Source author record

G. T. Knoke

G. T. Knoke appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

1works
2topics
3close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

1 published item(s)

preprint2006arXiv

Synthesis, Structure, and Ferromagnetism of a New Oxygen Defect Pyrochlore System Lu2V2O_{7-x} (x = 0.40-0.65)

A new fcc oxygen defect pyrochlore structure system Lu2V2O_{7-x} with x = 0.40 to 0.65 was synthesized from the known fcc ferromagnetic semiconductor pyrochlore compound Lu2V2O7 which can be written as Lu2V2O6O' with two inequivalent oxygen sites O and O'. Rietveld x-ray diffraction refinements showed significant Lu-V antisite disorder for x >= 0.5. The lattice parameter versus x (including x = 0) shows a distinct maximum at x ~ 0.4. We propose that these observations can be explained if the oxygen defects are on the O' sublattice of the structure. The magnetic susceptibility versus temperature exhibits Curie-Weiss behavior above 150 K for all x, with a Curie constant C that increases with x as expected in an ionic model. However, the magnetization measurements also show that the (ferromagnetic) Weiss temperature theta and the ferromagnetic ordering temperature T_C both strongly decrease with increasing x instead of increasing as expected from C(x). The T_C decreases from 73 K for x = 0 to 21 K for x = 0.65. Furthermore, the saturation moment at a field of 5.5 T at 5 K is nearly independent of x, with the value expected for a fixed spin 1/2 per V. The latter three observations suggest that Lu2V2O_{7-x} may contain localized spin 1/2 vanadium moments in a metallic background that is induced by oxygen defect doping, instead of being a semiconductor as suggested by the C(x) dependence.