Researcher profile

H. J. Im

H. J. Im contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2015arXiv

Electronic structure of Mott-insulator CaCu3Ti4O12: Photoemission and inverse photoemission study

We have performed the photoemission and inverse photoemission experiments to elucidate the origin of Mott insulating states in A-site ordered perovskite CaCu$_3$Ti$_4$O$_{12}$ (CCTO). Experimental results have revealed that Cu 3$d$-O 2$p$ hybridized bands, which are located around the Fermi level in the prediction of the local-density approximation (LDA) band calculations, are actually separated into the upper Hubbard band at $\sim$ 1.5 eV and the lower Hubbard band at $\sim$ $-$1.7 eV with a band gap of $\sim$ 1.5-1.8 eV. We also observed that Cu 3$d$ peak at $\sim$ $-$3.8 eV and Ti 3$d$ peak at $\sim$ 3.8 eV are further away from each other than as indicated in the LDA calculations. In addition, it is found that the multiplet strucutre around $-$9 eV includes a considerable number of O 2$p$ states. These observations indicate that the Cu 3$d$ and Ti 3$d$ electrons hybridized with the O 2$p$ states are strongly correlated, which originates in the Mott-insulating states of CCTO.

preprint2014arXiv

Fermi Surface Variation of Ce 4f-electrons in Hybridization Controlled Heavy-Fermion Systems

Ce 3d-4f resonant angle-resolved photoemission measurements on CeCoGe$_{1.2}$Si$_{0.8}$ and CeCoSi$_{2}$ have been performed to understand the Fermi surface topology as a function of hybridization strength between Ce 4$f$- and conduction electrons in heavy-fermion systems. We directly observe that the hole-like Ce 4$f$-Fermi surfaces of CeCoSi$_{2}$ is smaller than that of CeCoGe$_{1.2}$Si$_{0.8}$, indicating the evolution of the Ce 4$f$-Fermi surface with the increase of the hybridization strength. In comparision with LDA calculation, the Fermi surface variation cannot be understood even though the overall electronic structure are roughly explained, indicating the importance of strong correlation effects. We also discuss the relation between the Ce 4$f$-Fermi surface variation and the Kondo peaks.

preprint2013arXiv

Strong Correlation Effects of A-site Ordered Perovskite CaCu3Ti4O12 revealed by Angle-Resolved Photoemission Spectroscopy

We report angle-resolved photoemission spectroscopy (ARPES) results of A-site ordered perovskite CaCu$_3$Ti$_4$O$_{12}$. We have observed the clear band dispersions, which are shifted to the higher energy by 1.7 eV and show the band narrowing around 2 eV in comparison with the local density approximation calculations. In addition, the high energy multiplet structures of Cu 3$d^8$ final-states have been found around 8 - 13 eV. These results reveal that CaCu$_3$Ti$_4$O$_{12}$ is a Mott-type insulator caused by the strong correlation effects of the Cu 3$d$ electrons well hybridized with O 2$p$ states. Unexpectedly, there exist a very small spectral weight at the Fermi level in the insulator phase, indicating the existence of isolated metallic states.

preprint2009arXiv

Crystalline electric field effects in Ce 3$d$ core-level spectra of heavy-fermion systems: Hard X-ray photoemission spectroscopy on CeNi$_{1-x}$Co$_x$Ge$_2$

High-resolution hard X-ray photoemission measurements have been performed to clarify the electronic structure originating from the strong correlation between electrons in bulk Ce 3$d$ core-level spectra of CeNi$_{1-x}$Co$_x$Ge$_2$ (0 $\leq$ $x$ $\leq$ 1). In the Ce 3$d_{5/2}$ core-level spectra, the variation of satellite structures ($f^2$ peaks) shows that the hybridization strength between Ce 4$f$- and conduction electrons gradually increases with Co concentration in good agreement with the results of Ce 3$d-4f$ and 4$d-4f$ resonant photoemission spectroscopies. Particularly, in Ce 3$d_{3/2}$ core-level spectra, the multiplet structures of $f^1$ peaks systematically change with the degeneracy of $f$-states which originates from crystalline electric field effects.