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Hermann Kohlstedt

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Published work

5 published item(s)

preprint2022arXiv

Matter & Mind Matter

As a result of a hundred million years of evolution, living animals have adapted extremely well to their ecological niche. Such adaptation implies species-specific interactions with their immediate environment by processing sensory cues and responding with appropriate behavior. Understanding how living creatures perform pattern recognition and cognitive tasks is of particular importance for computing architectures: by studying these information pathways refined over eons of evolution, researchers may be able to streamline the process of developing more highly advanced, energy efficient autonomous systems. With the advent of novel electronic and ionic components along with a deeper understanding of information pathways in living species, a plethora of opportunities to develop completely novel information processing avenues are within reach. Here, we describe the basal information pathways in nervous systems, from the local neuron level to the entire nervous system network. The dual importance of local learning rules is addressed, from spike timing dependent plasticity at the neuron level to the interwoven morphological and dynamical mechanisms of the global network. Basal biological principles are highlighted, including phylogenies, ontogenesis, and homeostasis, with particular emphasis on network topology and dynamics. While in machine learning system training is performed on virgin networks without any a priori knowledge, the approach proposed here distinguishes itself unambiguously by employing growth mechanisms as a guideline to design novel computing architectures. Including fundamental biological information pathways that explore the spatiotemporal fundamentals of nervous systems has untapped potential for the development of entirely novel information processing systems. Finally, a benchmark for neuromorphic systems is suggested.

preprint2022arXiv

Ultrathin AlScN for low-voltage driven ferroelectric-based devices

Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultrathin (10 nm) Al0.72Sc0.28N films that are ferroelectrically switchable at room temperature. All-epitaxial Al0.72Sc0.28N/Pt heterostructures are grown by magnetron sputtering onto GaN/sapphire substrates followed by an in situ Pt capping approach to avoid oxidation of the Al0.72Sc0.28N film surface. Structural characterization by X-ray diffraction and transmission electron microscopy reveals the established epitaxy. The thus obtained high-quality interfaces in combination with the in situ capping is expected to facilitate ferroelectric switching of AlScN in the ultrathin regime. The analysis of the relative permittivity and coercive field dependence on the Al0.72Sc0.28N film thicknesses in the range of 100 nm down to 10 nm indicates only moderate scaling effects, suggesting that the critical thickness for ferroelectricity is not yet approached. Furthermore, the deposited layer stack demonstrates the possibility of including ultrathin ferroelectric AlScN into all-epitaxial GaN-based devices using sputter deposition techniques. Thus, our work highlights the integration and scaling potential of all-epitaxial ultrathin AlScN offering high storage density paired with low voltage operation desired for state of the art ferroelectric memory devices.

preprint2021arXiv

Stochastic behaviour of an interface-based memristive device

A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible for the actual switching dynamics or on multi-physical spatially resolved approaches that include the inherent stochastic behaviour of real-world memristive devices but are computationally very expensive. In contrast to the available models, we present a computationally inexpensive and robust spatially 1D model for simulating interface-type memristive devices. The model efficiently incorporates the stochastic behaviour observed in experiments and can be easily transferred to circuit simulation frameworks. The ion transport, responsible for the resistive switching behaviour, is modelled using the kinetic Cloud-In-a-Cell scheme. The calculated current-voltage characteristics obtained using the proposed model show excellent agreement with the experimental findings.

preprint2016arXiv

The role of ion transport phenomena in memristive double barrier devices

In this work we report on the role of ion transport for the dynamic behavior of a double barrier quantum mechanical Al/Al$_2$O$_3$/Nb$_{\text{x}}$O$_{\text{y}}$/Au memristive device based on numerical simulations in conjunction with experimental measurements. The device consists of an ultra-thin Nb$_{\text{x}}$O$_{\text{y}}$ solid state electrolyte between an Al$_2$O$_3$ tunnel barrier and a semiconductor metal interface at an Au electrode. It is shown that the device provides a number of interesting features for potential applications such as an intrinsic current compliance, a relatively long retention time, and no need for an initialization step. Therefore, it is particularly attractive for applications in highly dense random access memories or neuromorphic mixed signal circuits. However, the underlying physical mechanisms of the resistive switching are still not completely understood yet. To investigate the interplay between the current transport mechanisms and the inner atomistic device structure a lumped element circuit model is consistently coupled with 3D kinetic Monte Carlo model for the ion transport. The simulation results indicate that the drift of charged point defects within the Nb$_{\text{x}}$O$_{\text{y}}$ is the key factor for the resistive switching behavior. It is shown in detail that the diffusion of oxygen modifies the local electronic interface states resulting in a change of the interface properties of the double barrier device.

preprint2011arXiv

Pt/Ti/Al2O3/Al tunnel junctions showing electroforming-free bipolar resistive switching behavior

We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching successfully lead to various resistance values in its low resistance state, suggesting the possibility for multi-level-operation. A mechanism for the bipolar switching is qualitatively discussed in terms of the modulation of the tunnel barrier by the reactive Ti layer on top of the barrier.