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Christoph Suergers

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cond-mat.mes-hall cond-mat.supr-con cond-mat.mtrl-sci

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preprint2010arXiv

Nonlocal vs local vortex dynamics in the transversal flux transformer effect

In this follow-up to our recent Letter [F. Otto et al., Phys. Rev. Lett. 104, 027005 (2010)], we present a more detailed account of the superconducting transversal flux transformer effect (TFTE) in amorphous (a-)NbGe nanostructures in the regime of strong nonequilibrium in local vortex motion. Emphasis is put on the relation between the TFTE and local vortex dynamics, as the former turns out to be a reliable tool for determining the microscopic mechanisms behind the latter. By this method, a progression from electron heating at low temperatures T to the Larkin-Ovchinnikov effect close to the transition temperature Tc is traced over a range 0.26 < T/Tc < 0.95. This is represented by a number of relevant parameters such as the vortex transport entropy related to the Nernst-like effect at low T, and a nonequilibrium magnetization enhancement close to Tc. At intermediate T, the Larkin-Ovchinnikov effect is at high currents modified by electron heating, which is clearly observed only in the TFTE.

preprint2009arXiv

Reversal of Nonlocal Vortex Motion in the Regime of Strong Nonequilibrium

We investigate nonlocal vortex motion in weakly pinning a-NbGe nanostructures, which is driven by a transport current I and remotely detected as a nonlocal voltage Vnl. At high I, the measured Vnl exhibits dramatic sign reversals that at low and high temperatures T occur for opposite polarities of I. The sign of Vnl becomes independent of that of the drive current at large abs(I). These unusual effects can be nearly quantitatively explained by a novel enhancement of magnetization, arising from a nonequilibrium distribution of quasiparticles at high T, and a Nernst-like effect resulting from local electron heating at low T.

preprint1999arXiv

Investigation of Single Boron Acceptors at the Cleaved Si:B (111) Surface

The cleaved and (2 x 1) reconstructed (111) surface of p-type Si is investigated by scanning tunneling microscopy (STM). Single B acceptors are identified due to their characteristic voltage-dependent contrast which is explained by a local energetic shift of the electronic density of states caused by the Coulomb potential of the negatively charged acceptor. In addition, detailed analysis of the STM images shows that apparently one orbital is missing at the B site at sample voltages of 0.4 - 0.6 V, corresponding to the absence of a localized dangling-bond state. Scanning tunneling spectroscopy confirms a strongly altered density of states at the B atom due to the different electronic structure of B compared to Si.