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Researcher profile

Christophe Delerue

Christophe Delerue contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.chem-phcond-mat.mes-hallphysics.comp-ph

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Published work

7 published item(s)

preprint2012arXiv

Adsorption behavior of conjugated {C}3-oligomers on Si(100) and HOPG surfaces

A pi-conjugated {C}3h-oligomer involving three dithienylethylene branches bridged at the meta positions of a central benzenic core has been synthesized and deposited either on the Si(100) surface or on the HOPG surface. On the silicon surface, scanning tunneling microscopy allows the observation of isolated molecules. Conversely, by substituting the thiophene rings of the oligomers with alkyl chains, a spontaneous ordered film is observed on the HOPG surface. As the interaction of the oligomers is different with both surfaces, the utility of the Si(100) surface to characterize individual oligomers prior to their use into a 2D layer is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surface

The adsorption of thienylenevinylene oligomers on the Si(100) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene are highly voltage dependent. We discuss the influence of the alkyl chains on the adsorption process and on the appearance of the molecules in the STM images.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Assessment of the notions of band offsets, wells and barriers at nanoscale semiconductor heterojunctions

Epitaxially-grown semiconductor heterostructures give the possibility to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the interfaces where there is a step (discontinuity) which only depends on the composition of the semiconductors in contact. In this paper, we show that this universally accepted picture can be invalid in nanoscale heterostructures (e.g., quantum dots, rods, nanowires) which can be presently fabricated in a large variety of forms. Self-consistent tight-binding calculations applied to systems containing up to 75 000 atoms indeed demonstrate that the potential may have a more complex behavior in axial hetero-nanostructures: The band edges can show significant variations far from the interfaces if the nanostructures are not capped with a homogeneous shell. These results suggest new strategies to engineer the electronic properties of nanoscale objects, e.g. for sensors and photovoltaics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Theoretical characterization of the electronic properties of extended thienylenevinylene oligomers

We present semiempirical tight binding calculations on thienylenevinylene oligomers up to the hexadecamer stage (n=16) and ab initio calculations based on the local density approximation up to n=8. The results correctly describe the experimental variations of the gap versus size, the optical spectra, and the electrochemical redox potentials. We propose a simple model to deduce from the band structure of the polymer chain the electronic states of the oligomers close to the gap. We analyze the evolution of the gap as a function of the torsion angle between consecutive cells: the modifications are found to be small up to a ~30^{\circ}; angle. We show that these oligomers possess extensive pi-electron delocalization along the molecular backbone which makes them interesting for future electronic applications such as molecular wires.

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preprint2011arXiv

Tight binding description of the electronic response of a molecular device to an applied voltage

We analyze the effect of an external electric field on the electronic structure of molecules which have been recently studied as molecular wires or diodes. We use a self-consistent tight binding technique which provides results in good agreement with ab initio calculations and which may be applied to a large number of molecules. The voltage dependence of the molecular levels is mainly linear with slopes intimately related to the electronic structure of the molecules. We emphasize that the response to the applied voltage is an important feature which governs the behavior of a molecular device.

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preprint2010arXiv

Charged impurity scattering and mobility in gated silicon nanowires

We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is calculated with a tight-binding method and the transport properties with a Landauer-Buttiker Green functions approach and the linearized Boltzmann transport equation (LBTE) in the first Born approximation. Based on our numerical results we argue that: (1) There are large differences between Phosphorous (P) and Boron (B) doped systems, acceptors behaving as tunnel barriers for the electrons, while donors give rise to Fano resonances in the transmission. (2) As a consequence, the mobility is much larger in P- than in B-doped nanowires at low carrier density, but can be larger in B-doped nanowires at high carrier density. (3) The resistance of a single impurity is strongly dependent on its radial position in the nanowire, especially for acceptors. (4) As a result of subband structure and screening effects, the impurity-limited mobility can be larger in thin nanowires embedded in HfO2 than in bulk Si. Acceptors might, however, strongly hinder the flow of electrons in thin nanowires embedded in SiO2. (5) The perturbative LBTE largely fails to predict the correct mobilities in quantum-confined nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Molecular rectifying diodes from self-assembly on silicon

We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show that rectification occurs from resonance through the highest occupied molecular orbital of the p-group in good agreement with our calculations and internal photoemission spectroscopy. This approach allows us to fabricate molecular rectifying diodes compatible with silicon nanotechnologies for future hybrid circuitries.

0 citations0 reviewsNo code linkedOpen access