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Guenter Schneider

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el physics.comp-ph

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preprint2014arXiv

Band alignment and directional stability in abrupt and polar-compensated Si/ZnS interface calculations

We perform a first principles investigation of Si/ZnS interface properties for the [111], [100], and [110] directions, including single-substitution polar-compensated interfaces. The asymmetry of general interface directions poses known challenges for standard methods of calculation: a multiplicity of interface distinctions, artificial electric fields, and indeterminacy of orientation stability. By placing each distinct interface in a variety of supercell environments, we demonstrate that the spread of both band offsets and interface enthalpies is acceptably small for reasonable cell lengths, removing the need for corrections involving inappropriate assumptions or computationally expensive structures. Both the orientation and the ionic character of abrupt (111) zinc blende interfaces are shown to affect band alignment and interface enthalpy. We find that the band offsets for the compensated and abrupt (111) and (100) interfaces lie on a strongly bimodal distribution of total width greater than 1.2 eV, while the (110) band offset lies near the distribution midpoint. The midpoint agrees with previous experiments on (100) interfaces, but only one peak of the distribution agrees with (111) interface experiments, indicating that the grown macroscopic (111) interfaces had significant selectivity among the possible microscopic interfaces. The polar-compensated interfaces are shown to be more stable than the corresponding abrupt interfaces over most growth conditions.

preprint2013arXiv

Multiscale modeling of solar cells with interface phenomena

We describe a mathematical model for heterojunctions in semiconductors which can be used, e.g., for modeling higher efficiency solar cells. The continuum model involves well-known drift-diffusion equations posed away from the interface. These are coupled with interface conditions with a nonhomogeneous jump for the potential, and Robin-like interface conditions for carrier transport. The interface conditions arise from approximating the interface region by a lower-dimensional manifold. The data for the interface conditions are calculated by a Density Functional Theory (DFT) model over a few atomic layers comprising the interface region. We propose a domain decomposition method (DDM) approach to decouple the continuum model on subdomains which is implemented in every step of the Gummel iteration. We show results for CIGS/CdS, Si/ZnS, and Si/GaAs heterojunctions.

preprint2013arXiv

Shell Model of BaTiO3 Derived from Ab-initio Total Energy Calculations

A shell model for ferroelectric perovskites fitted to results of first-principles density functional theory (DFT) calculations is strongly affected by approximations made in the exchange-correlation functional within DFT, and in general not as accurate as a shell model derived from experimental data. We have developed an isotropic shell model for BaTiO3 based on the PBEsol exchange-correlation functional, which was specifically designed for crystal properties of solids. Our shell model for BaTiO3 agrees with groundstate DFT properties and the experimental lattice constants at finite temperatures. The sequence of phases of BaTiO3 (rhombohedral, orthorhombic, tetragonal, cubic) is correctly reproduced but the temperature scale of the phase transitions is compressed. The temperature scale can be improved by scaling of the ab-initio energy surface.

preprint2010arXiv

Conductance of correlated systems: real-time dynamics in finite systems

Numerical time evolution of transport states using time dependent Density Matrix Renormalization Group (td-DMRG) methods has turned out to be a powerful tool to calculate the linear and finite bias conductance of interacting impurity systems coupled to non-interacting one-dimensional leads. Several models, including the Interacting Resonant Level Model (IRLM), the Single Impurity Anderson Model (SIAM), as well as models with different multi site structures, have been subject of investigations in this context. In this work we give an overview of the different numerical approaches that have been successfully applied to the problem and go into considerable detail when we comment on the techniques that have been used to obtain the full I--V-characteristics for the IRLM. Using a model of spinless fermions consisting of an extended interacting nanostructure attached to non-interacting leads, we explain the method we use to obtain the current--voltage characteristics and discuss the finite size effects that have to be taken into account. We report results for the linear and finite bias conductance through a seven site structure with weak and strong nearest-neighbor interactions. Comparison with exact diagonalisation results in the non-interacting limit serve as a verification of the accuracy of our approach. Finally we discuss the possibility of effectively enlarging the finite system by applying damped boundaries and give an estimate of the effective system size and accuracy that can be expected in this case.