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Source author record

Greg Calusine

Greg Calusine appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.optics

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Published work

5 published item(s)

preprint2019arXiv

Microwave Packaging for Superconducting Qubits

Over the past two decades, the performance of superconducting quantum circuits has tremendously improved. The progress of superconducting qubits enabled a new industry branch to emerge from global technology enterprises to quantum computing startups. Here, an overview of superconducting quantum circuit microwave control is presented. Furthermore, we discuss one of the persistent engineering challenges in the field, how to control the electromagnetic environment of increasingly complex superconducting circuits such that they are simultaneously protected and efficiently controllable.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Cavity-enhanced measurements of defect spins in silicon carbide

The identification of new solid-state defect qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color center defect spin ensembles in order to increase measured photoluminescence signal count rates, optically detected magnetic resonance signal intensities, and optical spin initialization rates. We observe up to a factor of 30 increase in the photoluminescence and ODMR signals from Ky5 color centers excited by cavity resonant excitation and increase the rate of ground-state spin initialization by approximately a factor of two. Furthermore, we show that the small excitation mode volume and enhanced excitation and collection efficiencies provided by the structures can be used to study inhomogeneous broadening in defect qubit ensembles. These results highlight some of the benefits that nanofabricated devices offer for engineering the local photonic environment of color center defect qubits to enable applications in quantum information and sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers

The recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications. Here we demonstrate the design, fabrication, and characterization of photonic crystal cavities in 3C SiC films with incorporated ensembles of color centers and quality factor (Q) to mode volume ratios similar to those achieved in diamond. Simulations show that optimized H1 and L3 structures exhibit Q as high as 45,000 and mode volumes of approximately $(λ/n)^{3}$. We utilize the internal color centers as a source of broadband excitation to characterize fabricated structures with resonances tuned to the color center zero phonon line and observe Q in the range of 900-1,500 with narrowband photoluminescence collection enhanced by up to a factor of 10. By comparing the Q factors observed for different geometries with finite-difference time-domain simulations, we find evidence that nonvertical sidewalls are likely the dominant source of discrepancies between our simulated and measured Q factors. These results indicate that defect qubits in 3C SiC thin films show clear promise as a simple, scalable platform for interfacing defect qubits with photonic, optoelectronic, and optomechanical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrically and mechanically tunable electron spins in silicon carbide color centers

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15-36%. These results establish SiC color centers as compelling systems for sensing nanoscale fields.

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preprint2013arXiv

Polytype control of spin qubits in silicon carbide

Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials driven approach that could ultimately lead to "designer" spins with tailored properties. Here, we show that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states, including spins in all three with room-temperature quantum coherence. The prevalence of this spin coherence shows that crystal polymorphism can be a degree of freedom for engineering spin qubits. Long spin coherence times allow us to use double electron-electron resonance to measure magnetic dipole interactions between spin ensembles in inequivalent lattice sites of the same crystal. Together with the distinct optical and spin transition energies of such inequivalent spins, these interactions provide a route to dipole-coupled networks of separately addressable spins.

0 citations0 reviewsNo code linkedOpen access