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Researcher profile

G. Di Battista

G. Di Battista contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conquant-ph

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Published work

2 published item(s)

preprint2022arXiv

Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene

We report on observation of the infrared photoresistance of twisted bilayer graphene under continuous quantum cascade laser illumination at a frequency of 57.1 THz. The photoresistance shows an intricate sign-alternating behavior under variations of temperature and back gate voltage, and exhibits giant resonance-like enhancements at certain gate voltages. The structure of the photoresponse correlates with weaker features in the dark dc resistance reflecting the complex band structure of twisted bilayer graphene. It is shown that the observed photoresistance is well captured by a bolometric model describing the electron and hole gas heating, which implies an ultrafast thermalization of the photoexcited electron-hole pairs in the whole range of studied temperatures and back gate voltages. We establish that photoresistance can serve a highly sensitive probe of the temperature variations of electronic transport in twisted bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Revealing the ultra-sensitive calorimetric properties of supercon-ducting magic-angle twisted bilayer graphene

The allegedly unconventional superconducting phase of magic-angle twisted bilayer graphene (MATBG)1 has been predicted to possess extraordinary thermal properties, as it is formed from a highly diluted electron ensemble with both a record-low carrier density n ~ 10^11 cm-2 and electronic heat capacity Ce < 100 kB. While these attributes position MATBG as a ground-breaking material platform for revolutionary calorimetric applications2, these properties have so far not been experimentally shown. Here we reveal the ultra-sensitive calorimetric properties of a superconducting MATBG device, by monitoring its temperature dependent critical current Ic under continuous laser heating with a wavelength of 1550nm. From the bolometric effect, we are able to extract the temperature dependence of the electronic thermal conductance Gth, which remarkably has a non-zero value Gth = 0.19 pW/K at 35mK and in the low temperature limit is consistent with a power law dependence, as expected for nodal superconductors. Photo-voltage measurements on this non-optimized device reveal a peak responsivity of S = 5.8 x 10^7 V/W when the device is biased close to Ic, with a noise-equivalent power of NEP = 5.5 x 10^-16 WHz^-1/2. Analysis of the intrinsic perfor-mance shows that a theoretically achievable limit is defined by thermal fluctuations and can be as low as NEPTEF < 10^-20 WHz-1/2, with operation speeds as fast as ~ 500 ns. This establishes superconducting MATBG as a revolutionizing active material for ultra-sensitive photon-detection applications, which could enable currently unavailable technologies such as THz photon-number-resolving single-photon-detectors.

0 citations0 reviewsNo code linkedOpen access