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Paolo Michetti

Paolo Michetti appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

13 published item(s)

preprint2014arXiv

Plasmons due to the interplay of Dirac and Schrödinger fermions

We study the interplay between Dirac and Schrödinger fermions in the polarization properties of a two-dimensional electron gas (2DEG). Specifically, we analyze the low-energy sector of narrow-gap semiconductors described by a two-band Kane model. In the context of quantum spin Hall insulators, particularly, in Hg(Cd)Te quantum wells, this model is named Bernevig-Hughes-Zhang model. Interestingly, it describes electrons with intermediate properties between Dirac and Schrödinger fermions. We calculate the dynamical dielectric function of such a model at zero temperature within random phase approximation. Surprisingly, plasmon resonances are found in the intrinsic (undoped) limit, whereas they are absent - in that limit - in graphene as well as ordinary 2DEGs. Additionally, we demonstrate that the optical conductivity offers a quantitative way to identify the topological phase of Hg(Cd)Te quantum wells from a bulk measurement.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Screening properties and plasmons of Hg(Cd)Te quantum wells

Under certain conditions, Hg(Cd)Te quantum wells (QWs) are known to realize a time-reversal symmetric, two-dimensional topological insulator phase. Its low-energy excitations are well-described by the phenomenological Bernevig-Hughes-Zhang (BHZ) model that interpolates between Schrödinger and Dirac fermion physics. We study the polarization function of this model in random phase approximation (RPA) in the intrinsic limit and at finite doping. While the polarization properties in RPA of Dirac and Schrödinger particles are two comprehensively studied problems, our analysis of the BHZ model bridges the gap between these two limits, shedding light on systems with intermediate properties. We gain insight into the screening properties of the system and on its characteristic plasma oscillations. Interestingly, we discover two different kinds of plasmons that are related to the presence of intra- and interband excitations. Observable signatures of these plasmons are carefully analyzed in a variety of distinct parameter regimes, including the experimentally relevant ones for Hg(Cd)Te QWs. We conclude that the discovered plasmons are observable by Raman or electron loss spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Time Reversal Symmetric Topological Exciton Condensate in Bilayer HgTe Quantum Wells

We investigate a bilayer system of critical HgTe quantum wells each featuring a spin-degenerate pair of massless Dirac fermions. In the presence of an electrostatic inter-layer Coulomb coupling, we determine the exciton condensate order parameter of the system self-consistently. Calculating the bulk topological $\mathbb Z_2$ invariant of the resulting mean field Hamiltonian, we discover a novel time reversal symmetric topological exciton condensate state coined the helical topological exciton condensate. We argue that this phase can exist for experimentally relevant parameters. Interestingly, due to its multi-band nature, the present bilayer model exhibits a nontrivial interplay between spontaneous symmetry breaking and topology: Depending on which symmetry the condensate order parameter spontaneously picks in combined orbital and spin space, stable minima in the free energy corresponding to both trivial and nontrivial gapped states can be found.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Devices with electrically tunable topological insulating phases

Solid-state topological insulating phases, characterized by spin-momentum locked edge modes, provide a powerful route for spin and charge manipulation in electronic devices. We propose to control charge and spin transport in the helical edge modes by electrically switching the topological insulating phase in a HgTe/CdTe double quantum well device. We introduce the concept of a topological field-effect-transistor and analyze possible applications to a spin battery, which also realize a set up for an all-electrical investigation of the spin-polarization dynamics in metallic islands.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Microscopic Theory of Polariton Lasing via Vibronically Assisted Scattering

Polariton lasing has recently been observed in strongly coupled crystalline anthracene microcavities. A simple model is developed describing the onset of the non-linear threshold based on a master equation including the relevant relaxation processes and employing realistic material parameters. The mechanism governing the build-up of the polariton population - namely bosonic stimulated scattering from the exciton reservoir via a vibronically assisted process - is characterized and its efficiency calculated on the basis of a microscopic theory. The role of polariton-polariton bimolecular quenching is identified and temperature dependent effects are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Tunable quantum spin Hall effect in double quantum wells

The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of helical edge modes protected by time-reversal symmetry, has been demonstrated in HgTe-based quantum wells (QWs) with an inverted bandgap. We analyze the topological properties of a generically coupled HgTe-based double QW (DQW) and show how in such a system a TI phase can be driven by an inter-layer bias voltage, even when the individual layers are non-inverted. We argue, that this system allows for similar (layer-)pseudospin based physics as in bilayer graphene but with the crucial absence of a valley degeneracy.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Bound states and persistent currents in topological insulator rings

We analyze theoretically the bound state spectrum of an Aharonov Bohm (AB) ring in a two-dimensional topological insulator using the four-band model of HgTe-quantum wells as a concrete example. We calculate analytically the circular helical edge states and their spectrum as well as the bound states evolving out of the bulk spectrum as a function of the applied magnetic flux and dimension of the ring. We also analyze the spin-dependent persistent currents, which can be used to measure the spin of single electrons. We further take into account the Rashba spin-orbit interaction which mixes the spin states and derive its effect on the ring spectrum. The flux tunability of the ring states allows for coherent mixing of the edge- and the spin degrees of freedom of bound electrons which could be exploited for quantum information processing in topological insulator rings.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spintronic devices from bilayer graphene in contact to ferromagnetic insulators

Graphene-based materials show promise for spintronic applications due to their potentially large spin coherence length. On the other hand, because of their small intrinsic spin-orbit interaction, an external magnetic source is desirable in order to perform spin manipulation. Because of the flat nature of graphene, the proximity interaction with a ferromagnetic insulator (FI) surface seems a natural way to introduce magnetic properties into graphene. Exploiting the peculiar electronic properties of bilayer graphene coupled with FIs, we show that it is possible to devise very efficient gate-tunable spin-rotators and spin-filters in a parameter regime of experimental feasibility. We also analyze the composition of the two spintronic building blocks in a spin-field-effect transistor.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electric-Field-control of spin rotation in bilayer graphene

The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer. Spintronics also offers the possibility of devising hybrid devices able to perform logic, communication, and storage operations. Graphene, with its potentially long spin-coherence length, is a promising material for spin-encoded information transport. However, the small spin-orbit interaction is also a limitation for the design of conventional devices based on the canonical Datta-Das spin-FET. An alternative solution can be found in magnetic doping of graphene, or, as discussed in the present work, in exploiting the proximity effect between graphene and Ferromagnetic Oxides (FOs). Graphene in proximity to FO experiences an exchange proximity interaction (EPI), that acts as an effective Zeeman field for electrons in graphene, inducing a spin precession around the magnetization axis of the FO. Here we show that in an appropriately designed double-gate field-effect transistor, with a bilayer graphene channel and FO used as a gate dielectric, spin-precession of carriers can be turned ON and OFF with the application of a differential voltage to the gates. This feature is directly probed in the spin-resolved conductance of the bilayer.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Model of tunneling transistors based on graphene on SiC

Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC Tunnel Field-Effect Transistors (TFETs), and assess the DC and high frequency figures of merit. The steep subthreshold behavior can enable I_{ON}/I_{OFF} ratios exceeding 10^4 even with a low supply voltage of 0.15 V, for devices with gatelength down to 30 nm. Intrinsic transistor delays smaller than 1 ps are obtained. These factors make the device an interesting candidate for low-power nanoelectronics beyond CMOS.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Analytical model of 1D Carbon-based Schottky-Barrier Transistors

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs), taking into account on equal footing both SB contacts and FFE transport regime. Intermediate transport is introduced within the Buttiker probe approach to dissipative transport, in which a non-ballistic transistor is seen as a suitable series of individually ballistic channels. Our model permits the study of the interplay of SBs and ambipolar FFE transport, and in particular of the transition between SB-limited and dissipation-limited transport.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime

The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have been proposed, based on the introduction of a backscattering coefficient, or numerical approaches consisting in the MonteCarlo solution of the Boltzmann transport equation or in the introduction of dissipation in quantum transport descriptions. In this paper we propose a very simple analytical model to seamlessly cover the whole range of transport regimes in generic quasi-one dimensional field-effect transistors, and apply it to silicon nanowire transistors. The model is based on describing a generic transistor as a chain of ballistic nanowire transistors in series, or as the series of a ballistic transistor and a drift-diffusion transistor operating in the triode region. As an additional result, we find a relation between the mobility and the mean free path, that has deep consequences on the understanding of transport in nanoscale devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC

In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require prohibitive lithography - and exhibits a wider gap than other alternative options, such as bilayer graphene. Here we propose a model and assess the achievable performance of a nanoscale FET based on epitaxial graphene on SiC, conducting an exploration of the design parameter space. We show that the current can be modulated by 4 orders of magnitude; for digital applications an Ion /Ioff ratio of 50 and a subthreshold slope of 145 mV/decade can be obtained with a supply voltage of 0.25 V. This represents a significant progress towards solid-state integration of graphene electronics, but not yet sufficient for digital applications.

0 citations0 reviewsNo code linkedOpen access