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Gi-Yeop Kim

Gi-Yeop Kim contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Sr$_2$IrO$_4$/Sr$_3$Ir$_2$O$_7$ superlattice for a model 2D quantum Heisenberg antiferromagnet

Spin-orbit entangled pseudospins hold promise for a wide array of exotic magnetism ranging from a Heisenberg antiferromagnet to a Kitaev spin liquid depending on the lattice and bonding geometry, but many of the host materials suffer from lattice distortions and deviate from idealized models in part due to inherent strong pseudospin-lattice coupling. Here, we report on the synthesis of a magnetic superlattice comprising the single ($n$=1) and the double ($n$=2) layer members of the Ruddlesden-Popper series iridates Sr$_{n+1}$Ir$_{n}$O$_{3n+1}$ alternating along the $c$-axis, and provide a comprehensive study of its lattice and magnetic structures using scanning transmission electron microscopy, resonant elastic and inelastic x-ray scattering, third harmonic generation measurements and Raman spectroscopy. The superlattice is free of the structural distortions reported for the parent phases and has a higher point group symmetry, while preserving the magnetic orders and pseudospin dynamics inherited from the parent phases, featuring two magnetic transitions with two symmetry-distinct orders. We infer weaker pseudospin-lattice coupling from the analysis of Raman spectra and attribute it to frustrated magnetic-elastic couplings. Thus, the superlattice expresses a near ideal network of effective spin-one-half moments on a square lattice.

preprint2021arXiv

Spin-orbit Torque Switching in an All-Van der Waals Heterostructure

Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency ($ξ$) and electrical conductivity ($σ$), and an efficient spin injection across a transparent interface. Herein, we use single crystals of the van der Waals (vdW) topological semimetal WTe$_2$ and vdW ferromagnet Fe$_3$GeTe$_2$ to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of $ξ{\approx}4.6$ and $σ{\approx}2.25{\times}10^5 Ω^{-1} m^{-1}$ for WTe$_2$. Moreover, we obtain the significantly reduced switching current density of $3.90{\times}10^6 A/cm^2$ at 150 K, which is an order of magnitude smaller than those of conventional heavy-metal/ ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.

preprint2020arXiv

Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet

Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the widely-studied insulating counterparts in switching and detecting the spin states through electrical currents but have been much less explored due to the lack of suitable materials. Here, utilizing the extreme sensitivity of the vdW interlayer magnetism to material composition, we report the itinerant antiferromagnetism in Co-doped Fe4GeTe2 with TN ~ 210 K, an order of magnitude increased as compared to other known AFM vdW metals. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, temperature, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets with tunable interlayer exchange interaction and magnetic anisotropy, suitable for AFM spintronic applications.