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Haibin Su

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Published work

10 published item(s)

preprint2021arXiv

Effect of Varying the TD-lc-DFTB Range-Separation Parameter on Charge and Energy Transfer in a Model Pentacene/Buckminsterfullerene Heterojunction

Density-functional tight binding (DFTB) has become a popular form of approximate density-functional theory (DFT) based upon a minimal valence basis set and neglect of all but two center integrals. We report the results of our tests of a recent long-range correction (lc) for time-dependent (TD) lc-DFTB by carrying out TD-lc-DFTB fewest switches surface hopping (FSSH) calculations of energy and charge transfer times using the relatively new DFTBaby program. An advantage of this method is the ability to run enough trajectories to get meaningful ensemble averages. Our interest in the present work is less in determining exact energy and charge transfer rates than in understanding how the results of these calculations vary with the value of the range-separation parameter (Rlc = 1/μ) for a model organic solar cell heterojunction consisting of a van der Waals complex P/F made up of single pentacene (P) molecule together with a single buckminsterfullerene (F) molecule. The default value of Rlc = 3.03 a0 is found to be much too small as neither energy nor charge transfer is observed until Rlc ~ 10 a0. Tests at a single geometry show that best agreement with high-quality ab-initio spectra is obtained in the limit of no lc (i.e., very large Rlc.) A plot of energy and charge transfer rates as a function of Rlc is provided which suggests that a value of Rlc ~ 15 a0 yields the typical literature charge transfer time of about 100 fs. However, energy and charge transfer times become as high as ~ 300 fs for Rlc ~ 25 a0. A closer examination of the charge transfer process P*/F to P+/F- shows that the initial electron transfer is accompanied by a partial delocalization of the P hole onto F which then relocalizes back onto P, consistent with a polaron-like picture in which the nuclei relax to stabilize the resultant redistribution of charges.

preprint2020arXiv

Epitaxial engineering of flat silver fluorides cuprate analogs

As-grown AgF2 has a remarkably similar electronic structure as insulating cuprates, but it is extremely electronegative, which makes it hard to handle and dope. Furthermore, buckling of layers reduces magnetic interactions and enhances unwanted self-trapping lattice effects. We argue that epitaxial engineering can solve all these problems. By using a high throughput approach and first principle computations, we find a set of candidate substrates which can sustain the chemical aggressiveness of AgF2 and at the same time have good lattice parameter matching for heteroepitaxy, enhancing AgF2 magnetic and transport properties and opening the possibility of field-effect carrier injection to achieve a new generation of high-Tc superconductors. Assuming a magnetic mechanism and extrapolating from cuprates we predict that the superconducting critical temperature of a single layer can reach 195 K.

preprint2020arXiv

Nonlinear optical response from quantum kinetic equation

Motivated by the nonlinear Hall effect observed in topological semimetals, we studied the photocurrent by the quantum kinetic equation. We recovered the shift current and injection current discovered by Sipe et al., and the nonlinear Hall current induced by Berry curvature dipole (BCD) proposed by Inti Sodemann and Liang Fu. Especially, we further proposed that 3-form tensor can also induce photocurrent, in addition to the Berry curvature and BCD. This work will supplement the existing mechanisms for photocurrent. In contrast to the shift current induced by shift vector, all photocurrents induced by gradient/curl of Berry curvature, and high rank tensor require circularly polarized light and topologically non-trivial band structure, viz. non-vanishing Berry curvature.

preprint2015arXiv

GdN thin-film: Chern Insulating State on Square Lattice

Using first-principles calculations, we predict a Chern insulating phase in thin films of the ferromagnetic semi-metal GdN. In contrast to previously proposed Chern insulator candidates, which mostly rely on honeycomb lattices, this system affords a great chance to realize the quantum anomalous Hall Effect on a square lattice without either a magnetic substrate or transition metal doping, making synthesis easier. The band inversion between 5d-orbitals of Gd and 2p-orbitals of N is verified by first-principles calculation based on density functional theory, and the band gap can be as large as 100 meV within GdN trilayer. With further increase of film thickness, the band gap tends to close and the metallic bulk property becomes obvious.

preprint2013arXiv

Terahertz conductivity of twisted bilayer graphene

Using terahertz time-domain spectroscopy, the real part of optical conductivity [$σ_{1}(ω)$] of twisted bilayer graphene was obtained at different temperatures (10 -- 300 K) in the frequency range 0.3 -- 3 THz. On top of a Drude-like response, we see a strong peak in $σ_{1} (ω)$ at $\sim$2.7 THz. We analyze the overall Drude-like response using a disorder-dependent (unitary scattering) model, then attribute the peak at 2.7 THz to an enhanced density of states at that energy, that is caused by the presence of a van Hove singularity arising from a commensurate twisting of the two graphene layers.

preprint2012arXiv

Ultrafast carrier phonon dynamics in NaOH-reacted graphite oxide film

NaOH-reacted graphite oxide film was prepared by decomposing epoxy groups in graphite oxide into hydroxyl and -ONa groups with NaOH solution. Ultrafast carrier dynamics of the sample were studied by time-resolved transient differential reflection (\DeltaR/R). The data show two exponential relaxation processes. The slow relaxation process (\sim2ps) is ascribed to low energy acoustic phonon mediated scattering. The electron-phonon coupling and first-principles calculation results demonstrate that - OH and -ONa groups in the sample are strongly coupled. Thus, we attribute the fast relaxation process (\sim0.17ps) to the coupling of hydroxyl and -ONa groups in the sample.

preprint2011arXiv

Theory of high energy optical conductivity and the role of oxygens in manganites

Recent experimental study reveals the optical conductivity of La$_{1-x}$Ca$_x$MnO$_3$ over a wide range of energy and the occurrence of spectral weight transfer as the system transforms from paramagnetic insulating to ferromagnetic metallic phase [Rusydi {\it et al.}, Phys. Rev. B {\bf 78}, 125110 (2008)]. We propose a model and calculation within the Dynamical Mean Field Theory to explain this phenomenon. We find the role of oxygens in mediating the hopping of electrons between manganeses as the key that determines the structures of the optical conductivity. In addition, by parametrizing the hopping integrals through magnetization, our result suggests a possible scenario that explains the occurrence of spectral weight transfer, in which the ferromagnatic ordering increases the rate of electron transfer from O$_{2p}$ orbitals to upper Mn$_{e_g}$ orbitals while simultaneously decreasing the rate of electron transfer from O$_{2p}$ orbitals to lower Mn$_{e_g}$orbitals, as temperature is varied across the ferromagnetic transition. With this scenario, our optical conductivity calculation shows very good quantitative agreement with the experimental data.

preprint2010arXiv

Graphene-based spintronic components

A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of graphene nanoribbons, that nearly +-100% spin-polarized current can be generated in zigzag graphene nanoribbons (ZGNRs) and tuned by a source-drain voltage in the bipolar spin diode, in addition to magnetic configurations of the electrodes. This unusual transport property is attributed to the intrinsic transmission selection rule of the spin subbands near the Fermi level in ZGNRs. The simultaneous control of spin current by the bias voltage and the magnetic configurations of the electrodes provides an opportunity to implement a whole range of spintronics devices. We propose theoretical designs for a complete set of basic spintronic devices, including bipolar spin diode, transistor and logic gates, based on ZGNRs.

preprint2008arXiv

Lateral Size and Thickness Dependence in Ferroelectric Nanostructures Formed by Localized Domain Switching

Ferroelectric nanostructures can be formed by local switching of domains using techniques such as piezo-force microscopy (PFM). Understanding lateral size effects is important to determine the minimum feature size for writing ferroelectric nanostructures. To understand these lateral size effects, we use the time-dependent-Ginzburg-Landau equations to simulate localized switching of domains for a PFM type and parallel-plate capacitor configurations. Our investigations indicate that fringing electric fields lead to switching via 90 deg domain wedge nucleation for thicker films while at smaller thicknesses, the polarization switches directly by 180 deg rotations. The voltage required to switch the domain increases by decreasing the lateral size and at very small lateral sizes the coercive voltage becomes so large that it becomes virtually impossible to switch the domain. In all cases, the width of the switched region extends beyond the electrodes, due to fringing.

preprint2006arXiv

Electronic Structure of Bilayer Graphene: A Real-space Green's Function Study

In this paper, a real-space analytical expression for the free Green's function (propagator) of bilayer graphene is derived based on the effective-mass approximation. Green's function displays highly spatial anisotropy with three-fold rotational symmetry. The calculated local density of states (LDOS) of a perfect bilayer graphene produces the main features of the observed scanning tunneling microscopy (STM) images of graphite at low bias voltage. Some predicted features of the LDOS can be verified by STM measurements. In addition, we also calculate the LDOS of bilayer graphene with vacancies by using the multiple-scattering theory (scatterings are localized around the vacancy of bilayer graphene). We observe that the interference patterns are determined mainly by the intrinsic properties of the propagator and the symmetry of the vacancies.