$ per formula unit with low coercivity ($H_C$ $\approx$ 65 Oe) in the films annealed at 600 $^0$C. A rigorous analysis of the azimuthal and polar angle dependent ferromagnetic resonance (FMR) measured at several temperatures allows determination of various anisotropy fields relevant to our system as a function of $T_A$. Finally, we have evaluated the exchange stiffness constant down to 100 K using spin wave modes in FMR spectra. We have also estimated the exchange energies as well as stiffness constant by varying the lattice parameter \emph{ab-initio} using the Korringa-Kohn-Rostoker method.

preprint2013arXiv

Magnetoelastic coupling induced magnetic anisotropy in Co$_2$(Fe/Mn)Si thin films

The influence of epitaxial strain on uniaxial magnetic anisotropy of Co$_{2}$FeSi (CFS) and Co$_{2}$MnSi (CMS) Heusler alloy thin films grown on (001) SrTiO$_3$ (STO) and MgO is reported. The in-plane biaxial strain is susceptible to tune by varying the thickness of the films on STO, while on MgO the films show in-plane easy axis for magnetization (\overrightarrow{M}) irrespective of their thickness. A variational analysis of magnetic free energy functional within the Stoner-Wohlfarth coherent rotation model with out-of-plane uniaxial anisotropy for the films on STO showed the presence of magnetoelastic anisotropy with magnetostriction constant $\approx$ (12.22$\pm$0.07)$\times 10^{-6}$ and (2.02$\pm$0.06)$\times 10^{-6}$, in addition to intrinsic magnetocrystalline anisotropy $\approx$ -1.72$\times 10^{6}$ erg/cm$^{3}$ and -3.94$\times 10^{6}$ erg/cm$^{3}$ for CFS and CMS, respectively. The single-domain phase diagram reveals a gradual transition from in-plane to out-of-plane orientation of magnetization with the decreasing film thickness. A maximum canting angle of 41.5$^{\circ}$ with respect to film plane is predicted for the magnetization of the thinnest (12 nm) CFS film on STO. The distinct behaviour of \overrightarrow{M} in the films with lower thickness on STO is attributed to strain-induced tetragonal distortion.

preprint2013arXiv

Structural ordering driven anisotropic magnetoresistance, anomalous Hall resistance and its topological overtones in full-Heusler Co2MnSi thin films

We report the evolution of crystallographic structure, magnetic ordering and electronic transport in thin films of full-Heusler alloy Co$_2$MnSi deposited on (001) MgO with annealing temperatures ($T_A$). By increasing the $T_A$ from 300$^\circ$C to 600$^\circ$C, the film goes from a disordered nanocrystalline phase to $B2$ ordered and finally to the $L2_1$ ordered alloy. The saturation magnetic moment improves with structural ordering and approaches the Slater-Pauling value of $\approx 5.0 μ_B$ per formula unit for $T_A$ = 600$^\circ$C. At this stage the films are soft magnets with coercive and saturation fields as low as $\approx$ 7 mT and 350 mT, respectively. Remarkable effects of improved structural order are also seen in longitudinal resistivity ($ρ_{xx}$) and residual resistivity ratio. A model based upon electronic transparency of grain boundaries illucidates the transition from a state of negative $dρ/dT$ to positive $dρ/dT$ with improved structural order. The Hall resistivity ($ρ_{xy}$) derives contribution from the normal scattering of charge carriers in external magnetic field, the anomalous effect originating from built-in magnetization and a small but distinct topological Hall effect in the disordered phase. The carrier concentration ($n$) and mobility ($μ$) have been extracted from the high field $ρ_{xy}$ data. The highly ordered films are characterized by $n$ and $μ$ of 1.19$\times$ 10$^{29}$ m$^{-3}$ and 0.4 cm$^2V^{-1}s^{-1}$ at room temperature. The dependence of $ρ_{xy}$ on $ρ_{xx}$ indicates the dominance of skew scattering in our films, which shows a monotonic drop on raising the $T_A$. The topological Hall effect is analyzed for the films annealed at 300$^\circ$C. ......

preprint2013arXiv

Two-dimensional electron-gas-like charge transport at magnetic Heusler alloy-SrTiO$_3$ interface

We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and Co$_2$FeSi grown on (001) SrTiO$_3$. This unusual behavior is not observed in films deposited on other cubic oxide substrates of comparable lattice parameters. The scaling of the resistivity with thickness of the films allow extraction of interface conductance, which can be attributed to a layer of oxygen vacancies confined within 1.9 nm of the interface as revealed by atomically resolved electron microscopy and spectroscopy. The high mobility transport observed here at the interface of a fully spin polarized metal is potentially important for spintronics applications.