Source author record

G. D. Dwivedi

G. D. Dwivedi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2019arXiv

Probing the Griffiths like phase, unconventional dual glassy states, giant exchange bias effects and its correlation with its electronic structure in Pr2-xSrxCoMnO6

Electronic structure, electrical transport, dc and ac magnetization properties of the hole substituted (Sr2+) partially B-site disordered double perovskite Pr2-xSrxCoMnO6 system have been investigated. Electronic structure was probed by employing X-ray photoemission spectroscopy (XPS) measurements. The study suggested the presence of mixed valence states of the B-site ions (Co2+/Co3+ and Mn3+/Mn4+) with significant enhancement of the average oxidation states due to hole doping. The mere absence of electronic states near the Fermi level in the valence band (VB) spectra for both of the pure (x=0.0) and Sr doped (x=0.5) systems indicated the insulating nature of the samples. Sr substitution is observed to increase the spectral weight near the Fermi level suggesting for an enhanced conductivity of the hole doped system. The temperature variation of electrical resistivity measurements revealed the insulating nature for both the systems, thus supporting the VB spectra results. The dc magnetization data divulged a Griffiths like phase above the long range ordering temperature. A typical re-entrant spin glass like phase driven by the inherent anti-site disorder (ASD) has been maidenly recognized by ac susceptibility study for both the pure and doped systems. Most interestingly, the emergence of a new cluster glass like phase (immediately below the magnetic ordering temperature and above the spin-glass transition temperature) solely driven by the Sr substitution has been unravelled by ac magnetization dynamics study. The isothermal magnetization measurements further probed the exhibition of the giant exchange bias effect emanated from the existence of multiple magnetic phases.

preprint2015arXiv

Mechanism responsible for initiating room temperature ferromagnetism and spin polarized current in diluted magnetic oxides

The main obstacles in realizing diluted magnetic oxide (DMO) in spintronics are the unknown electronic structures associated with its high TC ferromagnetism and spin polarized current and how to manipulate desired electronic structures by fabrication techniques. We demonstrate that fine-tuned electronic structures and band structures can be modified to initiate DMO properties. Interestingly, in the semiconducting state, the doped Co ions and oxygen vacancies contribute non-negligible magnetic moments; and the magnetic coupling between these moments is mediated by the localized carriers via highly spin polarized hopping transport. These results unravel the myth of the origin of spintronic characteristics with desirable electronic states; thereby reopening the door for future applications.

preprint2015arXiv

Origin and Enhancement of Spin Polarization Current in Diluted Magnetic Oxides by Oxygen Vacancies and Nano Grain Size

Spin polarized current is the main ingredient of diluted magnetic oxides due to its potential manipulation in spintronic devices. However, most research has focused on ferromagnetic properties rather than polarization of electric current, because direct measurements were difficult and the origin of spin polarized currents has yet to be fully understood. The method to increase the spin polarized current percentage is beyond practical consideration at the present status. To target this problem, we focus on the role of oxygen vacancies and nano grain size on the spin polarized current, which are controlled by growing the Co-doped ZnO thin-films at room temperature in a reducing atmosphere [Ar + (1% ~ 30%) H2]. We found that the conductivity increases with an increase in oxygen vacancies via two independent channels: the variable range hopping (VRH) within localized states and the itinerant transport in the conduction band. The Andreev Reflection measurements prove that the VRH conduction is equivalent to spin polarized current. Transport measurements show that the best way to increase the VRH content, or the percentage of spin polarized current, is to increase oxygen vacancy concentration and to reduce grain size and lattice constants of the films.