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Researcher profile

Hengxin Tan

Hengxin Tan contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

5 published item(s)

preprint2022arXiv

Charge density wave order in kagome metal AV$_3$Sb$_5$ (A= Cs, Rb, K)

We employ polarization-resolved electronic Raman spectroscopy and density functional theory to study the primary and secondary order parameters, as well as their interplay, in the charge density wave (CDW) state of the kagome metal AV3Sb5. Previous x-ray diffraction data at 15K established that the CDW order in CsV3Sb5 comprises of a 2x2x4 structure: one layer of inverse-star-of-David and three consecutive layers of star-of-David pattern. We analyze the lattice distortions based the 2x2x4 structure at 15K, and find that U lattice distortion is the primary order parameter while M and L distortions are secondary order parameters for Vanadium displacements. This conclusion is confirmed by the calculation of bare susceptibility that shows a broad peak at around qz=0.25 along the hexagonal Brillouin zone face central line (U-line). We also identify several phonon modes emerging in the CDW state, which are lattice vibration modes related to V and Sb atoms as well as alkali atoms. The detailed temperature evolution of these modes' frequencies, HWHM, and integrated intensities support a phase diagram with two successive structural phase transitions in CsV3Sb5: the first one with a primary order parameter appearing at TS=94K and the second isostructural one appearing at around 70K.

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preprint2022arXiv

Facet dependent surface energy gap on magnetic topological insulators

Magnetic topological insulators (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ ($n=0,1,2,3$) are promising to realize exotic topological states such as the quantum anomalous Hall effect (QAHE) and axion insulator (AI), where the Bi$_2$Te$_3$ layer introduces versatility to engineer electronic and magnetic properties. However, whether surface states on the Bi$_2$Te$_3$ terminated facet are gapless or gapped is debated, and its consequences in thin-film properties are rarely discussed. In this work, we find that the Bi$_2$Te$_3$ terminated facets are gapless for $n \ge 1$ compounds by calculations. Despite that the surface Bi$_2$Te$_3$ (one layer or more) and underlying MnBi$_2$Te$_4$ layers hybridize and give rise to a gap, such a hybridization gap overlaps with bulk valence bands, leading to a gapless surface after all. Such a metallic surface poses a fundamental challenge to realize QAHE or AI, which requires an insulating gap in thin films with at least one Bi$_2$Te$_3$ surface. In theory, the insulating phase can still be realized in a film if both surfaces are MnBi$_2$Te$_4$ layers. Otherwise, it requires that the film thickness is less than 10$\sim$20 nm to push down bulk valence bands via the size effect. Our work paves the way to understand surface states and design bulk-insulating quantum devices in magnetic topological materials.

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preprint2022arXiv

Observation of anomalous amplitude modes in the kagome metal CsV$_3$Sb$_5$

The charge-density wave (CDW) phase is often accompanied by the condensation of a soft acoustic phonon mode, giving rise to lattice distortion and charge density modulation. This picture was challenged for the recently discovered kagome metal CsV$_3$Sb$_5$, based on the evidence of absence of soft phonons. Here we report the observation of Raman-active CDW amplitude modes in this material, which are collective excitations typically thought to emerge out of frozen soft phonons. The amplitude modes strongly hybridize with other superlattice modes, imparting them with clear temperature-dependent frequency shift and broadening, rarely seen in other known CDW materials. Both the mode mixing and the large amplitude mode frequencies suggest that the CDW exhibits the character of strong electron-phonon coupling, a regime in which acoustic phonon softening can cease to exist. The observation of amplitude modes in the absence of soft phonons highlights the unconventional nature of the CDW in CsV$_3$Sb$_5$.

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preprint2021arXiv

Anomalous Hall effect in weak-itinerant ferrimagnet FeCr$_2$Te$_4$

We carried out a comprehensive study of electronic transport, thermal and thermodynamic properties in FeCr$_2$Te$_4$ single crystals. It exhibits bad-metallic behavior and anomalous Hall effect (AHE) below a weak-itinerant paramagentic-to-ferrimagnetic transition $T_c$ $\sim$ 123 K. The linear scaling between the anomalous Hall resistivity $ρ_{xy}$ and the longitudinal resistivity $ρ_{xx}$ implies that the AHE in FeCr$_2$Te$_4$ is most likely dominated by extrinsic skew-scattering mechanism rather than intrinsic KL or extrinsic side-jump mechanism, which is supported by our Berry phase calculations.

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preprint2019arXiv

Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films

Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled doping to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.

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