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Han Htoon

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cond-mat.mes-hall quant-ph cond-mat.mtrl-sci physics.app-ph physics.comp-ph physics.optics

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preprint2022arXiv

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Interlayer excitons (IXs) formed at the interface of atomically-thin semiconductors possess various novel properties. In a parallel development, nanoscale strain engineering has emerged as an effective means for creating 2D quantum light sources. Exploring the intersection of these two exciting areas, where strain and defects are exploited for the manipulation of IX toward the emergence of new functionalities, is currently at a nascent stage. Here, using MoS2/WSe2 heterostructure as a model system, we demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. We were able to achieve ultra-high single-photon purity with g(2)(0) = 0.01. Our strategy of creating site-controlled QEs from the defect-bound IXs represents a paradigm shift in 2D quantum photonics research, from engineering intralayer exciton in monolayer structures towards IXs at the interface of 2D heterostructures.

preprint2022arXiv

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe2/NiPS3 Heterostructures

Quantum light emitters (QEs) capable of generating single photons of well-defined circular polarization could enable non-reciprocal single photon devices and deterministic spin-photon interfaces critical for realizing complex quantum networks. To date, emission of such chiral quantum light has been achieved via the application of intense external magnetic field electrical/optical injection of spin polarized carriers/excitons, or coupling with complex photonic/meta-structures. Here we report free-space generation of highly chiral single photons from QEs created in monolayer WSe2 - NiPS3 heterostructures at zero external magnetic field. These QEs emit in the 760-800 nm range with a degree of circular polarization and single photon purity as high as 0.71 and 80% respectively, independent of pump laser polarization. QEs are deterministically created by pressing a scanning probe microscope tip into a two-dimensional heterostructure comprising a WSe2 monolayer and a ~50 nm thick layer of the antiferromagnetic (AFM) insulator NiPS3. Temperature dependent magneto-photoluminescence studies indicate that the chiral quantum light emission arises from magnetic proximity interactions between localized excitons in the WSe2 monolayer and the out-of-plane magnetization of AFM defects in NiPS3, both of which are co-localized by the strain field arising from the nanoscale indentations.

preprint2021arXiv

Site-Controlled Telecom Single-Photon Emitters in Atomically-thin MoTe2

Quantum emitters (QEs) in two-dimensional transition metal dichalcogenides (2D TMDCs) have advanced to the forefront of quantum communication and transduction research due to their unique potentials in accessing valley pseudo-spin degree of freedom (DOF) and facile integration into quantum-photonic, electronic and sensing platforms via the layer-by-layer-assembly approach. To date, QEs capable of operating in O-C telecommunication bands have not been demonstrated in TMDCs. Here we report a deterministic creation of such telecom QEs emitting over the 1080 to 1550 nm wavelength range via coupling of 2D molybdenum ditelluride (MoTe2) to strain inducing nano-pillar arrays. Our Hanbury Brown and Twiss experiment conducted at 10 K reveals clear photon antibunching with 90% single photon purity. Ultra-long lifetimes, 4-6 orders of magnitude longer than that of the 2D exciton, are also observed. Polarization analysis further reveals that while some QEs display cross-linearly polarized doublets with ~1 meV splitting resulting from the strain induced anisotropic exchange interaction, valley degeneracy is preserved in other QEs. Valley Zeeman splitting as well as restoring of valley symmetry in cross-polarized doublets are observed under 8T magnetic field. In contrast to other telecom QEs, our QEs which offer the potential to access valley DOF through single photons, could lead to unprecedented advantages in optical fiber-based quantum networks.

preprint2021arXiv

The scaling of the microLED and the advantage of 2D materials

The demand for higher resolution displays drives the demand for smaller pixels. Displays show a trend of doubling the pixel number every 4 years and doubling the pixel per inch (PPI) every 6 years. As the prospective candidate for next-generation display technology, microLED (micro Light Emitting Diode) will suffer from sidewall current leakage and poor extraction efficiency as its lateral size reduces. Using Finite Element Analysis (FEA) method and Finite-Difference Time-Domain (FDTD) method, we find that reducing the thickness of the LED can reduce the current leaking to the sidewalls and reduce the total internal reflection simultaneously. A promising solution to this problem is by using atomically thin 2D materials to make LEDs. However, monolayer inorganic 2D materials that can provide red, green and blue emission are still lacking. Based on the blue light-emitting material fluorographene (CF), partially fluorinated graphene (CFx) is synthesized in this work to emit red and green colors from 683 nm to 555 nm (limited by the instrument). This work also demonstrates lithographically defined regions with different colors, paving the way for the scaling of microLED.

preprint2016arXiv

Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

preprint2015arXiv

Influences of Exciton Diffusion and Exciton-Exciton Annihilation on Photon Emission Statistics of Carbon Nanotubes

Pump-dependent photoluminescence imaging and 2nd order photon correlation studies have been performed on individual single-walled carbon nanotubes (SWCNTs) at room temperature that enable the extraction of both the exciton diffusion constant and the Auger recombination coefficient. A linear correlation between these is attributed to the effect of environmental disorder in setting the exciton mean free-path and capture-limited Auger recombination at this lengthscale. A suppression of photon antibunching is attributed to creation of multiple spatially non-overlapping excitons in SWCNTs whose diffusion length is shorter than the laser spot size. We conclude that complete antibunching at room temperature requires an enhancement of exciton-exciton annihilation rate that may become realizable in SWCNTs allowing for strong exciton localization.

preprint2013arXiv

Intrinsic lineshape of the Raman 2D-mode in freestanding graphene monolayers

We report a comprehensive study of the two-phonon inter-valley (2D) Raman mode in graphene monolayers, motivated by recent reports of asymmetric 2D-mode lineshapes in freestanding graphene. For photon energies in the range $1.53 \rm eV - 2.71 \rm eV$, the 2D-mode Raman response of freestanding samples appears as bimodal, in stark contrast with the Lorentzian approximation that is commonly used for supported monolayers. The transition between the freestanding and supported cases is mimicked by electrostatically doping freestanding graphene at carrier densities above $2\times 10^{11} \rm cm^{-2}$. This result quantitatively demonstrates that low levels of charging can obscure the intrinsically bimodal 2D-mode lineshape of monolayer graphene, which can be utilized as a signature of a quasi-neutral sample. In pristine freestanding graphene, we observe a broadening of the 2D-mode feature with decreasing photon energy that cannot be rationalized using a simple one-dimensional model based on resonant \textit{inner} and \textit{outer} processes. This indicates that phonon wavevectors away from the high-symmetry lines of the Brillouin zone must contribute to the 2D-mode, so that a full two-dimensional calculation is required to properly describe multiphonon-resonant Raman processes.