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G. Bridoux

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2015arXiv

Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers

We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited directly onto SiO2 and exposed with identical dose. We attribute the difference to a more efficient carbon deposition in the former case due to an increase in the presence of compounds containing carbon, which are released by the PMMA. The amorphous carbon interface can sustain very large current densities without degrading, which leads to very large spin accumulations exceeding 500 microeVs at room temperature.

preprint2012arXiv

Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO $_3$ bilayer

We have investigated exchange bias effects in bilayers composed by the antiferromagnetic o-YMnO $_3$ and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Hall effect. The magnetization and magnetotransport properties show pronounced asymmetries in the field and magnetization axes of the field hysteresis loops. Both exchange bias parameters, the exchange bias field $H_{E}(T)$ as well as the magnetization shift $M_E(T)$ , vanish around the Néel temperature $T_N \simeq 45$ K. We show that the magnetization shift $M_E(T)$ is also measured by a shift in the anisotropic magnetoresistance and planar Hall resistance having those a similar temperature dependence as the one obtained from magnetization measurements. Because the o-YMnO $_3$ film is highly insulating, our results demonstrate that the $M_E(T)$ shift originates at the interface within the ferromagnetic Co layer. To show that the main results obtained are general and not because of some special characteristics of the o-YMO $_3$ layer, similar measurements were done in Co/CoO micro-wires. The transport and magnetization characterization of the micro-wires supports the main conclusion that these effects are related to the response of the ferromagnetic Co layer at the interface.

preprint2010arXiv

The influence of Ga $^+$ -irradiation on the transport properties of mesoscopic conducting thin films

We studied the influence of 30keV Ga $^+$ -ions -- commonly used in focused ion beam (FIB) devices -- on the transport properties of thin crystalline graphite flake, La $_{0.7}$ Ca $_{0.3}$ MnO $_3$ and Co thin films. The changes of the electrical resistance were measured in-situ during irradiation and also the temperature and magnetic field dependence before and after irradiation. Our results show that the transport properties of these materials strongly change at Ga $^+$ fluences much below those used for patterning and ion beam induced deposition (IBID), limiting seriously the use of FIB when the intrinsic properties of the materials of interest are of importance. We present a method that can be used to protect the sample as well as to produce selectively irradiation-induced changes.

preprint2010arXiv

Uncompensated magnetization and exchange-bias field in La $_{0.7}$ Sr $_{0.3}$ MnO $_3$ /YMnO $_3$ bilayers: The influence of the ferromagnetic layer

We studied the magnetic behavior of bilayers of multiferroic and nominally antiferromagnetic o-YMnO $_3$ (375~nm thick) and ferromagnetic La $_{0.7}$ Sr $_{0.3}$ MnO $_3$ and La $_{0.67}$ Ca $_{0.33}$ MnO $_3$ ( $8 \ldots 225~$ nm), in particular the vertical magnetization shift $M_E$ and exchange bias field $H_E$ for different thickness and magnetic dilution of the ferromagnetic layer at different temperatures and cooling fields. We have found very large $M_E$ shifts equivalent to up to 100\% of the saturation value of the o-YMO layer alone. The overall behavior indicates that the properties of the ferromagnetic layer contribute substantially to the $M_E$ shift and that this does not correlate straightforwardly with the measured exchange bias field $H_E$ .

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G. Bridoux

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4 publications

Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers

Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO $_3$ bilayer

The influence of Ga $^+$ -irradiation on the transport properties of mesoscopic conducting thin films

Uncompensated magnetization and exchange-bias field in La $_{0.7}$ Sr $_{0.3}$ MnO $_3$ /YMnO $_3$ bilayers: The influence of the ferromagnetic layer

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G. Bridoux

Research overview

Is this your work?

4 publications

Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers

Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO3_33​ bilayer

The influence of Ga+^++-irradiation on the transport properties of mesoscopic conducting thin films

Uncompensated magnetization and exchange-bias field in La0.7_{0.7}0.7​Sr0.3_{0.3}0.3​MnO3_33​/YMnO3_33​ bilayers: The influence of the ferromagnetic layer

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Building this map preview

Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO $_3$ bilayer

The influence of Ga $^+$ -irradiation on the transport properties of mesoscopic conducting thin films

Uncompensated magnetization and exchange-bias field in La $_{0.7}$ Sr $_{0.3}$ MnO $_3$ /YMnO $_3$ bilayers: The influence of the ferromagnetic layer