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Researcher profile

Gauthier Krizman

Gauthier Krizman contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

3 published item(s)

preprint2023arXiv

A Novel Ferroelectric Rashba Semiconductor

Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials have been established to belong to this class of multifunctional materials. Here, Pb1-xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion is demonstrated by temperature dependent X-ray diffraction, and its effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. Our work defines Pb1- xGexTe as a high-potential FERSC system for spintronic applications.

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preprint2022arXiv

Interaction between interface and massive states in multivalley topological heterostructures

Topological interface states in multivalley systems are studied to unravel their valley sensitivity. For this purpose, multivalley IV-VI topological crystalline insulator (TCI) heterostructures are explored using magneto-optical Landau level spectroscopy up to 34 teslas. We characterize the topological interface states emerging from the distinct L-valleys in Pb1-xSnxSe multi quantum wells grown along the [111] direction. It is shown that the shape of the 2D Fermi surfaces of topological interface states residing at the TCI/trivial insulator interfaces are strongly affected by the valley anisotropy of topologically trivial Pb1-yEuySe barriers. This phenomenon is shown to be due to the deep penetration of the topological interface states into the barriers. For the valleys tilted with respect to the confinement direction, a significant interaction between topological states and the conventional massive quantum well states is observed, evidenced by the resulting large anti-crossings between Landau levels. These are theoretically well-described by a k.p model that takes into account tilt and anisotropy of the valleys in two dimensions. Therefore, our work provides a precise characterization of the topological interface state valley splitting, as well as an accurate determination of the anisotropy of their Dirac cone dispersion.

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preprint2021arXiv

Fermi level tuning and band alignment in Mn doped InAs/GaSb

InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character.

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