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Heinrich Kurz

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cond-mat.mes-hall cond-mat.mtrl-sci physics.optics

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preprint2015arXiv

Experimental verification of electro-refractive phase modulation in graphene

Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change in effective refractive index, insertion loss and absorption change are extracted. These experimentally obtained values are well reproduced by simulations and design guidelines are provided to make graphene devices competitive to contemporary silicon based phase modulators for on-chip applications.

preprint2011arXiv

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the operation of bilayer graphene based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low temperature measurements indicate, that the increased on/off ratio is caused by the opening of a mobility gap. Beside field effect transistors the presented approach can also be employed for other bilayer graphene based devices like photodetectors for THz to infrared radiation, chemical sensors and in more sophisticated structures such as antidot- or superlattices where an artificial potential landscape has to be created.

preprint2010arXiv

Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.