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Source author record

H. W. Tseng

H. W. Tseng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2013arXiv

Central role of domain wall depinning for perpendicular magnetization switching driven by spin torque from the spin Hall effect

We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching process is domain-wall (DW) depinning by spin Hall torque via a thermally-assisted mechanism that eventually produces full reversal by domain expansion. An in-plane applied magnetic field collinear with the current is required, with the necessary field scale set by the need to overcome DW chirality imposed by the Dzyaloshinskii-Moriya interaction. Once Joule heating is taken into account the switching current density is quantitatively consistent with a spin Hall angle θ$_{SH}$ ${\approx}$ 0.07 for 4 nm of Pt.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin torque switching with the giant spin Hall effect of tantalum

We report a giant spin Hall effect (SHE) in β-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

We report a giant spin Hall effect (SHE) in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |θ|=0.30\pm0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From switching data obtained with such 3-terminal devices we independently determine |θ|=0.33\pm0.06. We also report variation of the spin Hall switching efficiency with W layers of different resistivities and hence of variable (α and β) phase composition.

0 citations0 reviewsNo code linkedOpen access