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Researcher profile

G. Pezzullo

G. Pezzullo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
hep-exphysics.ins-det

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Published work

3 published item(s)

preprint2022arXiv

A New Charged Lepton Flavor Violation Program at Fermilab

The muon has played a central role in establishing the Standard Model of particle physics, and continues to provide valuable information about the nature of new physics. A new complex at Fermilab, the Advanced Muon Facility, would provide the world's most intense positive and negative muon beams by exploiting the full potential of PIP-II and the Booster upgrade. This facility would enable a broad muon physics program, including studies of charged lepton flavor violation, muonium-antimuonium transitions, a storage ring muon EDM experiment, and muon spin rotation experiments. This document describes a staged realization of this complex, together with a series of next-generation experiments to search for charged lepton flavor violation.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Mu2e-II: Muon to electron conversion with PIP-II

An observation of Charged Lepton Flavor Violation (CLFV) would be unambiguous evidence for physics beyond the Standard Model. The Mu2e and COMET experiments, under construction, are designed to push the sensitivity to CLFV in the mu to e conversion process to unprecedented levels. Whether conversion is observed or not, there is a strong case to be made for further improving sensitivity, or for examining the process on additional target materials. Mu2e-II is a proposed upgrade to Mu2e, with at least an additional order of magnitude in sensitivity to the conversion rate over Mu2e. The approach and challenges for this proposal are summarized. Mu2e-II may be regarded as the next logical step in a continued high-intensity muon program at FNAL.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

An induced annealing technique for SiPMs neutron radiation damage

The use of Silicon Photo-Multipliers(SiPMs)has become popular in the design of High Energy Physics experimental apparatus with a growing interest for their application in detector area where a significant amount of non-ionising dose is delivered. For these devices, the main effect caused by the neutron fluence is a linear increase of the leakage current. In this paper, we present a technique that provides a partial recovery of the neutron damage on SiPMs by means of an Electrical Induced Annealing. Tests were performed, at the temperature of 20C, on a sample of three SiPM arrays (2x3) of 6 mm^2 cells with 50 um pixel sizes: two from Hamamatsu and one from SensL. These SiPMs have been exposed to neutrons generated by the Elbe Positron Source facility (Dresden), up to a total fluence of 8x10^11 n1MeV-eq/cm^2. Our techniques allowed to reduced the leakage current of a factor ranging between 15-20 depending on the overbias used and the SiPM vendor. Because, during the process the SiPM current can reach O(100 mA), the sensors need to be operated in a condition that provides thermal dissipation. Indeed, caution must be used when applying this kind of procedures on the SiPMs, because it may damage permanently the device itself.

0 citations0 reviewsNo code linkedOpen access