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Researcher profile

Malgorzata Peszynska

Malgorzata Peszynska contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
math.NAphysics.comp-phCell Behaviorcond-mat.mes-hallnlin.AONumerical Analysisphysics.flu-dyn

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Published work

4 published item(s)

preprint2020arXiv

Numerical Analysis of a Parabolic Variational Inequality System Modeling Biofilm Growth at the Porescale

In this paper we consider a system of two coupled nonlinear diffusion--reaction partial differential equations (PDEs) which model the growth of biofilm and consumption of the nutrient. At the scale of interest the biofilm density is subject to a pointwise constraint, thus the biofilm PDE is framed as a parabolic variational inequality. We derive rigorous error estimates for a finite element (FE) approximation to the coupled nonlinear system and confirm experimentally that the numerical approximation converges at the predicted rate. We also show simulations in which we track the free boundary in the domains which resemble the pore scale geometry and in which we test the different modeling assumptions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Biofilm growth in porous media: experiments, computational modeling at the porescale, and upscaling

Biofilm growth changes many physical properties of porous media such as porosity, permeability and mass transport parameters. The growth depends on various environmental conditions, and in particular, on flow rates. Modeling the evolution of such properties is difficult both at the porescale where the phase morphology can be distinguished, as well as during upscaling to the corescale effective properties. Experimental data on biofilm growth is also limited because its collection can interfere with the growth, while imaging itself presents challenges. In this paper we combine insight from imaging, experiments, and numerical simulations and visualization. The experimental dataset is based on glass beads domain inoculated by biomass which is subjected to various flow conditions promoting the growth of biomass and the appearance of a biofilm phase. The domain is imaged and the imaging data is used directly by a computational model for flow and transport. The results of the computational flow model are upscaled to produce conductivities which compare well with the experimentally obtained hydraulic properties of the medium. The flow model is also coupled to a newly developed biomass--nutrient growth model, and the model reproduces morphologies qualitatively similar to those observed in the experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Domain Decomposition for Heterojunction Problems in Semiconductors

We present a domain decomposition approach for the simulation of charge transport in heterojunction semiconductors. The problem is characterized by a large variation of primary variables across an interface region of a size much smaller than the device scale, and requires a multiscale approach in which that region is modeled as an internal boundary. The model combines drift diffusion equations on subdomains coupled by thermionic emission heterojunction model on the interface which involves a nonhomogeneous jump computed at fine scale with Density Functional Theory. Our full domain decomposition approach extends our previous work for the potential equation only, and we present perspectives on its HPC implementation. The model can be used, e.g., for the design of higher efficiency solar cells for which experimental results are not available. More generally, our algorithm is naturally parallelizable and is a new domain decomposition paradigm for problems with multiscale phenomena associated with internal interfaces and/or boundary layers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Multiscale modeling of solar cells with interface phenomena

We describe a mathematical model for heterojunctions in semiconductors which can be used, e.g., for modeling higher efficiency solar cells. The continuum model involves well-known drift-diffusion equations posed away from the interface. These are coupled with interface conditions with a nonhomogeneous jump for the potential, and Robin-like interface conditions for carrier transport. The interface conditions arise from approximating the interface region by a lower-dimensional manifold. The data for the interface conditions are calculated by a Density Functional Theory (DFT) model over a few atomic layers comprising the interface region. We propose a domain decomposition method (DDM) approach to decouple the continuum model on subdomains which is implemented in every step of the Gummel iteration. We show results for CIGS/CdS, Si/ZnS, and Si/GaAs heterojunctions.

0 citations0 reviewsNo code linkedOpen access