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G. V. M. Williams

G. V. M. Williams contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2013arXiv

Electron pockets and pseudogap asymmetry observed in the thermopower of underdoped cuprates

We calculate the diffusion thermoelectric power of high-Tc cuprates using the resonating-valence-bond spin-liquid model developed by Yang, Rice and Zhang (YRZ). In this model, reconstruction of the energy-momentum dispersion results in a pseudogap in the density of states that is heavily asymmetric about the Fermi level. The subsequent asymmetry in the spectral conductivity is found to account for the large magnitude and temperature dependence of the thermopower observed in underdoped cuprates. In addition we find evidence in experimental data for electron pockets in the Fermi surface, arising from a YRZ-like reconstruction, near the onset of the pseudogap in the slightly overdoped regime.

preprint2013arXiv

Large low-temperature magnetoresistance in SrFe2As2 single crystals

We present the first report on a large low-temperature magnetoresistance (MR) of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Ca ion-implanted SrFe2As2 single crystal that occurs before the emergence of crystallographic strain-induced bulk superconductivity arising from a sample aging effect. In accordance to band structure calculations from literature, which consitently show more than 2 bands are involved in the transport, we have modeled this large MR at high fields using a 3-carrier scenario rather than solely on quantum linear MR model generally used to explain the MR in iron-pnictides. At and below 20 K the large MR may be due to 3-carrier transport in an inhomogeneous state where there are superconducting and metallic regions.

preprint2012arXiv

Tc is insensitive to magnetic interactions in high-Tc superconductors

A quarter of a century after their discovery the mechanism that pairs carriers in the cuprate high-Tc superconductors (HTS) still remains uncertain. Despite this the general consensus is that it is probably magnetic in origin [1] so that the energy scale for the pairing boson is governed by J, the antiferromagnetic exchange interaction. Recent studies using resonant inelastic X-ray scattering strongly support these ideas [2]. Here as a further test we vary J (as measured by two-magnon Raman scattering) by more than 60% by changing ion sizes in the model HTS system LnA2Cu3O7-δ where A=(Ba,Sr) and Ln=(La, Nd, Sm, Eu, Gd, Dy, Yb, Lu). Such changes are often referred to as "internal" pressure. Surprisingly, we find Tcmax anticorrelates with J where internal pressure is the implicit variable. This is the opposite to the effect of external pressure and suggests that J is not the dominant energy scale governing Tcmax.

preprint2007arXiv

Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn

Ru{1-x}Sn{x}Sr2EuCu2O8 and Ru{1-x}Sn{x}Sr2GdCu2O8 have been comprehensively studied by microwave and dc resistivity and magnetoresistivity and by the dc Hall measurements. The magnetic ordering temperature T_m is considerably reduced with increasing Sn content. However, doping with Sn leads to only slight reduction of the superconducting critical temperature T_c accompanied with the increase of the upper critical field B_c2, indicating an increased disorder in the system and a reduced scattering length of the conducting holes in CuO2 layers. In spite of the increased scattering rate, the normal state resistivity and the Hall resistivity are reduced with respect to the pure compound, due to the increased number of itinerant holes in CuO2 layers, which represent the main conductivity channel. Most of the electrons in RuO2 layers are presumably localized, but the observed negative magnetoresistance and the extraordinary Hall effect lead to the conclusion that there exists a small number of itinerant electrons in RuO$_2$ layers that exhibit colossal magnetoresistance.