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Flemming Jensen

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2 published item(s)

preprint2015arXiv

Experimental Demonstration of Effective Medium Approximation Breakdown in Deeply Subwavelength All-Dielectric Multilayers

We experimentally demonstrate the effect of anomalous breakdown of the effective medium approximation in all-dielectric deeply subwavelength thickness ($d \simλ/160-λ/30$) multilayers, as recently predicted theoretically [H.H. Sheinfux et al., Phys. Rev. Lett. 113, 243901 (2014)]. Multilayer stacks are composed of alternating alumina and titania layers fabricated using atomic layer deposition. For light incident on such multilayers at angles near the total internal reflection we observe pronounced differences in the reflectance spectra for structures with 10-nm versus 20-nm thick layers, as well as for structures with different layers ordering, contrary to the predictions of the effective medium approximation. The reflectance difference can reach values up to 0.5, owing to the chosen geometrical configuration with an additional resonator layer employed for the enhancement of the effect. Our results are important for the development of new high-precision multilayer ellipsometry methods and schemes, as well as in a broad range of sensing applications.

preprint2015arXiv

Full-field hard x-ray microscopy with interdigitated silicon lenses

Full-field x-ray microscopy using x-ray objectives has become a mainstay of the biological and materials sciences. However, the inefficiency of existing objectives at x-ray energies above 15 keV has limited the technique to weakly absorbing or two-dimensional (2D) samples. Here, we show that significant gains in numerical aperture and spatial resolution may be possible at hard x-ray energies by using silicon-based optics comprising 'interdigitated' refractive silicon lenslets that alternate their focus between the horizontal and vertical directions. By capitalizing on the nano-manufacturing processes available to silicon, we show that it is possible to overcome the inherent inefficiencies of silicon-based optics and interdigitated geometries. As a proof-of-concept of Si-based interdigitated objectives, we demonstrate a prototype interdigitated lens with a resolution of ~255 nm at 17 keV.