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Hector Mera

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Published work

3 published item(s)

preprint2015arXiv

Hypergeometric resummation of self-consistent sunset diagrams for electron-boson quantum many-body systems out of equilibrium

A newly developed hypergeometric resummation technique [H. Mera et al., Phys. Rev. Lett. 115, 143001 (2015)] provides an easy-to-use recipe to obtain conserving approximations within the self-consistent nonequilibrium many-body perturbation theory. We demonstrate the usefulness of this technique by calculating the phonon-limited electronic current in a model of a single-molecule junction within the self-consistent Born approximation for the electron-phonon interacting system, where the perturbation expansion for the nonequilibrium Green function in powers of the free bosonic propagator typically consists of a series of non-crossing \sunset" diagrams. Hypergeometric resummation preserves conservation laws and it is shown to provide substantial convergence acceleration relative to more standard approaches to self-consistency. This result strongly suggests that the convergence of the self-consistent \sunset" series is limited by a branch-cut singularity, which is accurately described by Gauss hypergeometric functions. Our results showcase an alternative approach to conservation laws and self-consistency where expectation values obtained from conserving perturbation expansions are \summed" to their self-consistent value by analytic continuation functions able to mimic the convergence-limiting singularity structure.

preprint2014arXiv

Nonperturbative Quantum Physics from Low-Order Perturbation Theory

The Stark effect in hydrogen and the cubic anharmonic oscillator furnish examples of quantum systems where the perturbation results in a certain ionization probability by tunneling processes. Accordingly, the perturbed ground-state energy is shifted and broadened, thus acquiring an imaginary part which is considered to be a paradigm of nonperturbative behavior. Here we demonstrate how the low order coefficients of a divergent perturbation series can be used to obtain excellent approximations to both real and imaginary parts of the perturbed ground state eigenenergy. The key is to use analytic continuation functions with a built in analytic structure within the complex plane of the coupling constant, which is tailored by means of Bender-Wu dispersion relations. In the examples discussed the analytic continuation functions are Gauss hypergeometric functions, which take as input fourth order perturbation theory and return excellent approximations to the complex perturbed eigenvalue. These functions are Borel-consistent and dramatically outperform widely used Padé and Borel-Padé approaches, even for rather large values of the coupling constant.

preprint2010arXiv

Charged impurity scattering and mobility in gated silicon nanowires

We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is calculated with a tight-binding method and the transport properties with a Landauer-Buttiker Green functions approach and the linearized Boltzmann transport equation (LBTE) in the first Born approximation. Based on our numerical results we argue that: (1) There are large differences between Phosphorous (P) and Boron (B) doped systems, acceptors behaving as tunnel barriers for the electrons, while donors give rise to Fano resonances in the transmission. (2) As a consequence, the mobility is much larger in P- than in B-doped nanowires at low carrier density, but can be larger in B-doped nanowires at high carrier density. (3) The resistance of a single impurity is strongly dependent on its radial position in the nanowire, especially for acceptors. (4) As a result of subband structure and screening effects, the impurity-limited mobility can be larger in thin nanowires embedded in HfO2 than in bulk Si. Acceptors might, however, strongly hinder the flow of electrons in thin nanowires embedded in SiO2. (5) The perturbative LBTE largely fails to predict the correct mobilities in quantum-confined nanowires.