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Héctor Ochoa

Héctor Ochoa contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2021arXiv

Degradation of phonons in disordered moiré superlattices

The elastic collective modes of a moiré superlattice arise not from vibrations of a rigid crystal but from the relative displacement between the constituent layers. Despite their similarity to acoustic phonons, these modes, called phasons, are not protected by any conservation law. Here, we show that disorder in the relative orientation between the layers and thermal fluctuations associated with their sliding motion degrade the propagation of sound in the moiré superlattice. Specifically, the phason modes become overdamped at low energies and acquire a finite gap, which displays a universal dependence on the twist-angle variance. Thus, twist-angle inhomogeneity is manifested not only in the non-interacting electronic structure of moiré systems, but also in their phonon-like modes. More broadly, our results have important implications for the electronic properties of twisted moiré systems that are sensitive to the electron-phonon coupling.

preprint2020arXiv

Universal moiré nematic phase in twisted graphitic systems

Graphene moiré superlattices display electronic flat bands. At integer fillings of these flat bands, energy gaps due to strong electron-electron interactions are generally observed. However, the presence of other correlation-driven phases in twisted graphitic systems at non-integer fillings is unclear. Here, we report scanning tunneling microscopy (STM) measurements that reveal the existence of threefold rotational (C3) symmetry breaking in twisted double bilayer graphene (tDBG). Using spectroscopic imaging over large and uniform areas to characterize the direction and degree of C3 symmetry breaking, we find it to be prominent only at energies corresponding to the flat bands and nearly absent in the remote bands. We demonstrate that the C3 symmetry breaking cannot be explained by heterostrain or the displacement field, and is instead a manifestation of an interaction-driven electronic nematic phase, which emerges even away from integer fillings. Comparing our experimental data with a combination of microscopic and phenomenological modeling, we show that the nematic instability is not associated with the local scale of the graphene lattice, but is an emergent phenomenon at the scale of the moiré lattice, pointing to the universal character of this ordered state in flat band moiré materials.

preprint2019arXiv

Tunable strain soliton networks confine electrons in Van der Waals materials

Sliding and twisting van der Waals layers with respect to each other gives rise to moiré structures with emergent electronic properties. Electrons in these moiré structures feel weak potentials that are typically in the tens of millielectronvolt range when the moiré structures are smooth at the atomic scale. Here we report a facile technique to achieve deep, deterministic trapping potentials via strain-based moiré engineering in van der Waals bilayers. We use elasto-scanning tunneling microscopy to show that uniaxial strain drives a commensurate-incommensurate lattice transition in a multilayer MoSe$_2$ system. In the incommensurate state, the top monolayer is partially detached from the bulk through the spontaneous formation of topological solitons where stress is relieved. Intersecting solitons form a honeycomb-like network resulting from the three-fold symmetry of the adhesion potential between layers. The vertices of the honeycomb network occur in bound pairs with different interlayer stacking arrangements. One vertex of the pair is found to be an efficient trap for electrons, displaying two states that are deeply confined within the semiconductor gap and have a spatial extent of 2 nm. Honeycomb soliton networks thus provide a unique path to engineer an array of identical deeply confined states with a strain-dependent tunable spatial separation, without the necessity of introducing chemical defects into the host materials.