BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Chongwen Zou

Chongwen Zou appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.app-phphysics.opticsquant-ph

Catalog footprint

What is connected

4works
6topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2020arXiv

Atomic origin for hydrogenation promoted bulk oxygen vacancies removal in vanadium dioxide

Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crystal, the pre-existing VO is always removed via careful post-annealing treatment at high temperature in air or oxygen atmosphere. However, the annealing conditions is difficult to control and the removal of VO in bulk phase is restrained due to high energy barrier of VO migration. Here, we selected VO2 crystal film as the model system and developed an alternative annealing treatment aided by controllable hydrogen doping, which can realizes effective removal of VO defects in VO2-δ crystal at lower temperature. This finding is attributed to the hydrogenation accelerated oxygen vacancies recovery in VO2-δ crystal. Theoretical calculations revealed that the H-doping induced electrons are prone to accumulate around the oxygen defects in VO2-δ film, which facilitates the diffusion of VO and thus makes it easier to be removed. The methodology is expected to be applied to other metal oxides for oxygen-related point defects control.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spectral self-adaptive absorber/emitter for harvesting energy from the sun and outer space

The sun (~6000 K) and outer space (~3 K) are the original heat source and sink for human beings on Earth. The energy applications of absorbing solar irradiation and harvesting the coldness of outer space for energy utilization have attracted considerable interest from researchers. However, combining these two functions in a static device for continuous energy harvesting is unachievable due to the intrinsic infrared spectral conflict. In this study, we developed spectral self-adaptive absorber/emitter (SSA/E) for daytime photothermal and nighttime radiative sky cooling modes depending on the phase transition of the vanadium dioxide coated layer. A 24-hour day-night test showed that the fabricated SSA/E has continuous energy harvesting ability and improved overall energy utilization performance, thus showing remarkable potential in future energy applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Visualizing an adjustable WO3/p-GaN heterojunction

The p-n junctions based on typical semiconductors are the elementary units for the modern electronic devices and chip industry. While the rectification property of those p-n junction is usually fixed once the unit is fabricated. Here, we proposed an adjustable n-WO3/p-GaN heterojunction with controllable electronic properties. For the prepared n-WO3/p-GaN heterojunction, it is almost transparent and shows typical p-n junction rectification. While if gradually doping some hydrogen atoms into WO3 layer by a facile electron-proton synergistic route, the heterojunction can be turned dynamically from the typical p-n junction (n-WO3/p-GaN) to standard Schottky contact (HxWO3/p-GaN) step by step. More importantly, this evolution can be directly visualized by eyesight due to the pronounced electrochromic characteristic of WO3 layer. By connecting two HxWO3/p-GaN heterojunctions, the controllable bi-functional rectification can be achieved. In addition, the HxWO3/p-GaN heterojunction can recovered to the original p-n jucntion just by annealing at ambient, demonstrating the heterojunction is controllable and reusable. The current study will open up tremendous opportunities for dynamic electronic devices in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High-Sensitivity Temperature Sensing Using an Implanted Single Nitrogen-Vacancy Center Array in Diamond

We presented a high-sensitivity temperature detection using an implanted single Nitrogen-Vacancy center array in diamond. The high-order Thermal Carr-Purcell-Meiboom-Gill (TCPMG) method was performed on the implanted single nitrogen vacancy (NV) center in diamond in a static magnetic field. We demonstrated that under small detunings for the two driving microwave frequencies, the oscillation frequency of the induced fluorescence of the NV center equals approximately to the average of the detunings of the two driving fields. On basis of the conclusion, the zero-field splitting D for the NV center and the corresponding temperature could be determined. The experiment showed that the coherence time for the high-order TCPMG was effectively extended, particularly up to 108 μs for TCPMG-8, about 14 times of the value 7.7 μs for thermal Ramsey method. This coherence time corresponded to a thermal sensitivity of 10.1 mK/Hz1/2. We also detected the temperature distribution on the surface of a diamond chip in three different circumstances by using the implanted NV center array with the TCPMG-3 method. The experiment implies the feasibility for using implanted NV centers in high-quality diamonds to detect temperatures in biology, chemistry, material science and microelectronic system with high-sensitivity and nanoscale resolution.

0 citations0 reviewsNo code linkedOpen access