Researcher profile

Gilles Hug

Gilles Hug contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2013arXiv

Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations

We report an ab initio study of the semiconducting Mg2X (with X = Si, Ge) compounds and in particular we analyze the formation energy of the different point defects with the aim to understand the intrinsic doping mechanisms. We find that the formation energy of Mg2Ge is 50 % larger than the one of Mg2Si, in agreement with the experimental tendency. From the study of the stability and the electronic properties of the most stable defects taking into account the growth conditions, we show that the main reason for the n-doping in these materials comes from interstitial magnesium defects. Conversely, since other defects acting like acceptors such as Mg vacancies or multivacancies are more stable in Mg2Ge than in Mg2Si, this explains why Mg2Ge can be of n or p type, contrary to Mg2Si. The finding that the most stable defects are different in Mg2Si and Mg2Ge and depend on the growth conditions is important and must be taken into account in the search of the optimal doping to improve the thermoelectric properties of these materials.

preprint2012arXiv

Neutron Diffraction Measurements and First Principles Study of Thermal Motion of Atoms in Select M_{n+1}AX_n and Binary MX Transition Metal Carbide Phases

Herein, we compare the thermal vibrations of atoms in select ternary carbides with the formula Mn+1AXn ("MAX phases," M = Ti, Cr; A = Al, Si, Ge; X = C, N) as determined from first principles phonon calculations to those obtained from high-temperature neutron powder diffraction studies. The transition metal carbides TiC, TaC, and WC are also studied to test our methodology on simpler carbides. Good qualitative and quantitative agreement is found between predicted and experimental values for the binary carbides. For all the MAX phases studied - Ti3SiC2, Ti3GeC2, Ti2AlN, Cr2GeC and Ti4AlN3 - density functional theory calculations predict that the A element vibrates with the highest amplitude and does so anisotropically with a higher amplitude within the basal plane, which is in line with earlier results from high-temperature neutron diffraction studies. In some cases, there are quantitative differences in the absolute values between the theoretical and experimental atomic displacement parameters, such as reversal of anisotropy or a systematic offset of temperature-dependent atomic displacement parameters. The mode-dependent Grüneisen parameters are also computed to explore the anharmonicity in the system.

preprint2011arXiv

Phonon-phonon interactions in transition metals

In this paper the phonon self energy produced by anharmonicity is calculated using second order many body perturbation theory for all bcc, fcc and hcp transition metals. The symmetry properties of the phonon interactions are used to obtain an expression for the self energy as a sum over irreducible triplets, very similar to integration in the irreducible part of the Brillouin zone for one particle properties. The results obtained for transition metals shows that the lifetime is on the order of 10^10 s. Moreover the Peierls approximation for the imaginary part of the self energy is shown to be reasonable for bcc and fcc metals. For hcp metals we show that the Raman active mode decays into a pair of acoustic phonons, their wave vector being located on a surface defined by conservation laws.