Source author record

H. -M. Weng

H. -M. Weng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

Catalog footprint

What is connected

3works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2016arXiv

Emergence of topological bands on the surface of ZrSnTe crystal

By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though such a TI state is defined with a curved Fermi level instead of a global band gap. Furthermore, we find that by modifying the dangling bonds on the surface through hydrogenation, this 2D band structure can be manipulated so that the expected global energy gap is most likely to be realized. This facilitates the practical applications of 2D TI in heterostructural devices and those with surface decoration and coverage. Since ZrSnTe belongs to a large family of compounds having the similar crystal and band structures, our findings shed light on identifying more 2D TI candidates and superconductor-TI heterojunctions supporting topological superconductors.

preprint2016arXiv

Experimental evidence of large-gap two-dimensional topological insulator on the surface of ZrTe5

Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap 2D TI candidates, only few of them have been experimentally verified. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that the top monolayer of ZrTe5 crystals hosts a large band gap of ~100 meV on the surface and a finite constant density-of-states within the gap at the step edge. Our first-principles calculations confirm the topologically nontrivial nature of the edge states. These results demonstrate that the top monolayer of ZrTe5 crystals is a large-gap 2D TI suitable for topotronic applications at high temperature.

preprint2014arXiv

Direct observation of the spin texture in strongly correlated SmB6 as evidence of the topological Kondo insulator

The concept of a topological Kondo insulator (TKI) has been brought forward as a new class of topological insulators in which non-trivial surface states reside in the bulk Kondo band gap at low temperature due to the strong spin-orbit coupling [1-3]. In contrast to other three-dimensional (3D) topological insulators (e.g. Bi2Se3), a TKI is truly insulating in the bulk [4]. Furthermore, strong electron correlations are present in the system, which may interact with the novel topological phase. Applying spin- and angle-resolved photoemission spectroscopy (SARPES) to the Kondo insulator SmB6, a promising TKI candidate, we reveal that the surface states of SmB6 are spin polarized, and the spin is locked to the crystal momentum. Counter-propagating states (i.e. at k and -k) have opposite spin polarizations protected by time-reversal symmetry. Together with the odd number of Fermi surfaces of surface states between the 4 time-reversal invariant momenta in the surface Brillouin zone [5], these findings prove, for the first time, that SmB6 can host non-trivial topological surface states in a full insulating gap in the bulk stemming from the Kondo effect. Hence our experimental results establish that SmB6 is the first realization of a 3D TKI. It can also serve as an ideal platform for the systematic study of the interplay between novel topological quantum states with emergent effects and competing order induced by strongly correlated electrons.