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Giuseppe Iannaccone

Giuseppe Iannaccone appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.softeess.SYphysics.app-phSystems and Control

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Published work

26 published item(s)

preprint2022arXiv

A 0.6V$-$1.8V Compact Temperature Sensor with 0.24°C Resolution, $\pm$1.4°C Inaccuracy and 1.06nJ per Conversion

This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit to convert the local temperature into two biasing currents. These are then used to define two oscillation frequencies, whose ratio is proportional to absolute-temperature. Finally, the sensor back-end translates such frequency ratio into the digital temperature code. Thanks to its low-complexity architecture, the proposed design achieves a very compact footprint along with low-power consumption and high accuracy in a wide temperature range. Moreover, thanks to a simple embedded line regulation mechanism, our sensor supports voltage-scalability. The design was prototyped in a 180nm CMOS technology with a 0°C $-$ 100°C temperature detection range, a very wide supply voltage operating range from 0.6V up to 1.8V and very small silicon area occupation of just 0.021$mm^2$. Experimental measurements performed on 20 test chips have shown very competitive figures of merit, including a resolution of 0.24°C, an inaccuracy of $\pm$1.4°C, a sampling rate of about 1.5kHz and an energy per conversion of 1.06nJ at 30°C.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Vertical Heterostructures between Transition-Metal Dichalcogenides -- A Theoretical Analysis of the NbS$_2$/WSe$_2$ junction

Low-dimensional metal-semiconductor vertical heterostructures (VH) are promising candidates in the search of electronic devices at the extreme limits of miniaturization. Within this line of research, here we present a theoretical/computational study of the NbS$_2$/WSe$_2$ metal-semiconductor vertical hetero-junction using density functional theory (DFT) and conductance simulations. We first construct atomistic models of the NbS$_2$/WSe$_2$ VH considering all the five possible stacking orientations at the interface, and we conduct DFT and quantum-mechanical (QM) scattering simulations to obtain information on band structure and transmission coefficients. We then carry out an analysis of the QM results in terms of electrostatic potential, fragment decomposition, and band alignment. The behavior of transmission expected from this analysis is in excellent agreement with, and thus fully rationalizes, the DFT results, and the peculiar double-peak profile of transmission. Finally, we use maximally localized Wannier functions, projected density of states (PDOS), and a simple analytic formula to predict and explain quantitatively the differences in transport in the case of epitaxial misorientation. Within the class of Transition-Metal Dichalcogenide systems, the NbS$_2$/WSe$_2$ vertical heterostructure exhibits a wide interval of finite transmission and a double-peak profile, features that could be exploited in applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Flexible One-Dimensional Metal-Insulator-Graphene Diode

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source

The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer stacking can give rise to steep transitions in the density of states (DOS) of the 2D material, that can eventually be used to achieve sub-60 mV/decade subthreshold swing in LH-FETs thanks to an energy-filtering source. We have observed this effect in the case of a PdS2 LH-FET due to the particular density of states of its bilayer configuration. Our results are based on ab initio and multiscale materials and device modeling, and incite the exploration of the 2D-material design space in order to find more abrupt DOS transitions and better suitable candidates.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Theoretical Analysis of a Two-Dimensional Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface

We report a first-principle theoretical study of a monolayer-thick lateral heterostructure (LH) joining two different transition metal dichalcogenides (TMDC): NbS2 and WSe2. The NbS2//WSe2 LH can be considered a prototypical example of a conducting(NbS2)/semiconducting(WSe2) two-dimensional (2D) hybrid heterojunction. We first generate and validate realistic atomistic models of the NbS2//WSe2 LH, derive their band structure and subject it to a fragment decomposition and electrostatic potential analysis to extract a simple but quantitative model of this interfacial system. Stoichiometric fluctuations models are also investigated and found not to alter the qualitative picture. We then conduct electron transport simulations analyze them via band alignment analysis. We conclude that the NbS2//WSe2 LH appears as a robust seamless in-plane 2D modular junction for potential use in opto-electronic devices going beyond the present miniaturization technology.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Performance of arsenene and antimonene double-gate MOSFETs from first principles

In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as channels. The accuracy of first-principles approaches in describing electronic properties is combined with the efficiency of tight-binding Hamiltonians based on maximally-localised Wannier functions to compute the transport properties of the devices. These simulations provide for the first time estimates on the upper limits for the electron and hole mobilities in the Takagi's approximation, including spin-orbit and multi-valley effects, and demonstrate that ultra-scaled devices in the sub-10 nm scale show a performance that is compliant with industry requirements.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Heterojunction Hybrid Devices from Vapor Phase Grown MoS$_{2}$

We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS$_{2}$ layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS$_{2}$. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling

We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure. Results are obtained from quantum transport simulations based on Non-Equilibrium Green's functions with a tight-binding atomistic Hamiltonian. Interband tunneling is extremely sensitive to the longitudinal electric field, to the nanowire cross section, through the gap, and to the material. We have derived an approximate analytical expression for the transmission probability based on WKB theory and on a proper choice of the effective interband tunneling mass, which shows good agreement with results from atomistic quantum simulation.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Tunneling properties of vertical heterostructures of multilayer hexagonal boron nitride and graphene

We use first-principle density functional theory (DFT) to study the transport properties of single and double barrier heterostructures realized by stacking multilayer h-BN or BC$_{2}$N, and graphene films between graphite leads. The heterostructures are lattice matched. The considered single barrier systems consist of layers of up to five h-BN or BC$_{2}$N monoatomic layers (Bernal stacking) between graphite electrodes. The transmission probability of an h-BN barrier exhibits two unusual behaviors: it is very low also in a classically allowed energy region, due to a crystal momentum mismatch between states in graphite and in the dielectric layer, and it is only weakly dependent on energy in the h-BN gap, because the imaginary part of the crystal momentum of h-BN is almost independent of energy. The double barrier structures consist of h-BN films separated by up to three graphene layers. We show that already five layers of h-BN strongly suppress the transmission between graphite leads, and that resonant tunneling cannot be observed because the energy dispersion relation cannot be decoupled in a vertical and a transversal component.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A Backscattering Model Incorporating the Effective Carrier Temperature in Nano MOSFET

In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the same authors which highlighted the importance of considering the partially ballistic transport between the source contact and the top of the potential energy barrier in the channel. The increase of carrier temperature is precisely due to energy dissipation between the source contact and the top of the barrier caused by the high saturation current. To support our discussion, accurate 2D full band Monte Carlo device simulations with quantum correction have been performed in double gate nMOSFETs for different geometries (gate length down to 10 nm), biases and lattice temperatures. Including the effective carrier temperature is especially important to properly treat the high inversion regime, where previous backscattering models usually fail.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Atomistic investigation of low-field mobility in graphene nanoribbons

We have investigated the main scattering mechanisms affecting mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects, and ionized impurities, and we have defined a methodology based on simulations of statistically meaningful ensembles of nanoribbon segments. Edge disorder heavily affects mobility at room temperature in narrower nanoribbons, whereas charged impurities and phonons are hardly the limiting factors. Results are favorably compared to the few experiments available in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations

We present numerical simulations of high field transport in both suspended and deposited armchair graphene nanoribbon (A-GNR) on HfO2 substrate. Drift velocity in suspended GNR does not saturate at high electric field (F), but rather decreases, showing a maximum for F=10 kV/cm. Deposition on HfO2 strongly degrades the drift velocity by up to a factor of 10 with respect to suspended GNRs in the low-field regime, whereas at high fields drift velocity approaches the intrinsic value expected in suspended GNRs. Even in the assumption of perfect edges, the obtained mobility is far behind what expected in two-dimensional graphene, and is further reduced by surface optical phonons.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering

We investigate the low-field phonon-limited mobility in armchair graphene nanoribbons (GNRs) using full-band electron and phonon dispersion relations. We show that lateral confinement suppresses the intrinsic mobility of GNRs to values typical of common bulk semiconductors, and very far from the impressive experiments on 2D graphene. Suspended GNRs with a width of 1 nm exhibit a mobility close to 500 cm^2/Vs at room temperature, whereas if the same GNRs are deposited on HfO2 mobility is further reduced to about 60 cm^2/Vs due to surface phonons. We also show the occurrence of polaron formation, leading to band gap renormalization of ~118 meV for 1 nm-wide armchair GNRs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

A microscopically accurate model of partially ballistic nanoMOSFETs in saturation based on channel backscattering

We propose a model for partially ballistic MOSFETs and for channel backscattering that is alternative to the well known Lundstrom model and is more accurate from the point of view of the actual energy distribution of carriers. The key point is that we do not use the concept of "virtual source". Our model differs from the Lundstrom model in two assumptions: i) the reflection coefficients from the top of the energy barrier to the drain and from top of the barrier to the source are approximately equal (whereas in the Lundstrom model the latter is zero), and ii) inelastic scattering is assumed through a ratio of the average velocity of forward-going carriers to that of backward-going carriers at the top of the barrier kv > 1 (=1 in the Lundstrom model). We support our assumptions with 2D full band Monte Carlo (MC) simulations including quantum corrections in nMOSFETs. We show that our model allows to extract from the electrical characteristics a backscattering coefficient very close to that obtained from the solution of the Boltzmann transport equation, whereas the Lundstrom model overestimates backscattering by up to 40%.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs

In this work we propose a fully experimental method to extract the barrier lowering in short-channel saturated MOSFETs using the Lundstrom backscattering transport model in a one sub-band approximation and carrier degeneracy. The knowledge of the barrier lowering at the operative bias point in the inversion regime is of fundamental importance in device scaling. At the same time we obtain also an estimate of the backscattering ratio and of the saturation inversion charge. Respect to previously reported works on extraction of transport parameters based on the Lundstrom model, our extraction method is fully consistent with it, whereas other methods make a number of approximations in the calculation of the saturation inversion charge which are inconsistent with the model. The proposed experimental extraction method has been validated and applied to results from device simulation and measurements on short-channel poly-Si/SiON gate nMOSFETs with gate length down to 70 nm. Moreover we propose an extension of the backscattering model to the case of 2D geometries (e.g. bulk MOSFETs). We found that, in this case, the backscattering is governed by the carrier transport in a few nanometers close to the silicon/oxide interface and that the value of the backscattering ratio obtained with a 1D approach can be significantly different from the real 2D value.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electric-Field-control of spin rotation in bilayer graphene

The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer. Spintronics also offers the possibility of devising hybrid devices able to perform logic, communication, and storage operations. Graphene, with its potentially long spin-coherence length, is a promising material for spin-encoded information transport. However, the small spin-orbit interaction is also a limitation for the design of conventional devices based on the canonical Datta-Das spin-FET. An alternative solution can be found in magnetic doping of graphene, or, as discussed in the present work, in exploiting the proximity effect between graphene and Ferromagnetic Oxides (FOs). Graphene in proximity to FO experiences an exchange proximity interaction (EPI), that acts as an effective Zeeman field for electrons in graphene, inducing a spin precession around the magnetization axis of the FO. Here we show that in an appropriately designed double-gate field-effect transistor, with a bilayer graphene channel and FO used as a gate dielectric, spin-precession of carriers can be turned ON and OFF with the application of a differential voltage to the gates. This feature is directly probed in the spin-resolved conductance of the bilayer.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Enhanced shot noise in carbon nanotube field-effect transistors

We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green functions formalism, and on a Monte Carlo approach to reproduce injection statistics. Noise enhancement is due to the correlation between trapping of holes from the drain into quasi-bound states in the channel and thermionic injection of electrons from the source, and can lead to an appreciable Fano factor of 1.22 at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Model of tunneling transistors based on graphene on SiC

Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC Tunnel Field-Effect Transistors (TFETs), and assess the DC and high frequency figures of merit. The steep subthreshold behavior can enable I_{ON}/I_{OFF} ratios exceeding 10^4 even with a low supply voltage of 0.15 V, for devices with gatelength down to 30 nm. Intrinsic transistor delays smaller than 1 ps are obtained. These factors make the device an interesting candidate for low-power nanoelectronics beyond CMOS.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Shot noise suppression in quasi one-dimensional Field Effect Transistors

We present a novel method for the evaluation of shot noise in quasi one-dimensional field-effect transistors, such as those based on carbon nanotubes and silicon nanowires. The method is derived by using a statistical approach within the second quantization formalism and allows to include both the effects of Pauli exclusion and Coulomb repulsion among charge carriers. In this way it extends Landauer-Buttiker approach by explicitly including the effect of Coulomb repulsion on noise. We implement the method through the self-consistent solution of the 3D Poisson and transport equations within the NEGF framework and a Monte Carlo procedure for populating injected electron states. We show that the combined effect of Pauli and Coulomb interactions reduces shot noise in strong inversion down to 23 % of the full shot noise for a gate overdrive of 0.4 V, and that neglecting the effect of Coulomb repulsion would lead to an overestimation of noise up to 180 %.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large Ion and Ion/Ioff ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Statistical theory of shot noise in quasi-1D Field Effect Transistors in the presence of electron-electron interaction

We present an expression for the shot noise power spectral density in quasi-one dimensional conductors electrostatically controlled by a gate electrode, that includes the effects of Coulomb interaction and of Pauli exclusion among charge carriers. In this sense, our expression extends the well known Landauer-Buttiker noise formula to include the effect of Coulomb interaction through induced fluctuations in the device potential. Our approach is based on the introduction of statistical properties of the scattering matrix and on a second-quantization many-body description. From a quantitative point of view, statistical properties are obtained by means of Monte Carlo simulations on a ensemble of different configurations of injected states, requiring the solution of the Poisson-Schrodinger equation on a three-dimensional grid, with the non-equilibrium Green functions formalism. In a series of example, we show that failure to consider the effects of Coulomb interaction on noise leads to a gross overestimation of the noise spectrum of quasi-one dimensional devices.

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preprint2009arXiv

A semi-analytical model of Bilayer Graphene Field Effect Transistor

Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space and to find a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic transport assumptions, takes into account bilayer-graphene tunable gap and self polarization, and includes all band-to-band tunneling current components, which are shown to represent the major limitation to transistor operation, because the limited achievable energy gap is not sufficient to obtain a large Ion/Ioff ratio.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Analytical model of 1D Carbon-based Schottky-Barrier Transistors

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs), taking into account on equal footing both SB contacts and FFE transport regime. Intermediate transport is introduced within the Buttiker probe approach to dissipative transport, in which a non-ballistic transistor is seen as a suitable series of individually ballistic channels. Our model permits the study of the interplay of SBs and ambipolar FFE transport, and in particular of the transition between SB-limited and dissipation-limited transport.

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preprint2009arXiv

Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime

The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have been proposed, based on the introduction of a backscattering coefficient, or numerical approaches consisting in the MonteCarlo solution of the Boltzmann transport equation or in the introduction of dissipation in quantum transport descriptions. In this paper we propose a very simple analytical model to seamlessly cover the whole range of transport regimes in generic quasi-one dimensional field-effect transistors, and apply it to silicon nanowire transistors. The model is based on describing a generic transistor as a chain of ballistic nanowire transistors in series, or as the series of a ballistic transistor and a drift-diffusion transistor operating in the triode region. As an additional result, we find a relation between the mobility and the mean free path, that has deep consequences on the understanding of transport in nanoscale devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC

In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require prohibitive lithography - and exhibits a wider gap than other alternative options, such as bilayer graphene. Here we propose a model and assess the achievable performance of a nanoscale FET based on epitaxial graphene on SiC, conducting an exploration of the design parameter space. We show that the current can be modulated by 4 orders of magnitude; for digital applications an Ion /Ioff ratio of 50 and a subthreshold slope of 145 mV/decade can be obtained with a supply voltage of 0.25 V. This represents a significant progress towards solid-state integration of graphene electronics, but not yet sufficient for digital applications.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Rashba spin precession in quantum Hall edge channels

Quasi--one dimensional edge channels are formed at the boundary of a two-dimensional electron system subject to a strong perpendicular magnetic field. We consider the effect of Rashba spin--orbit coupling, induced by structural inversion asymmetry, on their electronic and transport properties. Both our analytical and numerical results show that spin--split quantum--Hall edge channels exhibit properties analogous to that of Rashba--split quantum wires. Suppressed backscattering and a long spin life time render these edge channels an ideal system for observing voltage--controlled spin precession. Based on the latter, we propose a magnet--less spin--dependent electron interferometer.

0 citations0 reviewsNo code linkedOpen access