Researcher profile

G. Eda

G. Eda contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2016arXiv

Characterization of the second- and third-order nonlinear optical susceptibilities of monolayer MoS$_2$ using multiphoton microscopy

We report second- and third-harmonic generation in monolayer MoS$_\mathrm{2}$ as a tool for imaging and accurately characterizing the material's nonlinear optical properties under 1560 nm excitation. Using a surface nonlinear optics treatment, we derive expressions relating experimental measurements to second- and third-order nonlinear sheet susceptibility magnitudes, obtaining values of $|χ_s^{(2)}|=2.0\times10^{-20}$ m$^2$ V$^{-1}$ and for the first time for monolayer MoS$_\mathrm{2}$, $|χ_s^{(3)}|=1.7\times10^{-28}$ m$^3$ V$^{-2}$. These sheet susceptibilities correspond to effective bulk nonlinear susceptibility values of $|χ_{b}^{(2)}|=2.9\times10^{-11}$ m V$^{-1}$ and $|χ_{b}^{(3)}|=2.4\times10^{-19}$ m$^2$ V$^{-2}$, accounting for the sheet thickness. Experimental comparisons between MoS$_\mathrm{2}$ and graphene are also performed, demonstrating $\sim$3.4 times stronger third-order sheet nonlinearity in monolayer MoS$_\mathrm{2}$, highlighting the material's potential for nonlinear photonics in the telecommunications C band.

preprint2015arXiv

Quantum transport and observation of Dyakonov-Perel spin-orbit scattering in monolayer MoS$_2$

Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudo-spin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observation of a crossover from weak localization to weak anti-localization in highly n-doped monolayer MoS2. We show that the crossover can be explained by a single parameter associated with electron spin lifetime of the system. We find that the spin lifetime is inversely proportional to momentum relaxation time, indicating that spin relaxation occurs via Dyakonov-Perel mechanism.

preprint2014arXiv

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.

preprint2014arXiv

Electronic transport in graphene-based heterostructures

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this letter, we study the surface morphology of 2D BN, gallium selenide (GaSe) and transition metal dichalcogenides (tungsten disulfide (WS2) and molybdenum disulfide (MoS2)) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis show that these crystals have improved surface roughness (root mean square (rms) value of only ~ 0.1 nm) compared to conventional SiO2 substrate. While our results confirm that graphene devices exhibit very high electronic mobility on BN substrates, graphene devices on WS2 substrates (G/WS2) are equally promising for high quality electronic transport (~ 38,000 cm2/Vs at RT), followed by G/MoS2 (~ 10,000 cm2/Vs) and G/GaSe (~ 2,200 cm2/Vs). However, we observe a significant asymmetry in electron and hole conduction in G/WS2 and G/MoS2 heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.