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Hailong Fu

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Published work

7 published item(s)

preprint2020arXiv

Finite-thickness effect and spin polarization of the even-denominator fractional quantum Hall states

The spin-polarized even-denominator fractional quantum Hall (FQH) states in the second Landau level (LL), i.e. 5/2 and 7/2, may possess novel quasi-particle excitations obeying non-Abelian statistics. However, the spin polarization of the 7/2 FQH state has not been investigated experimentally and the spin polarization of the 5/2 FQH state from tilted field experiments remains controversial. Using a piezo-driven sample rotator with the lowest electron temperature down to 25 mK, we studied the energy gap of the even-denominator FQH states in the second LL by precise control of the tilted angles with a resolution less than 0.1°. We observed two different energy gap dependences on the in-plane magnetic field for 5/2, 7/2, other FQH states (7/3 and 8/3) in the second LL and reentrant integer quantum Hall (RIQH) states in the third LL. Though the transition fields vary from states, their corresponding in-plane magnetic lengths are comparable to the quantum well thickness of the sample, which may result from the influence of the finite-thickness effect. At low in-plane magnetic fields, before the conjectured finite-thickness effect starts to dominate, the energy gaps of both 5/2 and 7/2 states show a non-decreasing behavior, supporting spin-polarized ground states. Our results also suggest that the 7/3, 8/3 FQH states, and the RIQH states in the third LL are spin-polarized or partially spin-polarized.

preprint2020arXiv

Superconducting proximity effect in a transparent van der Waals superconductor-metal junction

We report on Andreev reflections at clean NbSe2-bilayer graphene junctions. The high transparency of the junction, which manifests as a large conductance enhancement of up to 1.8, enables us to see clear evidence of a proximity-induced superconducting gap in bilayer graphene and two Andreev reflections through a vertical NbSe2-graphene and a lateral graphene-graphene junction respectively. Quantum transport simulations capture the complexity of the experimental data and illuminate the impact of various microscopic parameters on the transmission of the junction. Our work establishes the practice and understanding of an all-van-der-Waals, high-performance superconducting junction. The realization of a highly transparent proximized graphene-graphene junction opens up possibilities to engineer emergent quantum phenomena.

preprint2016arXiv

Competing ν= 5/2 fractional quantum Hall states in confined geometry

Some theories predict that the filling factor 5/2 fractional quantum Hall state can exhibit non-Abelian statistics, which makes it a candidate for fault-tolerant topological quantum computation. Although the non-Abelian Pfaffian state and its particle-hole conjugate, the anti-Pfaffian state, are the most plausible wave functions for the 5/2 state, there are a number of alternatives with either Abelian or non-Abelian statistics. Recent experiments suggest that the tunneling exponents are more consistent with an Abelian state rather than a non-Abelian state. Here, we present edge-current-tunneling experiments in geometrically confined quantum point contacts, which indicate that Abelian and non-Abelian states compete at filling factor 5/2. Our results are consistent with a transition from an Abelian state to a non-Abelian state in a single quantum point contact when the confinement is tuned. Our observation suggests that there is an intrinsic non-Abelian 5/2 ground state, but that the appropriate confinement is necessary to maintain it. This observation is important not only for understanding the physics of the 5/2 state, but also for the design of future topological quantum computation devices.

preprint2016arXiv

Nonlinear Transport of Graphene in the Quantum Hall Regime

We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the v=6 states might be a better target for the quantum resistance standard.

preprint2015arXiv

Observation of a Helical Luttinger-Liquid in InAs/GaSb Quantum Spin Hall Edges

We report on the observation of a helical Luttinger-liquid in the edge of InAs/GaSb quantum spin Hall insulator, which shows characteristic suppression of conductance at low temperature and low bias voltage. Moreover, the conductance shows power-law behavior as a function of temperature and bias voltage. The results underscore the strong electron-electron interaction effect in transport of InAs/GaSb edge states. Because of the fact that the Fermi velocity of the edge modes is controlled by gates, the Luttinger parameter can be fine tuned. Realization of a tunable Luttinger-liquid offers a one-dimensional model system for future studies of predicted correlation effects.

preprint2014arXiv

De-Pinning Transition of Bubble Phases in a High Landau Level

While in the lowest Landau level the electron-electron interaction leads to the formation of the Wigner crystal, in higher Landau levels a solid phase with multiple electrons in a lattice site of crystal was predicted, which was called the bubble phase. Reentrant integer quantum Hall states are believed to be the insulating bubble phase pinned by disorder. We carry out nonlinear transport measurements on the reentrant states and study the de-pinning of the bubble phase, which is complementary to previous microwave measurements and provides unique information. In this study, conductivity is directly measured with Corbino geometry. Based on the threshold electric field of de-pinning, a phase diagram of the reentrant state is mapped. We discuss an interaction-driven topological phase transition between the integer quantum Hall state and the reentrant integer quantum Hall state.