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Researcher profile

Gunther Springholz

Gunther Springholz contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.supr-con

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Published work

5 published item(s)

preprint2023arXiv

A Novel Ferroelectric Rashba Semiconductor

Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials have been established to belong to this class of multifunctional materials. Here, Pb1-xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion is demonstrated by temperature dependent X-ray diffraction, and its effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. Our work defines Pb1- xGexTe as a high-potential FERSC system for spintronic applications.

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preprint2022arXiv

Interaction between interface and massive states in multivalley topological heterostructures

Topological interface states in multivalley systems are studied to unravel their valley sensitivity. For this purpose, multivalley IV-VI topological crystalline insulator (TCI) heterostructures are explored using magneto-optical Landau level spectroscopy up to 34 teslas. We characterize the topological interface states emerging from the distinct L-valleys in Pb1-xSnxSe multi quantum wells grown along the [111] direction. It is shown that the shape of the 2D Fermi surfaces of topological interface states residing at the TCI/trivial insulator interfaces are strongly affected by the valley anisotropy of topologically trivial Pb1-yEuySe barriers. This phenomenon is shown to be due to the deep penetration of the topological interface states into the barriers. For the valleys tilted with respect to the confinement direction, a significant interaction between topological states and the conventional massive quantum well states is observed, evidenced by the resulting large anti-crossings between Landau levels. These are theoretically well-described by a k.p model that takes into account tilt and anisotropy of the valleys in two dimensions. Therefore, our work provides a precise characterization of the topological interface state valley splitting, as well as an accurate determination of the anisotropy of their Dirac cone dispersion.

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preprint2022arXiv

Probing the magnetic band gap of the ferromagnetic topological insulator MnSb$_2$Te$_4$

Mn-rich MnSb$_2$Te$_4$ is a ferromagnetic topological insulator with yet the highest Curie temperature T_C = 45-50 K. It exhibits a magnetic gap at the Dirac point of the topological surface state that disappears above T_C. By scanning tunneling spectroscopy, we probe this gap at different magnetic fields and temperatures. We firstly reveal that the gap size shrinks, when an in-plane magnetic field of up to B = 3 T is applied, but does not close completely as the magnetization is only partially rotated in-plane. This corroborates the magnetic origin of the gap and the complex magnetic structure. In addition, we demonstrate significant spatiotemporal fluctuations of the gap size at temperatures as low as T_C/2, above which the remanent magnetization indeed decays. This temperature is close to the antiferromagnetic transition temperature observed for bulk-type single crystals of MnSb$_2$Te$_4$, highlighting the important role of competing magnetic orders in the formation of the favorable ferromagnetic topological insulator. Our study, thus, provides crucial insights into the complex magnetic gap opening of topological insulators that is decisive for quantum anomalous Hall devices.

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preprint2020arXiv

Entropy controlled fully reversible nanostructure formation of Ge on miscut vicinal Si (001) surfaces

Entropy effects substantially modify the growth of self-assembled Ge nanostructures on vicinal Si (001) surfaces. As shown by variable temperature scanning tunneling microscopy, this leads to new types of one dimensional nanostructures that are not only tunable in size and shape but can be fully reversible erased and reformed without changes in final sizes and shapes. This unique behavior is caused by the free surface energy renormalization caused by the large step entropy of vicinal surfaces. In thermodynamic equilibrium, this favors the formation of a planar 2D surface at higher temperatures, where-as the nanostructured surface is the preferred low-temperature configuration. Taking the step entropy into account, the critical phase transition temperature is derived by free energy calculations and is shown to scale nearly linearly with the Ge coverage, in excellent agreement with the experiments. Due to self-limitation, the nanowire size is solely controlled by the Ge coverage and vicinal angle, completely independent of the growth or an-nealing conditions. Thus, highly reproducible nanostructures with tunable geometries are obtained. This opens new avenues for controlled nanostructure formation for practical de-vice applications.

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preprint2019arXiv

Step-edge assisted large scale FeSe monolayer growth on epitaxial Bi2Se3 thin films

The interest in Fe-chalcogenide unconventional superconductors is intense after the critical temperature of FeSe was reported enhanced by more than one order of magnitude in the monolayer limit at the interface to an insulating oxide substrate. In heterostructures comprising interfaces of FeSe with topological insulators, additional interesting physical phenomena is predicted to arise e.g. in form of {\it topological superconductivity}. So far superconductive properties of Fe-chalcogenide monolayers were mostly studied by local scanning tunneling spectroscopy experiments, which can detect pseudo-gaps in the density of states as an indicator for Cooper pairing. Direct macroscopic transport properties which can prove or falsify a superconducting phase were rarely reported due to the difficulty to grow films with homogeneous material properties. Here we report on a promising growth method to fabricate continuous carpets of monolayer thick FeSe on molecular beam epitaxy grown Bi$_2$Se$_3$ topological insulator thin films. In contrast to previous works using atomically flat cleaved bulk Bi$_2$Se$_3$ crystal surfaces we observe a strong influence of the high step-edge density (terrace width about 10~nm) on MBE-grown Bi$_2$Se$_3$ substrates, which significantly promotes the growth of coalescing FeSe domains with small tetragonal crystal distortion without compromising the underlying Bi$_2$Se$_3$ crystal structure.

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