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Benjamin Lienhard

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Published work

4 published item(s)

preprint2021arXiv

Bright and photostable single-photon emitter in silicon carbide

Single-photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling photon counts per second in excess of 2$\times$10$^6$ from unpatterned bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low-temperature measurements reveal a narrow zero phonon line (linewidth $<0.1~$nm) that accounts for $>30$% of the total photoluminescence spectrum.

preprint2020arXiv

Bright high-purity quantum emitters in aluminium nitride integrated photonics

Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, we report the generation and direct integration of QEs in an aluminium nitride-based photonic integrated circuit platform. For individual waveguide-integrated QEs, we measure an off-chip count rate exceeding $6 \times 10^{4}$ counts per second (cps) (saturation rate > $8.6 \times 10^{4}$ cps). In an unpatterned thin-film sample, we measure antibunching with $g^{(2)}(0) \sim 0.05$ and photon count rates exceeding $8 \times 10^{5}$ cps (saturation rate > $1 \times 10^{6}$ cps). Although spin and detailed optical linewidth measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.

preprint2020arXiv

Transform-limited photons from a coherent tin-vacancy spin in diamond

Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phononlimited with an exponential temperature scaling leading to $T_1$ $>$ 10 ms, and the coherence time, $T_2$ reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.

preprint2019arXiv

Microwave Packaging for Superconducting Qubits

Over the past two decades, the performance of superconducting quantum circuits has tremendously improved. The progress of superconducting qubits enabled a new industry branch to emerge from global technology enterprises to quantum computing startups. Here, an overview of superconducting quantum circuit microwave control is presented. Furthermore, we discuss one of the persistent engineering challenges in the field, how to control the electromagnetic environment of increasingly complex superconducting circuits such that they are simultaneously protected and efficiently controllable.