Mechanism responsible for initiating room temperature ferromagnetism and spin polarized current in diluted magnetic oxides
The main obstacles in realizing diluted magnetic oxide (DMO) in spintronics are the unknown electronic structures associated with its high TC ferromagnetism and spin polarized current and how to manipulate desired electronic structures by fabrication techniques. We demonstrate that fine-tuned electronic structures and band structures can be modified to initiate DMO properties. Interestingly, in the semiconducting state, the doped Co ions and oxygen vacancies contribute non-negligible magnetic moments; and the magnetic coupling between these moments is mediated by the localized carriers via highly spin polarized hopping transport. These results unravel the myth of the origin of spintronic characteristics with desirable electronic states; thereby reopening the door for future applications.