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G. Acbas

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3 publications

preprint2009arXiv

Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy

We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. The infrared magneto-optical effects we study arise directly from the spin-splitting of the carrier bands and their chiral asymmetry due to spin-orbit coupling. Unlike the unpolarized absorption, they are intimately related to ferromagnetism and their interpretation is much more microscopically constrained in terms of the orbital character of the relevant band states. We show that the conventional theory of the disordered valence band with dominant As p-orbital character and coupled by kinetic-exchange to Mn local moments accounts semi-quantitatively for the overall characteristics of the measured infrared magneto-optical spectra.

preprint2009arXiv

Infrared anomalous Hall effect in SrRuO3_3: Evidence for crossover to intrinsic behavior

The origin of the Hall effect in many itinerant ferromagnets is still not resolved, with an anomalous contribution from the sample magnetization that can exhibit extrinsic or intrinsic behavior. We report the first mid-infared (MIR) measurements of the complex Hall (θHθ_H), Faraday (θFθ_F), and Kerr (θKθ_K) angles, as well as the Hall conductivity (σxyσ_{xy}) in a SrRuO3_3 film in the 115-1400 meV energy range. The magnetic field, temperature, and frequency dependence of the Hall effect is explored. The MIR magneto-optical response shows very strong frequency dependence, including sign changes. Below 200 meV, the MIR θH(T)θ_H (T) changes sign between 120 and 150 K, as is observed in dc Hall measurements. Above 200 meV, the temperature dependence of θHθ_H is similar to that of the dc magnetization and the measurements are in good agreement with predictions from a band calculation for the intrinsic anomalous Hall effect (AHE). The temperature and frequency dependence of the measured Hall effect suggests that whereas the behavior above 200 meV is consistent with an intrinsic AHE, the extrinsic AHE plays an important role in the lower energy response.

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