Researcher profile

Guy Allan

Guy Allan contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2011arXiv

Theoretical characterization of the electronic properties of extended thienylenevinylene oligomers

We present semiempirical tight binding calculations on thienylenevinylene oligomers up to the hexadecamer stage (n=16) and ab initio calculations based on the local density approximation up to n=8. The results correctly describe the experimental variations of the gap versus size, the optical spectra, and the electrochemical redox potentials. We propose a simple model to deduce from the band structure of the polymer chain the electronic states of the oligomers close to the gap. We analyze the evolution of the gap as a function of the torsion angle between consecutive cells: the modifications are found to be small up to a ~30^{\circ}; angle. We show that these oligomers possess extensive pi-electron delocalization along the molecular backbone which makes them interesting for future electronic applications such as molecular wires.

preprint2011arXiv

Tight binding description of the electronic response of a molecular device to an applied voltage

We analyze the effect of an external electric field on the electronic structure of molecules which have been recently studied as molecular wires or diodes. We use a self-consistent tight binding technique which provides results in good agreement with ab initio calculations and which may be applied to a large number of molecules. The voltage dependence of the molecular levels is mainly linear with slopes intimately related to the electronic structure of the molecules. We emphasize that the response to the applied voltage is an important feature which governs the behavior of a molecular device.

preprint2009arXiv

Near Kohn anomalies in the phonon dispersion relations of lead chalcogenides

We present ab-initio phonon dispersion relations for the three lead chalcogenides PbS, PbSe, and PbTe. The acoustic branches are in very good agreement with inelastic neutron-scattering data and calculations of the specific heat give good agreement with experimental data. The pronounced minimum of the transverse optical branch at Gamma due to the near-ferroelectricity of the lead chalcogenides is qualitatively reproduced. In addition, we find a pronounced dip in the longitudinal optical branch at Gamma. This dip was previously explained as the effect of "free carriers" (due to the presence of impurities). The calculations demonstrate that it persists also in the case of pure lead chalcogenides. We explain the dip as a "near Kohn anomaly" which is associated with the small electronic band-gap at the high-symmetry point L.

preprint2003arXiv

Molecular rectifying diodes from self-assembly on silicon

We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show that rectification occurs from resonance through the highest occupied molecular orbital of the p-group in good agreement with our calculations and internal photoemission spectroscopy. This approach allows us to fabricate molecular rectifying diodes compatible with silicon nanotechnologies for future hybrid circuitries.