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H. Q. Ye

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Published work

2 published item(s)

preprint2023arXiv

Magnetic properties of the layered heavy fermion antiferromagnet CePdGa$_6$

We report the magnetic properties of the layered heavy fermion antiferromagnet CePdGa$_{6}$, and their evolution upon tuning with the application of magnetic field and pressure. CePdGa$_{6}$ orders antiferromagnetically below $T\rm_{N}$ = 5.2 K, where there is evidence for heavy fermion behavior from an enhanced Sommerfeld coefficient. Our results are best explained by a magnetic ground state of ferromagnetically coupled layers of Ce $4f$-moments orientated along the $c$-axis, with antiferromagnetic coupling between layers. At low temperatures we observe two metamagnetic transitions for fields applied along the $c$-axis corresponding to spin-flip transitions, where the lower transition is to a different magnetic phase with a magnetization one-third of the saturated value. From our analysis of the magnetic susceptibility, we propose a CEF level scheme which accounts for the Ising anisotropy at low temperatures, and we find that the evolution of the magnetic ground state can be explained considering both antiferromagnetic exchange between nearest neighbor and next nearest neighbor layers, indicating the influence of long-range interactions. Meanwhile we find little change of $T\rm_{N}$ upon applying hydrostatic pressures up to 2.2 GPa, suggesting that significantly higher pressures are required to examine for possible quantum critical behaviors.

preprint2012arXiv

Growth Direction Dependence of the Electron Spin Dynamics in {111} GaAs Quantum Wells

The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the D'yakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices.