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Gerhard Jakob

Gerhard Jakob appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.str-elphysics.app-phphysics.optics

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Published work

19 published item(s)

preprint2023arXiv

Nanosecond True Random Number Generation with Superparamagnetic Tunnel Junctions -- Identification of Joule Heating and Spin-Transfer-Torque effects

This work investigates nanosecond superparamagnetic switching in 50 nm diameter in-plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial anisotropy, dwell times below 10 ns and auto-correlation times down to 5 ns are measured for circular superparamagnetic tunnel junctions (SMTJs). SMTJs exhibit probabilistic switching of the magnetic free layer, which can be used for the generation of true random numbers. The quality of random bitstreams, generated by our SMTJ, is evaluated with a statistical test suite (NIST STS, sp 800-22) and shows true randomness after three XOR operations of four random SMTJ bitstreams. A low footprint CMOS circuit is proposed for fast and energy-efficient random number generation. We demonstrate that the probability of a 1 or 0 can be tuned by spin-transfer-torque (STT), while the average bit generation rate is mainly affected by the current density via Joule heating. Although both effects are always present in MTJs, Joule heating most often is neglected. However, with a resistance area (RA) product of 15 $Ωμ$m$^2$ and current densities of the order of 1 MA/cm$^2$, an increasing temperature at the tunneling site results in a significant increase in the switching rate. As Joule heating and STT scale differently with current density, device design can be optimized based on our findings.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Average power scaling of THz spintronic emitters in reflection geometry

Metallic spintronic THz emitters have become well-established for offering ultra-broadband, gap-less THz emission in a variety of excitation regimes, in combination with reliable fabrication and excellent scalability. However, so far, their potential for high-average-power excitation to reach strong THz fields at high repetition rates has not been thoroughly investigated. In this article, we explore the power scaling behavior of tri-layer spintronic emitters using an Yb-fiber excitation source, delivering an average power of 18.5 W at 400 kHz repetition rate, temporally compressed to a pulse duration of 27 fs. We confirm that the reflection geometry with back-side cooling is ideally suited for these emitters in the high-average-power excitation regime. In order to understand limiting mechanisms, we disentangle the effects on THz power generation by average power and pulse energy, by varying the repetition rate of the laser. Our results show that the conversion efficiency remains mostly dependent on the incident fluence in this high-average-power, high-repetition-rate excitation regime if the emitters are efficiently cooled. Using these findings, we optimize the conversion efficiency to reach 5e-6 at highest excitation powers in the back-cooled reflection geometry. Our findings provide guidelines for scaling the power of THz radiation emitted by spintronic emitters to the mW-level by using state-of-the-art femtosecond sources with multi-hundred-Watt average power to reach ultra-broadband, strong-field THz sources with high repetition rate.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tuning spin-orbit torques across the phase transition in VO$_2$/NiFe heterostructure

The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques in VO$_2$/NiFe heterostructures were investigated using spin-torque ferromagnetic resonance, where the VO$_2$ layer undergoes a prominent insulator-metal transition. A roughly two-fold increase in the Gilbert damping parameter, $α$, with temperature was attributed to the change in the VO$_2$/NiFe interface spin absorption across the VO$_2$ phase transition. More remarkably, a large modulation ($\pm$100%) and a sign change of the current-induced spin-orbit torque across the VO$_2$ phase transition suggest two competing spin-orbit torque generating mechanisms. The bulk spin Hall effect in metallic VO$_2$, corroborated by our first-principles calculation of spin Hall conductivity, $σ_{SH} \approx 10^4 \frac{\hbar}{e} Ω^{-1} m^{-1}$, is verified as the main source of the spin-orbit torque in the metallic phase. The self-induced/anomalous torque in NiFe, of the opposite sign and a similar magnitude to the bulk spin Hall effect in metallic VO$_2$, could be the other competing mechanism that dominates as temperature decreases. For applications, the strong tunability of the torque strength and direction opens a new route to tailor spin-orbit torques of materials which undergo phase transitions for new device functionalities.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Observation of the Orbital Rashba-Edelstein Magnetoresistance

We report the observation of magnetoresistance (MR) originating from the orbital angular momentum transport (OAM) in a Permalloy (Py) / oxidized Cu (Cu*) heterostructure: the orbital Rashba-Edelstein magnetoresistance. The angular dependence of the MR depends on the relative angle between the induced OAM and the magnetization in a similar fashion as the spin Hall magnetoresistance (SMR). Despite the absence of elements with large spin-orbit coupling, we find a sizable MR ratio, which is in contrast to the conventional SMR which requires heavy elements. By varying the thickness of the Cu* layer, we confirm that the interface is responsible for the MR, suggesting that the orbital Rashba-Edelstein effect is responsible for the generation of the OAM. Through Py thickness-dependence studies, we find that the effective values for the spin diffusion and spin dephasing lengths of Py are significantly larger than the values measured in Py / Pt bilayers, approximately by the factor of 2 and 4, respectively. This implies that another mechanism beyond the conventional spin-based scenario is responsible for the MR observed in Py / Cu* structures originated in a sizeable transport of OAM. Our findings not only unambiguously demonstrate the current-induced torque without using any heavy element via the OAM channel but also provide an important clue towards the microscopic understanding of the role that OAM transport can play for magnetization dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Propagation length of antiferromagnetic magnons governed by domain configurations

The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation, over micrometer distances, in thin films of the insulating antiferromagnet hematite with large magnetic domains whilst evidencing much shorter attenuation lengths in multidomain thin films. Through transport and magnetic imaging, we conclude on the role of the magnetic domain structure and spin-wave scattering at domain walls to govern the transport. We manipulate the spin transport by tailoring the domain configuration through field cycle training. For the appropriate crystalline orientation, zero-field spin-transport is achieved across micrometers, as required for device integration.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Transition of laser-induced terahertz spin currents from torque- to conduction-electron-mediated transport

Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1) spin-polarized conduction electrons and/or (2) torque between electron spins. To identify a cross-over from (1) to (2), we study laser-driven spin currents in F|Pt stacks where F consists of model materials with different degrees of electrical conductivity. For the magnetic insulators YIG, GIG and maghemite, identical dynamics is observed. It arises from the THz interfacial spin Seebeck effect (SSE), is fully determined by the relaxation of the electrons in the metal layer and provides an estimate of the spin-mixing conductance of the GIG/Pt interface. Remarkably, in the half-metallic ferrimagnet Fe3O4 (magnetite), our measurements reveal two spin-current components with opposite direction. The slower, positive component exhibits SSE dynamics and is assigned to torque-type magnon excitation of the A- and B-spin sublattices of Fe3O4. The faster, negative component arises from the pyro-spintronic effect and can consistently be assigned to ultrafast demagnetization of e-sublattice minority-spin hopping electrons. This observation supports the magneto-electronic model of Fe3O4. In general, our results provide a new route to the contact-free separation of torque- and conduction-electron-mediated spin currents.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electric-field control of spin-orbit torques in perpendicularly magnetized W/CoFeB/MgO films

Controlling magnetism by electric fields offers a highly attractive perspective for designing future generations of energy-efficient information technologies. Here, we demonstrate that the magnitude of current-induced spin-orbit torques in thin perpendicularly magnetized CoFeB films can be tuned and even increased by electric field generated piezoelectric strain. Using theoretical calculations, we uncover that the subtle interplay of spin-orbit coupling, crystal symmetry, and orbital polarization is at the core of the observed strain dependence of spin-orbit torques. Our results open a path to integrating two energy efficient spin manipulation approaches, the electric field-induced strain and the current-induced magnetization switching, thereby enabling novel device concepts.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance

TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the Néel vector continuously rotates from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at THz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for reading out the magnetic state. Here we demonstrate that orthorhombic TFO thin films can be grown by pulsed laser deposition and the detection of the SRT in TFO thin films can be accessed by making use of the all electrical spin Hall magnetoresistance (SMR), in good agreement for the temperature range where the SRT occurs. Our results demonstrate that one can electrically detect the SRT in insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Heisenberg Exchange and Dzyaloshinskii-Moriya Interaction in Ultrathin CoFeB Single and Multilayers

We present results of the analysis of Brillouin Light Scattering (BLS) measurements of spin waves performed on ultrathin single and multirepeat CoFeB layers with adjacent heavy metal layers. From a detailed study of the spin-wave dispersion relation, we independently extract the Heisenberg exchange interaction (also referred to as symmetric exchange interaction), the Dzyaloshinskii-Moriya interaction (DMI, also referred to as antisymmetric exchange interaction), and the anisotropy field. We find a large DMI in CoFeB thin films adjacent to a Pt layer and nearly vanishing DMI for CoFeB films adjacent to a W layer. Furthermore, the residual influence of the dipolar interaction on the dispersion relation and on the evaluation of the Heisenberg exchange parameter is demonstrated. In addition, an experimental analysis of the DMI on the spin-wave lifetime is presented. All these parameters play a crucial role in designing skyrmionic or spin-orbitronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures

We characterized the interfaces of heterostructures with different stack sequences of La0.7Sr0.3MnO3/BiFeO3 (LSMO/BFO) and BFO/LSMO using TEM revealing sharp and rough interfaces, respectively. Magnetometry and magnetoresistance measurements do not show a detectable exchange bias coupling for the multistack with sharp interface. Instead, the heterostructures with rough and chemically intermixed interfaces exhibit a sizable exchange bias coupling. Furthermore, we find a temperature-dependent irreversible magnetization behavior and an exponential decay of coercive and exchange bias field with temperature suggesting a possible spin-glass-like state at the interface of both stacks.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Origin of the thickness-dependent low-temperature enhancement of spin Seebeck effect in YIG films

The temperature dependent longitudinal spin Seebeck effect (SSE) in heavy metal (HM)/ Y3Fe5O12 (YIG) bilayers is investigated as a function of different magnetic field strength, different HM detection material, and YIG thickness ranging from nm to mm. A large enhancement of the SSE signal is observed at low temperatures leading to a peak of the signal amplitude. We demonstrate that this enhancement shows a clear dependence on the film thickness, being more pronounced for thicker films and vanishing for films thinner than 600 nm. The peak temperature depends on the applied magnetic field strength as well as on the detection material and interface, revealing a more complex behavior beyond the currently discussed phonon-magnon coupling mechanism that considers only bulk effects. While the thickness dependence and magnetic field dependence can be well explained in the framework of the magnon-driven SSE by taking into account the frequency dependent propagation length of thermally excited magnons in the bulk material, the temperature dependence of the SSE is significantly influenced by the interface coupling to an adjacent detection layer. This indicates that previously neglected interface effects play a key role and that the spin current traversing the interface and being detected in the HM depends differently on the magnon frequency for different HMs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Reduced thermal conductivity of TiNiSn/HfNiSn superlattices

Diminution of the thermal conductivity is a crucial aspect in thermoelectric research. We report a systematic and significant reduction of the cross-plane thermal conductivity in a model system consisting of DC sputtered TiNiSn and HfNiSn half-Heusler superlattices. The reduction of $κ$ is measured by the 3$ω$ method and originates from phonon scattering at the internal interfaces. Heat transport in the superlattices is calculated based on Boltzmann transport theory, including a diffusive mismatch model for the phonons at the internal interfaces. Down to superlattice periodicity of 3 nm the phonon spectrum mismatch between the superlattice components quantitatively explains the reduction of $κ$. For very thin individual layers the interface model breaks down and the artificial crystal shows an enhanced $κ$. We also present an enhanced ZT value for all investigated superlattices compared to the single TiNiSn and HfNiSn films.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Thermal generation of spin current in epitaxial CoFe2O4 thin films

The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe2O4 (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect (ISHE). The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of ~100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Furthermore, we demonstrate that the spin Seebeck effect is an effective tool to study the magnetic anisotropy induced by epitaxial strain, especially in ultrathin films with low magnetic moments.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic properties of Co$_{2}$FeSi investigated by x-ray magnetic linear dichroism

We present experimental XMLD spectra measured on epitaxial (001)-oriented thin Co$_{2}$FeSi films, which are rich in features and depend sensitively on the degree of atomic order and interdiffusion from capping layers. Al- and Cr-capped films with different degrees of atomic order were prepared by DC magnetron sputtering by varying the deposition temperatures. The local structural properties of the film samples were additionally investigated by nuclear magnetic resonance (NMR) measurements. The XMLD spectra of the different samples show clear and uniform trends at the $L_{3,2}$ edges. The Al-capped samples show similar behavior as previous measured XMLD spectra of Co$_2$FeSi$_{0.6}$Al$_{0.4}$. Thus, we assume that during deposition Al atoms are being implanted into the subsurface of Co$_{2}$FeSi. Such an interdiffusion is not observed for the corresponding Cr-capped films, which makes Cr the material of choice for capping Co$_{2}$FeSi films. We report stronger XMLD intensities at the $L_{3,2}$ Co and Fe egdes for films with a higher saturation magnetization. Additionally, we compare the spectra with \textit{ab initio} predictions and obtain a reasonably good agreement. Furthermore, we were able to detect an XMCD signal at the Si $L$-edge, indicating the presence of a magnetic moment at the Si atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Origin of the spin Seebeck effect probed by temperature dependent measurements in Gd$_{3}$Fe$_{5}$O$_{12}$

We probe the spin Seebeck effect in Gd$_{3}$Fe$_{5}$O$_{12}$/Pt hybrid structures as a function of temperature and observe two sign changes of the spin Seebeck signal with decreasing temperature. A first sign change occurs at a temperature close to the Gd$_{3}$Fe$_{5}$O$_{12}$ magnetic compensation point at around 280 K. There the spin Seebeck signal changes sign abruptly with unaltered amplitude, indicating that the spin current is mainly caused by the magnetic Fe sub-lattices, which reorient their directions at this temperature. A second, more gradual sign change takes place around the ordering temperature of the Gd sub-lattice in the range of 65-85 K, showing that the Gd magnetic sub-lattice dominates the thermally driven spin current at lower temperatures. These sign changes together with the non-monotonous dependence of the spin Seebeck signal on the temperature demonstrate that the magnonic spin current is not simply replicating the effective magnetization of Gd$_{3}$Fe$_{5}$O$_{12}$. Rather, the thermally generated net spin current results from a complex interplay of the three magnetic sub-lattices involved.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Determination of the origin of the spin Seebeck effect - bulk vs. interface effects

The observation of the spin Seebeck effect in insulators has meant a breakthrough for spin caloritronics due to the unique ability to generate pure spin currents by thermal excitations in insulating systems without moving charge carriers. Since the recent first observation, the underlying mechanism and the origin of the observed signals have been discussed highly controversially. Here we present a characteristic dependence of the longitudinal spin Seebeck effect amplitude on the thickness of the insulating ferromagnet (YIG). Our measurements show that the observed behavior cannot be explained by any effects originating from the interface, such as magnetic proximity effects in the spin detector (Pt). Comparison to theoretical calculations of thermal magnonic spin currents yields qualitative agreement for the thickness dependence resulting from the finite effective magnon propagation length so that the origin of the effect can be traced to genuine bulk magnonic spin currents ruling out parasitic interface effects.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magnetic Domain Structure of La0.7Sr0.3MnO3 thin-films probed at variable temperature with Scanning Electron Microscopy with Polarization Analysis

The domain configuration of 50 nm thick La0.7SrMnO3 films has been directly investigated using scanning electron microscopy with polarization analysis (SEMPA), with magnetic contrast obtained without the requirement for prior surface preparation. The large scale domain structure reflects a primarily four-fold anisotropy, with a small uniaxial component, consistent with magneto-optic Kerr effect measurements. We also determine the domain transition profile and find it to be in agreement with previous estimates of the domain wall width in this material. The temperature dependence of the image contrast is investigated and compared to superconducting-quantum interference device magnetometry data. A faster decrease in the SEMPA contrast is revealed, which can be explained by the technique's extreme surface sensitivity, allowing us to selectively probe the surface spin polarization which due to the double exchange mechanism exhibits a distinctly different temperature dependence than the bulk magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fabrication and characterization of semiconducting half Heusler YPtSb thin films

The semiconducting half Heusler compound YPtSb was predicted theoretically to be capable of changing into topological insulator under proper strain. In this work, p type semiconducting half-Heusler YPtSb thin films were prepared by magnetron co-sputtering method from a specially designed target for the first time. Textured structure with (111) plane paralleling with (001) of MgO substrate was observed when YPtSb thin films were grown on MgO (100) substrate at 600°C.Electrical measurements show that the resistivity of YPtSb films decreases with increasing temperature, indicating a semiconductor-like behavior. The carrier density is as high as 1.15 X 10^21 cm-3 at 300 K. The band gap of YPtSb thin films obtained by infrared spectroscopy is around 0.1 - 0.15 eV, which is well in agreement with the theoretical prediction and the value measured in bulk YPtSb.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn thin films by hard x-ray photoelectron spectroscopy

The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of {\it "in-gap"} states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.

0 citations0 reviewsNo code linkedOpen access