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Hilbert v. Loehneysen

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Published work

3 published item(s)

preprint2012arXiv

Light-matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness.

preprint2008arXiv

Large anisotropic uniaxial pressure dependencies of Tc in single crystalline Ba(Fe0.92Co0.08)2As2

Using high-resolution dilatometry, we study the thermodynamic response of the lattice parameters to superconducting order in a self-flux grown Ba(Fe0.92Co0.08)2As2 single crystal. The uniaxial pressure dependencies of the critical temperature of Tc, calculated using our thermal expansion and specific heat data via the Ehrenfest relation, are found to be quite large and very anisotropic (dTc/dpa = 3.1(1) K/GPa and dTc/dpc = - 7.0(2) K/GPa). Our results show that there is a strong coupling of the c/a ratio to superconducting order, which demonstrates that Tc is far from the optimal value. A surprising similarity with the uniaxial pressure effects in several other layered superconductors is discussed.

preprint1999arXiv

Investigation of Single Boron Acceptors at the Cleaved Si:B (111) Surface

The cleaved and (2 x 1) reconstructed (111) surface of p-type Si is investigated by scanning tunneling microscopy (STM). Single B acceptors are identified due to their characteristic voltage-dependent contrast which is explained by a local energetic shift of the electronic density of states caused by the Coulomb potential of the negatively charged acceptor. In addition, detailed analysis of the STM images shows that apparently one orbital is missing at the B site at sample voltages of 0.4 - 0.6 V, corresponding to the absence of a localized dangling-bond state. Scanning tunneling spectroscopy confirms a strongly altered density of states at the B atom due to the different electronic structure of B compared to Si.