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Freddie Hendriks

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Published work

3 published item(s)

preprint2024arXiv

Electrostatic Control of Magneto-Optic Excitonic Resonances in the van der Waals Ferromagnetic Semiconductor Cr$_2$Ge$_2$Te$_6$

Two-dimensional magnetic materials exhibit strong magneto-optic effects and high tunability by electrostatic gating, making them very attractive for new magneto-photonic devices. Here, we characterize the magneto-optic Kerr effect (MOKE) spectrum of thin Cr$_2$Ge$_2$Te$_6$ from 1.13 to 2.67 eV, and demonstrate electrostatic control over of its magnetic and magneto-optic properties. The MOKE spectrum exhibits a strong feature around 1.43 eV which we attribute to a magnetic exchange-split excitonic state in Cr$_2$Ge$_2$Te$_6$, in agreement with \textit{ab-initio} calculations. The gate dependence of the MOKE signals shows that the magneto-optical efficiency - rather than the saturation magnetization - is affected by electrostatic gating. We demonstrate a modulation of the magneto-optical strength by over 1 mdeg, with some wavelengths showing a modulation of 65% of the total magneto-optical signals, opening the door for efficient electrical control over light polarization through two-dimensional magnets. Our findings bring forward the fundamental understanding of magneto-optic processes in two-dimensional magnets and are highly relevant for the engineering of devices which exploit excitonic resonances for electrically-tunable magneto-photonic devices.

preprint2021arXiv

Symmetry and Control of Spin-Scattering Processes in Two-Dimensional Transition Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto-spintronic devices. These promising properties emerge due to their large spin-orbit coupling in combination with their crystal symmetries. Here, we provide simple symmetry arguments in a group-theory approach to unveil the symmetry-allowed spin scattering mechanisms, and indicate how one can use these concepts towards an external control of the spin lifetime. We perform this analysis for both monolayer (inversion asymmetric) and bilayer (inversion symmetric) crystals, indicating the different mechanisms that play a role in these systems. We show that, in monolayer TMDs, electrons and holes transform fundamentally differently -- leading to distinct spin-scattering processes. We find that one of the electronic states in the conduction band is partially protected by time-reversal symmetry, indicating a longer spin lifetime for that state. In bilayer and bulk TMDs, a hidden spin-polarization can exist within each layer despite the presence of global inversion symmetry. We show that this feature enables control of the interlayer spin-flipping scattering processes via an out-of-plane electric field, providing a mechanism for electrical control of the spin lifetime.

preprint2019arXiv

Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC

Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spin-lattice and spin-spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime $T_1$ of $2,4$ s at $2$ K.