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Hassaram Bakhru

Hassaram Bakhru contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Transform-limited photons from a coherent tin-vacancy spin in diamond

Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phononlimited with an exponential temperature scaling leading to $T_1$ $>$ 10 ms, and the coherence time, $T_2$ reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.

preprint2014arXiv

Extrinsic Photodiodes for Integrated Mid-Infrared Silicon Photonics

Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials. Leveraging the dopant-induced sub-bandgap trap-states used in bulk photoconductors for waveguide integrated mid-infrared detectors offers simple processing, integration, and operation throughout the mid-infrared by appropriate choice of dopant. In particular, Si doped with Zn forms two trap levels ~ 0.3 eV and ~ 0.58 eV above the valence band, and has been utilized extensively for cryogenically cooled bulk extrinsic photoconductors. In this letter, we present room temperature operation of Zn+ implanted Si waveguide photodiodes from 2200 nm to 2400 nm, with measured responsivities of up to 87 mA/W and low dark currents of < 10 microamps.