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Guopeng Wang

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el math.RT quant-ph

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preprint2025arXiv

Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet

Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting antiferromagnetic (AFM) compounds instead. Here, we report all-collinear AFM tunnel junctions (AFMTJs) fabricated with van der Waals A-type AFM metal (Fe0.6Co0.4)5GeTe2 (FCGT) electrodes and nonmagnetic semiconducting WSe2 tunnel barriers. The AFMTJ heterostructure device achieves a tunneling magnetoresistance (TMR) ratio of up to 75% in response to magnetic field switching. Our results demonstrate that the TMR exclusively emerges in the AFM state of FCGT, rather than during the AFM-to-FM transition. By engineering FCGT electrodes with either even- or odd-layer configurations, volatile or non-volatile TMR could be selected, consistent with an entirely interfacial effect. TMR in the even-layer devices arose by Néel vector switching. In the odd-layer devices, TMR stemmed from interfacial spin-flipping. Experimental and theoretical analyses reveal a new TMR mechanism associated with interface-driven spin-polarized transport, despite the spin-independent nature of bulk FCGT. Our work demonstrates that collinear AFMTJs can provide comparable performance to conventional MTJs and introduces a new paradigm for AFM spintronics, in which the spin-dependent properties of AFM interfaces are harnessed.

preprint2022arXiv

Layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr

Magnetic van der Waals (vdW) materials offer a fantastic platform to investigate and exploit rich spin configurations stabilized in reduced dimensions. One tantalizing magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal a pronounced odd-even layer effect of interlayer reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic reorientation engineered by magnetic field in the air-stable semiconductor, which could contribute to future vdW spintronic devices.

preprint2011arXiv

Tilting modules over duplicated algebras

Let $A$ be a finite dimensional hereditary algebra over a field $k$ and $A^{(1)}$ the duplicated algebra of $A$. We first show that the global dimension of endomorphism ring of tilting modules of $A^{(1)}$ is at most 3. Then we investigate embedding tilting quiver $\mathscr{K}(A)$ of $A$ into tilting quiver $\mathscr{K}(A^{(1)})$ of $A^{(1)}$. As applications, we give new proofs for some results of D.Happel and L.Unger, and prove that every connected component in $\mathscr{K}({A})$ has finite non-saturated points if $A$ is tame type, which gives a partially positive answer to the conjecture of D.Happel and L.Unger in [10]. Finally, we also prove that the number of arrows in $\mathscr{K}({A})$ is a constant which does not depend on the orientation of $Q$ if $Q$ is Dynkin type.