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Guozhen Zhang

Guozhen Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2026arXiv

Video Generation Models Are Good Latent Reward Models

Reward feedback learning (ReFL) has proven effective for aligning image generation with human preferences. However, its extension to video generation faces significant challenges. Existing video reward models rely on vision-language models designed for pixel-space inputs, confining ReFL optimization to near-complete denoising steps after computationally expensive VAE decoding. This pixel-space approach incurs substantial memory overhead and increased training time, and its late-stage optimization lacks early-stage supervision, refining only visual quality rather than fundamental motion dynamics and structural coherence. In this work, we show that pre-trained video generation models are naturally suited for reward modeling in the noisy latent space, as they are explicitly designed to process noisy latent representations at arbitrary timesteps and inherently preserve temporal information through their sequential modeling capabilities. Accordingly, we propose Process Reward Feedback Learning~(PRFL), a framework that conducts preference optimization entirely in latent space, enabling efficient gradient backpropagation throughout the full denoising chain without VAE decoding. Extensive experiments demonstrate that PRFL significantly improves alignment with human preferences, while achieving substantial reductions in memory consumption and training time compared to RGB ReFL.

preprint2020arXiv

Atomic origin for hydrogenation promoted bulk oxygen vacancies removal in vanadium dioxide

Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crystal, the pre-existing VO is always removed via careful post-annealing treatment at high temperature in air or oxygen atmosphere. However, the annealing conditions is difficult to control and the removal of VO in bulk phase is restrained due to high energy barrier of VO migration. Here, we selected VO2 crystal film as the model system and developed an alternative annealing treatment aided by controllable hydrogen doping, which can realizes effective removal of VO defects in VO2-δ crystal at lower temperature. This finding is attributed to the hydrogenation accelerated oxygen vacancies recovery in VO2-δ crystal. Theoretical calculations revealed that the H-doping induced electrons are prone to accumulate around the oxygen defects in VO2-δ film, which facilitates the diffusion of VO and thus makes it easier to be removed. The methodology is expected to be applied to other metal oxides for oxygen-related point defects control.