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D. K. Efetov

D. K. Efetov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.supr-concond-mat.mtrl-sciquant-ph

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Published work

5 published item(s)

preprint2022arXiv

Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene

We report on observation of the infrared photoresistance of twisted bilayer graphene under continuous quantum cascade laser illumination at a frequency of 57.1 THz. The photoresistance shows an intricate sign-alternating behavior under variations of temperature and back gate voltage, and exhibits giant resonance-like enhancements at certain gate voltages. The structure of the photoresponse correlates with weaker features in the dark dc resistance reflecting the complex band structure of twisted bilayer graphene. It is shown that the observed photoresistance is well captured by a bolometric model describing the electron and hole gas heating, which implies an ultrafast thermalization of the photoexcited electron-hole pairs in the whole range of studied temperatures and back gate voltages. We establish that photoresistance can serve a highly sensitive probe of the temperature variations of electronic transport in twisted bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Revealing the ultra-sensitive calorimetric properties of supercon-ducting magic-angle twisted bilayer graphene

The allegedly unconventional superconducting phase of magic-angle twisted bilayer graphene (MATBG)1 has been predicted to possess extraordinary thermal properties, as it is formed from a highly diluted electron ensemble with both a record-low carrier density n ~ 10^11 cm-2 and electronic heat capacity Ce < 100 kB. While these attributes position MATBG as a ground-breaking material platform for revolutionary calorimetric applications2, these properties have so far not been experimentally shown. Here we reveal the ultra-sensitive calorimetric properties of a superconducting MATBG device, by monitoring its temperature dependent critical current Ic under continuous laser heating with a wavelength of 1550nm. From the bolometric effect, we are able to extract the temperature dependence of the electronic thermal conductance Gth, which remarkably has a non-zero value Gth = 0.19 pW/K at 35mK and in the low temperature limit is consistent with a power law dependence, as expected for nodal superconductors. Photo-voltage measurements on this non-optimized device reveal a peak responsivity of S = 5.8 x 10^7 V/W when the device is biased close to Ic, with a noise-equivalent power of NEP = 5.5 x 10^-16 WHz^-1/2. Analysis of the intrinsic perfor-mance shows that a theoretically achievable limit is defined by thermal fluctuations and can be as low as NEPTEF < 10^-20 WHz-1/2, with operation speeds as fast as ~ 500 ns. This establishes superconducting MATBG as a revolutionizing active material for ultra-sensitive photon-detection applications, which could enable currently unavailable technologies such as THz photon-number-resolving single-photon-detectors.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magic-angle bilayer graphene nano-calorimeters -- towards broadband, energy-resolving single photon detection

Because of the ultra-low photon energies in the mid-infrared and terahertz frequencies, in these bands photodetectors are notoriously underdeveloped, and broadband single photon detectors (SPDs) are non-existent. Advanced SPDs exploit thermal effects in nano-structured superconductors, and their performance is currently limited to the more energetic near-infrared photons due to their high electronic heat capacity. Here, we demonstrate a superconducting magic-angle twisted bilayer graphene (MAG) device that is capable of detecting single photons of ultra-low energies by utilizing its record-low heat capacity and sharp superconducting transition. We theoretically quantify its calorimetric photoresponse and estimate its detection limits. This device allows the detection of ultra-broad range single photons from the visible to sub-THz with response time around 4 ns and energy resolution better than 1 THz. These attributes position MAG as an excep-tional material for long-wavelength single photon sensing, which could revolutionize such disparate fields as quantum information processing and radio astronomy.

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preprint2015arXiv

Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$

Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr$_{2}$IrO$_{4}$ (SIO) were investigated under the action of ionic liquid gating. Despite large carrier density modulation, the temperature dependent resistance measurements exhibit insulating behavior in chemically and EFE doped samples with the band filling up to 10\%. The ambipolar transport across the Mott gap is demonstrated by EFE tuning of the activation energy. Further, we observe a crossover from a negative magnetoresistance (MR) at high temperatures to positive MR at low temperatures. The crossover temperature was around $\sim$80-90 K, irrespective of the filling. This temperature and magnetic field dependent crossover is qualitatively associated with a change in the conduction mechanism from Mott to Coulomb gap mediated variable range hopping (VRH). This explains the origin of robust insulating ground state of SIO in electrical transport studies and highlights the importance of disorder and Coulombic interaction on electrical properties of SIO.

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preprint2015arXiv

Specular Interband Andreev Reflections in Graphene

Electrons incident from a normal metal onto a superconductor are reflected back as holes - a process called Andreev reflection. In a normal metal where the Fermi energy is much larger than a typical superconducting gap, the reflected hole retraces the path taken by the incident electron. In graphene with ultra low disorder, however, the Fermi energy can be tuned to be smaller than the superconducting gap. In this unusual limit, the holes are expected to be reflected specularly at the superconductor-graphene interface due to the onset of interband Andreev processes, where the effective mass of the reflected holes change sign. Here we present measurements of gate modulated Andreev reflections across the low disorder van der Waals interface formed between graphene and the superconducting NbSe2. We find that the conductance across the graphene-superconductor interface exhibits a characteristic suppression when the Fermi energy is tuned to values smaller than the superconducting gap, a hallmark for the transition between intraband retro- and interband specular- Andreev reflections.

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