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Yves Guldner

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Published work

6 published item(s)

preprint2022arXiv

Interaction between interface and massive states in multivalley topological heterostructures

Topological interface states in multivalley systems are studied to unravel their valley sensitivity. For this purpose, multivalley IV-VI topological crystalline insulator (TCI) heterostructures are explored using magneto-optical Landau level spectroscopy up to 34 teslas. We characterize the topological interface states emerging from the distinct L-valleys in Pb1-xSnxSe multi quantum wells grown along the [111] direction. It is shown that the shape of the 2D Fermi surfaces of topological interface states residing at the TCI/trivial insulator interfaces are strongly affected by the valley anisotropy of topologically trivial Pb1-yEuySe barriers. This phenomenon is shown to be due to the deep penetration of the topological interface states into the barriers. For the valleys tilted with respect to the confinement direction, a significant interaction between topological states and the conventional massive quantum well states is observed, evidenced by the resulting large anti-crossings between Landau levels. These are theoretically well-described by a k.p model that takes into account tilt and anisotropy of the valleys in two dimensions. Therefore, our work provides a precise characterization of the topological interface state valley splitting, as well as an accurate determination of the anisotropy of their Dirac cone dispersion.

preprint2021arXiv

Fermi level tuning and band alignment in Mn doped InAs/GaSb

InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character.

preprint2014arXiv

Disorder-perturbed Landau levels in high electron mobility epitaxial graphene

We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such as vacancies. Their intensity is found to decrease with an annealing process and a partial self-healing over time is observed. Calculations of the perturbed Landau levels by using a delta-like potential show electronic states both between and at the same energies of the Laudau levels of ideal graphene. The calculated absorption spectra involving all perturbed and unperturbed states are in very good agreement with the experiments.

preprint2012arXiv

Direct surface cyclotron resonance terahertz emission from a quantum cascade structure

A strong magnetic field applied along the growth direction of a semiconductor quantum well gives rise to a spectrum of discrete energy states, the Landau levels. By combining quantum engineering of a quantum cascade structure with a static magnetic field, we can selectively inject electrons into the excited Landau level of a quantum well and realize a tunable surface emitting device based on cyclotron emission. By applying the appropriate magnetic field between 0 and 12 T, we demonstrate emission from a single device over a wide range of frequencies (1-2 THz and 3-5 THz).

preprint2006arXiv

Evidence for excitonic polarons in InAs/GaAs quantum dots

We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A strong anticrossing between two transitions is observed in all samples, which cannot be accounted for by a purely excitonic model. The coupling between the mixed exciton-LO phonon states is calculated using the Fröhlich Hamiltonian. The excitonic polaron energies as well as the oscillator strengths of the interband transitions are determined. An anticrossing is predicted when two exciton-LO phonon states have close enough energies with phonon occupations which differ by one. A good agreement is found between the calculations and the experimental data evidencing the existence of excitonic polarons.

preprint2006arXiv

Hole-LO phonon interaction in InAs/GaAs quantum dots

We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the experimental data. We calculate the coupling between the mixed hole LO-phonon states using the Fröhlich Hamiltonian, from which we determine the polaron states as well as the energies and oscillator strengths of the valence intraband transitions. The good agreement between the experiments and calculations provides strong evidence for the existence of hole-polarons and demonstrates that the intraband magneto-optical transitions occur between polaron states.