Researcher profile

Haotian Zhu

Haotian Zhu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

E$^2$AT: Multimodal Jailbreak Defense via Dynamic Joint Optimization for Multimodal Large Language Models

Research endeavors have been made in learning robust Multimodal Large Language Models (MLLMs) against jailbreak attacks. However, existing methods for improving MLLMs' robustness still face critical challenges: \ding{172} how to efficiently tune massive weight parameters and \ding{173} how to ensure robustness against attacks across both visual and textual modalities. To this end, we propose an \textbf{E}fficient \textbf{E}nd-to-end \textbf{A}dversarial \textbf{T}raining (E$^2$AT) framework for both visual and textual adversarial attacks. Specifically, for the visual aspect, E$^2$AT incorporates an efficient projector-based AT module that aligns the attack samples at the feature level. For training objectives, we propose a Dynamic Joint Multimodal Optimization (DJMO) strategy to enhance generalization ability against jailbreak attacks by dynamically adjusting weights between normal and adversarial objectives. Extensive experiments are conducted with five major jailbreak attack methods across three mainstream MLLMs. Results demonstrate that our E$^2$AT achieves the state-of-the-art performance, outperforming existing baselines by an average margin of 34\% across text and image modalities, while maintaining clean task performance. Furthermore, evaluations of real-world embodied intelligent systems highlight the practical applicability of E$^2$AT, paving the way for the development of more secure and reliable multimodal systems. Our code is available on \href{https://anonymous.4open.science/r/E2AT_568}{\textcolor{red}{https://anonymous.4open.science/r/E2AT\_568}}.

preprint2020arXiv

Pressure induced gap modulation and topological transitions in twisted bilayer and double bilayer graphene

We study the electronic and topological properties of fully relaxed twisted bilayer (TBG) and double bilayer (TDBG) graphene under perpendicular pressure. An approach has been proposed to obtain the equilibrium in-plane structural deformation and out-of-plane corrugation in moiré superlattices under pressure. We find that the in-plane relaxation becomes much stronger under higher pressure, while the corrugation height in each layer is maintained. The comparison between band structures of relaxed and rigid structures demonstrates that not only the gaps on the electron and hole sides ($Δ_e$ and $Δ_h$) are significantly underestimated without relaxation but also the detailed dispersions of the middle bands of rigid structures are rather different from those of relaxed systems. $Δ_e$ and $Δ_h$ in TBG reach maximum values around critical pressures with narrowest middle bands. Topological transitions occur in TDBG under pressure with the middle valence and conduction bands in one valley touching and their Chern numbers transferred to each other. The pressure can also tune the gap at the neutrality point of TDBG, which becomes closed for a pressure range and reopened under higher pressure. The behavior of electronic structure of supertlattices under pressure is sensitive to the twist angle $θ$ with the critical pressures generally increase with $θ$.