Researcher profile

Harry A. Atwater

Harry A. Atwater contributes to research discovery and scholarly infrastructure.

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Published work

17 published item(s)

preprint2021arXiv

Impact of Semiconductor Band Tails and Band Filling on Photovoltaic Efficiency Limits

The theoretical maximum efficiency of a solar cell is typically characterized by a detailed balance of optical absorption and emission for a semiconductor in the limit of unity radiative efficiency and an ideal step-function response for the density of states and absorbance at the semiconductor band edges, known as the Shockley-Queisser limit. However, real materials have non-abrupt band edges, which are typically characterized by an exponential distribution of states, known as an Urbach tail. We develop here a modified detailed balance limit of solar cells with imperfect band edges, using optoelectronic reciprocity relations. We find that for semiconductors whose band edges are broader than the thermal energy, kT, there is an effective renormalized bandgap given by the quasi-Fermi level splitting within the solar cell. This renormalized bandgap creates a Stokes shift between the onset of the absorption and photoluminescence emission energies, which significantly reduces the maximum achievable efficiency. The abruptness of the band edge density of states therefore has important implications for the maximum achievable photovoltaic efficiency.

preprint2021arXiv

Nanoscale axial position and orientation measurement of hexagonal boron nitride quantum emitters using a tunable nanophotonic environment

Color centers in hexagonal boron nitride (hBN) have emerged as promising candidates for single-photon emitters (SPEs) due to their bright emission characteristics at room temperature. In contrast to mono- and few-layered hBN, color centers in multi-layered flakes show superior emission characteristics such as higher saturation counts and spectral stability. Here, we report a method for determining both the axial position and three-dimensional dipole orientation of SPEs in thick hBN flakes by tuning the photonic local density of states using vanadium dioxide (VO2), a phase change material. Emitters under study exhibit a strong surface-normal dipole orientation, providing some insight on the atomic structure of hBN SPEs, deeply embedded in thick crystals. We have optimized a hot pickup technique to reproducibly transfer flakes of hBN from VO2 onto SiO2/Si substrate and relocated the same emitters. Our approach serves as a practical method to systematically characterize SPEs in hBN prior to integration in quantum photonics systems.

preprint2020arXiv

Controlling the dopant profile for SRH suppression at low current densities in $λ\approx$ 1330nm GaInAsP light-emitting diodes

The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley-Read-Hall (SRH) recombination. To demonstrate this effect we model, design, grow, fabricate, and test a GaInAsP LED ($λ\approx$ 1330nm) with an unconventional dopant profile. Compared against that of our control design, which is a conventional $n^+$-$n$-$p^+$ double hetero-junction LED, the dopant profile near the $n$-$p^+$ hetero-structure of the new design displaces the built-in electric field in such a way as to suppress the J02 space charge recombination current. The design principle generalizes to other material systems and could be applicable to efforts to observe and exploit electro-luminescent refrigeration at practical power densities.

preprint2020arXiv

Tunable intraband optical conductivity and polarization-dependent epsilon-near-zero behavior in black phosphorus

Black phosphorus (BP) offers considerable promise for infrared and visible photonics. Efficient tuning of the bandgap and higher subbands in BP by modulation of the Fermi level or application of vertical electric fields has been previously demonstrated, allowing electrical control of its above bandgap optical properties. Here, we report modulation of the optical conductivity below the band-gap (5-15 um) by tuning the charge density in a two-dimensional electron gas (2DEG) induced in BP, thereby modifying its free carrier dominated intraband response. With a moderate doping density of 7x10^12/cm2 we were able to observe a polarization dependent epsilon-near-zero behavior in the dielectric permittivity of BP. The intraband polarization sensitivity is intimately linked to the difference in effective fermionic masses along the two crystallographic directions, as confirmed by our measurements. Our results suggest the potential of multilayer BP to allow new optical functions for emerging photonics applications.

preprint2016arXiv

Ab initio phonon coupling and optical response of hot electrons in plasmonic metals

Ultrafast laser measurements probe the non-equilibrium dynamics of excited electrons in metals with increasing temporal resolution. Electronic structure calculations can provide a detailed microscopic understanding of hot electron dynamics, but a parameter-free description of pump-probe measurements has not yet been possible, despite intensive research, because of the phenomenological treatment of electron-phonon interactions. We present ab initio predictions of the electron-temperature dependent heat capacities and electron-phonon coupling coefficients of plasmonic metals. We find substantial differences from free-electron and semi-empirical estimates, especially in noble metals above transient electron temperatures of 2000 K, because of the previously-neglected strong dependence of electron-phonon matrix elements on electron energy. We also present first-principles calculations of the electron-temperature dependent dielectric response of hot electrons in plasmonic metals, including direct interband and phonon-assisted intraband transitions, facilitating complete theoretical predictions of the time-resolved optical probe signatures in ultrafast laser experiments.

preprint2016arXiv

Near Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics

We demonstrate near unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (< 15 nm) Van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

preprint2016arXiv

Three-dimensional single gyroid photonic crystals with a mid-infrared bandgap

A gyroid structure is a distinct morphology that is triply periodic and consists of minimal isosurfaces containing no straight lines. We have designed and synthesized amorphous silicon (a-Si) mid-infrared gyroid photonic crystals that exhibit a complete bandgap in infrared spectroscopy measurements. Photonic crystals were synthesized by deposition of a-Si/Al2O3 coatings onto a sacrificial polymer scaffold defined by two-photon lithography. We observed a 100% reflectance at 7.5 \mum for single gyroids with a unit cell size of 4.5 \mum, in agreement with the photonic bandgap position predicted from full-wave electromagnetic simulations, whereas the observed reflection peak shifted to 8 um for a 5.5 \mum unit cell size. This approach represents a simulation-fabrication-characterization platform to realize three-dimensional gyroid photonic crystals with well-defined dimensions in real space and tailored properties in momentum space.

preprint2015arXiv

Cooperative behavior of quantum dipole emitters coupled to a zero-index nanoscale waveguide

We study cooperative behavior of quantum dipole emitters coupled to a rectangular waveguide with dielectric core and silver cladding. We investigate cooperative emission and inter-emitter entanglement generation phenomena for emitters whose resonant frequencies are near the frequency cutoff of the waveguide, where the waveguide effectively behaves as zero-index metamaterial. We show that coupling emitters to a zero-index waveguide allows one to relax the constraint on precision positioning of emitters for observing inter-emitter entanglement generation and extend the spatial scale at which the superradiance can be observed.

preprint2015arXiv

Field-effect induced tunability in planar hyperbolic metamaterials

We demonstrate that use of the field effect to tune the effective optical parameters of a layered hyperbolic metamaterial leads to topological transitions in its dispersion characteristics in the optical regime. Field effect gating electrically modulates the permittivity in transparent conductive oxides via changes in the carrier density. These permittivity changes lead to active extreme modulation of ~200% of the effective electromagnetic parameters along with active control of the anisotropic dispersion surface of hyperbolic metamaterials and enable the opening and closing of photonic band gaps.

preprint2015arXiv

Gate-tunable conducting oxide metasurfaces

Metasurfaces composed of planar arrays of sub-wavelength artificial structures show promise for extraordinary light manipulation; they have yielded novel ultrathin optical components such as flat lenses, wave plates, holographic surfaces and orbital angular momentum manipulation and detection over a broad range of electromagnetic spectrum. However the optical properties of metasurfaces developed to date do not allow for versatile tunability of reflected or transmitted wave amplitude and phase after fabrication, thus limiting their use in a wide range of applications. Here, we experimentally demonstrate a gate-tunable metasurface that enables dynamic electrical control of the phase and amplitude of the plane wave reflected from the metasurface. Tunability arises from field-effect modulation of the complex refractive index of conducting oxide layers incorporated into metasurface antenna elements which are configured in a reflectarray geometry. We measure a phase shift of π and ~ 30% change in the reflectance by applying 2.5 V gate bias. Additionally, we demonstrate modulation at frequencies exceeding 10 MHz, and electrical switching of +/-1 order diffracted beams by electrical control over subgroups of metasurface elements, a basic requirement for electrically tunable beam-steering phased array metasurfaces. The proposed tunable metasurface design with high optical quality and high speed dynamic phase modulation suggests applications in next generation ultrathin optical components for imaging and sensing technologies, such as reconfigurable beam steering devices, dynamic holograms, tunable ultrathin lens, nano-projectors, and nanoscale spatial light modulators. Importantly, our design allows complete integration with electronics and hence electrical addressability of individual metasurface elements.

preprint2015arXiv

Omnidirectional and broadband absorption enhancement from trapezoidal Mie resonators in semiconductor metasurfaces

Light trapping in planar ultrathin-film solar cells is limited due to a small number of optical modes available in the thin-film slab. A nanostructured thin-film design could surpass this limit by providing broadband increase in the local density of states in a subwavelength volume and maintaining efficient coupling of light. Here we report a broadband metasurface design, enabling efficient and broadband absorption enhancement by direct coupling of incoming light to resonant modes of subwavelength-scale Mie nanoresonators defined in the thin-film active layer. Absorption was investigated both theoretically and experimentally in prototypes consisting of lithographically patterned, two-dimensional periodic arrays of silicon nanoresonators on silica substrates. A crossed trapezoid resonator shape of rectangular cross section is used to excite broadband Mie resonances across the visible and near-IR spectra. Our numerical simulations, optical absorption measurements and photocurrent spectral response measurements demonstrate that crossed trapezoidal Mie resonant structures enable angle-insensitive, broadband absorption. A short circuit current density of 12.0 mA/cm2 is achieved in 210 nm thick patterned Si films, yielding a 4-fold increase compared to planar films of the same thickness. It is suggested that silicon metasurfaces with Mie resonator arrays can provide useful insights to guide future ultrathin-film solar cell designs incorporating nanostructured thin active layers.

preprint2014arXiv

Electronic modulation of infrared emissivity in graphene plasmonic resonators

Electronic control of blackbody emission from graphene plasmonic resonators on a silicon nitride substrate is demonstrated at temperatures up to 250 C. It is shown that the graphene resonators produce antenna-coupled blackbody radiation, manifest as narrow spectral emission peaks in the mid-IR. By continuously varying the nanoresonators carrier density, the frequency and intensity of these spectral features can be modulated via an electrostatic gate. We describe these phenomena as plasmonically enhanced radiative emission originating both from loss channels associated with plasmon decay in the graphene sheet and from vibrational modes in the SiNx.

preprint2014arXiv

Retrieval of material parameters for uniaxial metamaterials

We present a general method for retrieving the effective tensorial permittivity of any uniaxially anisotropic metamaterial. By relaxing the usually imposed condition of non-magnetic metal/dielectric metamaterials, we also retrieve the permeability tensor and show that hyperbolic metamaterials exhibit a strong diamagnetic response in the visible regime. We obtain global material parameters, directly measurable with spectroscopic ellipsometry and distinguishable from mere wave parameters, by using the generalized dispersion equation for uniaxial crystals along with existing homogenization methods. Our method is analytically and experimentally verified for Ag/SiO2 planar metamaterials with varying number of layers and compared to the effective medium theory. We also propose an experimental method for retrieving material parameters using methods other than ellipsometry.

preprint2013arXiv

Functional plasmonic nano-circuits with low insertion and propagation losses

We experimentally demonstrate plasmonic nano-circuits operating as sub-diffraction directional couplers optically excited with high efficiency from free-space using optical Yagi-Uda style antennas at λ= 1550 nm. The optical Yagi-Uda style antennas are designed to feed channel plasmon waveguides with high efficiency (45 % in coupling, 60 % total emission), narrow angular directivity (< 40°) and low insertion loss. SPP gap waveguides exhibit propagation lengths as large as 34 μm with adiabatically tuned confinement, and are integrated with ultra-compact (5 μm x 10 μm), highly dispersive directional couplers, which enable 30 dB discrimination over Δλ = 200 nm with only 0.3 dB device loss.

preprint2013arXiv

Tunable Large Resonant Absorption in a Mid-IR Graphene Salisbury Screen

Enhancing the interaction strength between graphene and light is an important objective for those seeking to make graphene a relevant material for future optoelectronic applications. Plasmonic modes in graphene offer an additional pathway of directing optical energy into the graphene sheet, while at the same time displaying dramatically small optical confinement factors that make them an interesting means of coupling light to atomic or molecular emitters. Here we show that graphene plasmonic nanoresonators can be placed a quarter wavelength from a reflecting surface and electronically tuned to mimic a surface with an impedance closely matched to freespace (Z0 = 377Ω). This geometry - known in early radar applications as a Salisbury screen - allows for an order of magnitude (from 2.3 to 24.5%) increase of the optical absorption in the graphene and provides an efficient means of coupling to the highly confined graphene plasmonic modes.

preprint2012arXiv

The plasmoelectric effect: optically induced electrochemical potentials in resonant metallic structures

We describe a strategy for conversion of optical power into DC electrical power using resonant absorption in plasmonic nanostructures. A thermodynamic analysis of the underlying mechanism motivates our description of the phenomenon, which we term the plasmoelectric effect. Power conversion results from the dependence of optically generated heat on shifts of the plasmon resonance frequency that occur with changes of electron density. We model an all-metal device constructed from 10 nm radius silver spheres and predict a characteristic conversion efficiency of 14.3% under 1 kW m-2 intensity, single-frequency radiation. We discuss strategies for enhanced efficiency, broadband power conversion, and further applications of this new class of optoelectronic device.

preprint2009arXiv

Resonant guided wave networks

A resonant guided wave network (RGWN) is an approach to optical materials design in which power propagation in guided wave circuits enables material dispersion. The RGWN design, which consists of power-splitting elements arranged at the nodes of a waveguide network, results in wave dispersion which depends on network layout due to localized resonances at several length scales in the network. These structures exhibit both localized resonances with Q ~ 80 at 1550 nm wavelength as well as photonic bands and band-gaps in large periodic networks at infrared wavelengths.