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G. H. Ding

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Published work

3 published item(s)

preprint2014arXiv

Time-dependent quantum transport through an interacting quantum dot beyond sequential tunneling: second-order quantum rate equations

A general theoretical formulation for the effect of a strong on-site Coulomb interaction on the time-dependent electron transport through a quantum dot under the influence of arbitrary time-varying bias voltages and/or external fields is presented, based on slave bosons and the Keldysh nonequilibrium Green's function (GF) techniques. To avoid the difficulties of computing double-time GFs, we generalize the propagation scheme recently developed by Croy and Saalmann to combine the auxiliary-mode expansion with the celebrated Lacroix's decoupling approximation in dealing with the second-order correlated GFs and then establish a closed set of coupled equations of motion, called second-order quantum rate equations (SOQREs), for exact description of transient dynamics of electron correlated tunneling. We verify that the stationary solution of our SOQREs is able to correctly describe the Kondo effect on a qualitative level. Moreover, a comparison with other methods, such as the second-order von Neumann approach and Hubbard-I approximation, is performed. As illustrations, we investigate the transient current behaviors in response to a step voltage pulse and a harmonic driving voltage, and linear admittance as well, in the cotunneling regime.

preprint2013arXiv

Full counting statistics of a single-molecular quantum dot

We investigate the full counting statistics of a single quantum dot strongly coupled to a local phonon and weakly tunnel-connected to two metallic electrodes. By employing the generalized nonequilibrium Green function method and the Lang-Firsov transformation, we derive an explicit analytical formula for the cumulant generating function, which makes one to be able to identify distinctly the elastic and inelastic contributions to the current and zero-frequency shot noise. We find that at zero temperature, the inelastic effect causes upward steps in the current and downward jumps in the noise at the bias voltages corresponding to the opening of the inelastic channels, which are ascribed to the vibration-induced complex dependences of electronic self-energies on the energy and bias voltage. More interestingly, the Fano factor exhibits oscillatory behavior with increasing bias voltage and its minimum value is observed to be smaller than one half.

preprint2011arXiv

Full counting statistics of Kondo-type tunneling in a quantum dot: the fluctuation effect of Slave-Boson field

We study the full counting statistics (FCS) of electron tunneling through a multi-terminal quantum dot in the Kondo regime within the slave-boson mean field theory. By employing the A.O. Gogolin and A. Komnik's method of calculating the FCS generating function based on the nonequilibrium Green's function [Phys. Rev. B {\bf 73}, 195301 (2006)], we obtain the counting field $λ$-dependent self-consistent equations for the mean values of the slave-boson fields and the explicit expression for the derivative of the adiabatic potential of the system with respect to the counting fields. Performing perturbative expansion to the first order of $λ$, we find an extra contribution to the shot noise due to the bias-induced Bose field fluctuation, and then confirm that the nonequilibrium particle number fluctuation plays an important role in the current noise of the Kondo dot: enhancement of the current auto-correlation and a positive current cross-correlation.