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A. Balocchi

A. Balocchi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.optics

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Published work

20 published item(s)

preprint2022arXiv

Optical manipulation of the Rashba effect in germanium quantum wells

The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark effect, a threefold enhancement of the circular polarization degree of the direct transition is obtained by increasing the pump power over a 2kW/cm$^2$ range. This marked variation reflects an efficient modulation of the spin population and is further supported by dedicated investigations of the indirect gap transition. This study demonstrates a viable strategy to engineer the spin-orbit Hamiltonian through contactless optical excitation and opens the way towards the electro-optical manipulation of spins in quantum devices based on group-IV heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Machine learning assisted GaAsN circular polarimeter

We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident light beam. Specifically, we employ a multimodal logistic regression to discriminate the handedness of light and a 6-layer neural network to establish the relationship between the input voltages, the intensity and degree of circular polarization. We have developed a particular neural network training strategy that substantially improves the accuracy of the device. The algorithm was trained and tested on theoretically generated photoconductivity and on photoluminescence experimental results. Even for a small training experimental dataset (70 instances), it is shown that the proposed algorithm correctly predicts linear, right and left circularly polarized light misclassifying less than $1.5\%$ of the cases and attains an accuracy larger than $97\%$ in the vast majority of the predictions ($92\%$) for intensity and degree of circular polarization. These numbers are significantly improved for the larger theoretically generated datasets (4851 instances). The algorithm is versatile enough that it can be easily adjusted to other device configurations where a map needs to be established between the input parameters and the device response. Training and testing data files as well as the algorithm are provided as supplementary material.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga$^{2+}$ centers

Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to most previously presented models. Primarily, these errors manifest themselves as major disagreements with the experimental observations of two key characteristics of this phenomenon: the effective Overhauser-like magnetic field and the width of the photoluminescence Lorentzian-like curves as a function of the illumination power. These features are not only essential to understand the spin dependent recombination in GaAsN, but are also key to the design of novel spintronic devices. Here we demonstrate that the particular structure of the electron capture expressions introduces spurious electron-nucleus correlations that artificially alter the balance between the hyperfine and the Zeeman contributions. This imbalance strongly distorts the effective magnetic field and width characteristics. In this work we propose an alternative recombination mechanism that preserves the electron-nucleus correlations and, at the same time, keeps the essential properties of the spin selective capture of electrons. This mechanism yields a significant improvement to the agreement between experimental and theoretical results. In particular, our model gives results in very good accord with the experimental effective Overhauser-like magnetic field and width data, and with the degree of circular polarization under oblique magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers

We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $τ_{rad}=1.8\pm0.2$ ps that we interpret as the intrinsic radiative recombination time. Similar values are found for WSe2 mono-layers. Our detailed analysis suggests the following scenario: at low temperature (T $\leq$ 50 K), the exciton oscillator strength is so large that the entire light can be emitted before the time required for the establishment of a thermalized exciton distribution. For higher lattice temperatures, the photoluminescence dynamics is characterized by two regimes with very different characteristic times. First the PL intensity drops drastically with a decay time in the range of the picosecond driven by the escape of excitons from the radiative window due to exciton- phonon interactions. Following this first non-thermal regime, a thermalized exciton population is established gradually yielding longer photoluminescence decay times in the nanosecond range. Both the exciton effective radiative recombination and non-radiative recombination channels including exciton-exciton annihilation control the latter. Finally the temperature dependence of the measured exciton and trion dynamics indicates that the two populations are not in thermodynamical equilibrium.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Exciton states in monolayer MoSe2: impact on interband transitions

We combine linear and non-linear optical spectroscopy at 4K with ab initio calculations to study the electronic bandstructure of MoSe2 monolayers. In 1-photon photoluminescence excitation (PLE) and reflectivity we measure a separation between the A- and B-exciton emission of 220 meV. In 2-photon PLE we detect for the A- and B-exciton the 2p state 180meV above the respective 1s state. In second harmonic generation (SHG) spectroscopy we record an enhancement by more than 2 orders of magnitude of the SHG signal at resonances of the charged exciton and the 1s and 2p neutral A- and B-exciton. Our post-Density Functional Theory calculations show in the conduction band along the $K-Γ$ direction a local minimum that is energetically and in k-space close to the global minimum at the K-point. This has a potentially strong impact on the polarization and energy of the excitonic states that govern the interband transitions and marks an important difference to MoS2 and WSe2 monolayers.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electron Spin Dephasing and Optical Pumping of Nuclear Spins in GaN

We have measured the donor-bound electron spin dynamics in cubic GaN by time-resolved Kerr rotation experiments. The ensemble electron spin dephasing time in this quantum dot like system characterized by a Bohr radius of 2.5 nm is of the order of 1.5 ns as a result of the interaction with the fluctuating nuclear spins. It increases drastically when an external magnetic field as small as 10 mT is applied. We extract a dispersion of the nuclear hyperfine field δBn $\sim$ 4 mT, in agreement with calculations. We also demonstrate for the first time in GaN based systems the optical pumping of nuclear spin yielding the build-up of a significant nuclear polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Exciton dynamics in WSe2 bilayers

We investigate exciton dynamics in 2H-WSe2 bilayers in time-resolved photoluminescence (PL) spectroscopy. Fast PL emission times are recorded for both the direct exciton with $τ_{D}$ ~ 3 ps and the indirect optical transition with $τ_{i}$ ~ 25 ps. For temperatures between 4 to 150 K $τ_{i}$ remains constant. Following polarized laser excitation, we observe for the direct exciton transition at the K point of the Brillouin zone efficient optical orientation and alignment during the short emission time $τ_{D}$. The evolution of the direct exciton polarization and intensity as a function of excitation laser energy is monitored in PL excitation (PLE) experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Non-linear Optical Spectroscopy of Excited Exciton States for Efficient Valley Coherence Generation in WSe2 Monolayers

Monolayers (MLs) of MoS2 and WSe2 are 2D semiconductors with strong, direct optical transitions that are governed by tightly Coulomb bound eletron-hole pairs (excitons). The optoelectronic properties of these transition metal dichalcogenides are directly related to the inherent crystal inversion symmetry breaking. It allows for efficient second harmonic generation (SHG) and is at the origin of chiral optical selections rules, which enable efficient optical initialization of electrons in specific K-valleys in momentum space. Here we demonstrate how these unique non-linear and linear optical properties can be combined to efficiently prepare exciton valley coherence and polarization through resonant pumping of an excited exciton state. In particular a new approach to coherent alignment of excitons following two-photon excitation is demonstrated. We observe a clear deviation of the excited exciton spectrum from the standard Rydberg series via resonances in SHG spectroscopy and two- and one-photon absorption. The clear identification of the 2s and 2p exciton excited states combined with first principle calculations including strong anti-screening effects allows us to determine an exciton binding energy of the order of 600 meV in ML WSe2.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2

Optical interband transitions in monolayer transition metal dichalcogenides such as WSe2 and MoS2 are governed by chiral selection rules. This allows efficient optical initialization of an electron in a specific K-valley in momentum space. Here we probe the valley dynamics in monolayer WSe2 by monitoring the emission and polarization dynamics of the well separated neutral excitons (bound electron hole pairs) and charged excitons (trions) in photoluminescence. The neutral exciton photoluminescence intensity decay time is about 4ps, whereas the trion emission occurs over several tens of ps. The trion polarization dynamics shows a partial, fast initial decay within tens of ps before reaching a stable polarization of about 20%, for which a typical valley polarization decay time larger than 1ns can be inferred. This is a clear signature of stable, optically initialized valley polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Fabrication of an InGaAs spin filter by implantation of paramagnetic centers

We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as high as 240% can be achieved in the implanted areas. The optimum implantation conditions for the most efficient SDR is determined by the systematic analysis of different ion doses spanning four orders of magnitude. The application of a weak external magnetic field leads to a sizeable enhancement of the SDR ratio from the spin polarization of the nuclei surrounding the polarized implanted paramagnetic defects.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magnetic Field Effect on Electron Spin Dynamics in (110) GaAs Quantum wells

We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly polarized light and detected by time-resolved Kerr rotation technique. In the asymmetric structure, where a δ-doped layer on one side of the QW produces the Rashba contribution to the conduction-band spin-orbit splitting, the lifetime of electron spins aligned along the growth axis exhibits an anomalous dependence on B in the range 0<B<0.5 T; this results from the interplay between the Dresselhaus and Rashba effective fields which are perpendicular to each other. For larger magnetic fields, the spin lifetime increases, which is the consequence of the cyclotron motion of the electrons and is also observed in (001)-grown quantum wells. The experimental results are in agreement with the calculation of the spin lifetimes in (110)- grown asymmetric quantum wells described by the point group Cs where the growth direction is not the principal axis of the spin-relaxation-rate tensor.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Room temperature optical manipulation of nuclear spin polarization in GaAsN

The effect of hyperfine interaction on the room-temperature defect-enabled spin filtering effect in GaNAs alloys is investigated both experimentally and theoretically through a master equation approach based on the hyperfine and Zeeman interaction between electron and nuclear spin of the spin filtering defect. We show that the nuclear spin polarization can be tuned through the optically induced spin polarization of conduction band electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Growth Direction Dependence of the Electron Spin Dynamics in {111} GaAs Quantum Wells

The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the D'yakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

L-valley Electron Spin Dynamics in GaAs

Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the $Γ$ valley following an energy relaxation of several hundreds of meV. Combining these high energy photo-excitation experiments with time-resolved photoluminescence spectroscopy of $Γ$ valley spin-polarized photogenerated electrons allows us to deduce a typical L valley electron spin relaxation time of 200 fs, in agreement with theoretical calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin noise spectroscopy of donor bound electrons in ZnO

We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nuclear spins of the naturally occurring $^{67}$Zn isotope. We measure a typical spin dephasing time of 23 ns in agreement with the expected theoretical values. On the other hand, we measure a third, very high spin dephasing rate which is attributed to a high defect density of the investigated ZnO material. Measurements of the spin dynamics under the influence of transverse as well as longitudinal external magnetic fields unambiguously reveal the intriguing connections of the electron spin with its nuclear and structural environment.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots

In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced \pm 3/2 heavy-hole mixing, an inherent property of systems with C_3v point-group symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells

The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots

We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation we evidence the quenching of the exciton spin relaxation and a temperature insensitive degree of the exciton linear polarization, demonstrating the robustness of the optical alignment of the exciton spin in these nanowire embedded QDs. A detailed examination of the luminescence polarization angular dependence shows orthogonal linear exciton eigenstates with no preferential crystallographic orientation.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor

A theoretical and experimental study of the spin-dependent photoconductivity in dilute Nitride GaAsN is presented. The non linear transport model we develop here is based on the rate equations for electrons, holes, deep paramagnetic and non paramagnetic centers both under CW and pulsed optical excitation. Emphasis is given to the effect of the competition between paramagnetic centers and non paramagnetic centers which allows us to reproduce the measured characteristics of the spin-dependent recombination power dependence. Particular attention is paid to the role of an external magnetic field in Voigt geometry. The photoconductivity exhibits a Hanle-type curve whereas the spin polarization of electrons shows two superimposed Lorentzian curves with different widths, respectively related to the recombination of free and trapped electrons. The model is capable of reproducing qualitatively and quantitatively the most important features of photoluminescence and photocurrent experiments and is helpful in providing insight on the various mechanisms involved in the electron spin polarization and filtering in GaAsN semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a non-magnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a Giant Spin-dependent Photoconductivity (GSP) reaching up to 40 % without the need of an external magnetic field. We show that the GSP is due to a very efficient spin filtering effect of conduction band electrons on Nitrogen-induced Ga self-interstitial deep paramagnetic centers.

0 citations0 reviewsNo code linkedOpen access