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Hideaki Iwasawa

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2 publications

preprint2021arXiv

Emergence of low-energy electronic states in oxygen-controlled Mott insulator Ca2_{2}RuO4+δ_{4+δ}

Insulator-to-metal transition in Ca2_{2}RuO4_{4} has drawn keen attention because of its sensitivity to various stimulation and its potential controllability. Here, we report a direct observation of Fermi surface, which emerges upon introducing excess oxygen into an insulating Ca2_{2}RuO4_{4}, by using angle-resolved photoemission spectroscopy. Comparison between energy distribution curves shows that the Mott insulating gap is closed by eV-scale spectral-weight transfer with excess oxygen. Momentum-space mapping exhibits two square-shaped sheets of the Fermi surface. One is a hole-like αα sheet around the corner of a tetragonal Brillouin zone, and the other is an electron-like ββ sheet around the ΓΓ point. The electron occupancies of the αα and ββ bands are determined to be nα=1.6n_α=1.6 and nβ=0.6n_β=0.6, respectively. Our result indicates that the insulator-to-metal transition occurs selectively in dxzd_{xz} and dyzd_{yz} bands and not yet in dxyd_{xy} band. This orbital selectivity is most likely explained in terms of the energy level of dxyd_{xy}, which is deeper for Ca2_{2}RuO4+δ_{4+δ} than for Ca1.8_{1.8}Sr0.2_{0.2}RuO4_{4}. Consequently, we found substantial differences from the Fermi surface of other ruthenates, shedding light on a unique role of excess oxygen among the metallization methods of Ca2_{2}RuO4_{4}.

preprint2015arXiv

Monolayer charge-neutral graphene on platinum with extremely weak electron-phonon coupling

Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band structure, large doping and strong electron-phonon coupling. Here we report the growth of monolayer graphene with high crystalline quality on Pt(111) substrate by using a very low concentration of an internal carbon source with high annealing temperature. The controlled growth leads to electronically decoupled graphene: it is nearly charge neutral and has extremely weak electron-phonon coupling (coupling strength λλ ≈\approx 0.056) as revealed by angle-resolved photoemission spectroscopic measurements. The thermodynamics and kinetics of the carbon diffusion process is investigated by DFT calculation. Such graphene with negligible graphene-substrate interaction provides an important platform for fundamental research as well as device applications when combined with a nondestructive sample transfer technique.

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